Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.Comment: RevTex, 4 pages, 4 figures, minor correction

Unipolar transport and shot noise in metal-semiconductor-metal structures

We carry out a self-consistent analytical theory of unipolar current and noise properties of metal-semiconductor-metal structures made of highly resistive semiconductors in the presence of an applied bias of arbitrary strength. By including the effects of the diffusion current we succeed to study the whole range of carrier injection conditions going from low level injection, where the structure behaves as a linear resistor, to high level injection, where the structure behaves as a space charge limited diode. We show that these structures display shot noise at the highest voltages. Remarkably the crossover from Nyquist noise to shot noise exhibits a complicate behavior with increasing current where an initial square root dependence (double thermal noise) is followed by a cubic power law.Comment: 10 pages, 8 figures. Accepted for publication in Journal of Applied Physics (Scheduled 1 January 2003

Amplification by stochastic interference

A new method is introduced to obtain a strong signal by the interference of weak signals in noisy channels. The method is based on the interference of 1/f noise from parallel channels. One realization of stochastic interference is the auditory nervous system. Stochastic interference may have broad potential applications in the information transmission by parallel noisy channels

Long-range potential fluctuations and 1/f noise in hydrogenated amorphous silicon

We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential produced by deep defects, thereby predicting the absolute noise intensity as a function of the distribution of defect activation energies. The predictions of this theory are in very good agreement with our own experiments in terms of both the absolute intensity and the temperature dependence of the noise spectra.Comment: 8 pages, 3 figures, several new parts and one new figure are added, but no conceptual revision

Noise suppression by noise

We have analyzed the interplay between an externally added noise and the intrinsic noise of systems that relax fast towards a stationary state, and found that increasing the intensity of the external noise can reduce the total noise of the system. We have established a general criterion for the appearance of this phenomenon and discussed two examples in detail.Comment: 4 pages, 4 figure

Shot noise suppression in multimode ballistic Fermi conductors

We have derived a general formula describing current noise in multimode ballistic channels connecting source and drain electrodes with Fermi electron gas. In particular (at $eV\gg k_{B}T$), the expression describes the nonequilibrium ''shot'' noise, which may be suppressed by both Fermi correlations and space charge screening. The general formula has been applied to an approximate model of a 2D nanoscale, ballistic MOSFET. At large negative gate voltages, when the density of electrons in the channel is small, shot noise spectral density $S_{I}(0)$ approaches the Schottky value $2eI$, where $I$ is the average current. However, at positive gate voltages, when the maximum potential energy in the channel is below the Fermi level of the electron source, the noise can be at least an order of magnitude smaller than the Schottky value, mostly due to Fermi effects.Comment: 4 page

Stochastic Resonance in Noisy Non-Dynamical Systems

We have analyzed the effects of the addition of external noise to non-dynamical systems displaying intrinsic noise, and established general conditions under which stochastic resonance appears. The criterion we have found may be applied to a wide class of non-dynamical systems, covering situations of different nature. Some particular examples are discussed in detail.Comment: 4 pages, RevTex, 3 PostScript figures available upon reques