Differential Enzymatic Activity of Rat ADAR2 Splicing Variants Is Due to Altered Capability to Interact with RNA in the Deaminase Domain

In mammals, adenosine (A) to inosine (I) RNA editing is performed by adenosine deaminases acting on RNA (ADAR), ADAR1 and ADAR2 enzymes, encoded by mRNAs that might undergo splicing process. In rat, two splicing events produce several isoforms of ADAR2, called ADAR2a, ADAR2b, ADAR2e, and ADAR2f, but only ADAR2a and ADAR2b are translated into an active protein. In particular, they differ for ten amino acids located in the catalytic domain of ADAR2b. Here, we focused on these two isoforms, analyzing the splicing pattern and their different function during rat neuronal maturation. We found an increase of editing levels in cortical neurons overexpressing ADAR2a compared to those overexpressing ADAR2b. These results indicate ADAR2a isoform as the most active one, as reported for the homologous human short variant. Furthermore, we showed that the differential editing activity is not due to a different dimerization of the two isoforms; it seems to be linked to the ten amino acids loop of ADAR2b that might interfere with RNA binding, occupying the space volume in which the RNA should be present in case of binding. These data might shed light on the complexity of ADAR2 regulations

Light Ions Response of Silicon Carbide Detectors

Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18 MeV were used. The diode active-region depletion-thickness, the linearity of the response, energy resolution and signal rise-time were measured for different values of the applied reverse bias. Moreover the radiation damage on SiC diodes irradiated with 53 MeV 16O beam has been explored. The data show that SiC material is radiation harder than silicon but at least one order of magnitude less hard than epitaxial silicon diodes. An inversion in the signal was found at a fluence of 10^15 ions/cm^2.Comment: 20 pages, 16 figures, submitted for publication to Nuclear Instruments and Methods in Physics Research

Structural and electronic characterization of (2,3(3)) bar-shaped stacking fault in 4H-SiC epitaxial layers

Crystallographic, electronic, and energetic analyses of the (2, 3_3) [or (2, 3, 3, 3) in the standard Zhadanov notation] bar-shaped stacking fault, observed in as-grown 4H-SiC epitaxial layers, are presented. The defect has been identified by means of spatially resolved microphotoluminescence (μ-PL) measurements at different emission wavelengths, focusing on the emission peak at 0.3 eV below the conduction band. Low temperature μ-PL measurements have also been performed. The defect has been identified and characterized using high resolution transmission electron microscopy. Experimental results are correlated and validated by the calculations of the Kohn–Sham electronic band structure and the defect formation energy

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates. We discuss the use of dichlorosilane as the Si-precursor for 4H-SiC epitaxial growth as it provides the most direct decomposition route into SiCl2, which is the predominant growth species in chlorinated chemistries. A specular surface morphology was attained by limiting the hydrogen etch rate until the system was equilibrated at the desired growth temperature. The RMS roughness of the grown films ranged from 0.5-2.0 nm with very few morphological defects (carrots, triangular defects, etc.) being introduced, while enabling growth rates of 30-100 \mum/hr, 5-15 times higher than most conventional growths. Site-competition epitaxy was observed over a wide range of C/Si ratios, with doping concentrations < 1x1014 cm-3 being recorded. X-ray rocking curves indicated that the epilayers were of high crystallinity, with linewidths as narrow as 7.8 arcsec being observed, while microwave photoconductive decay (\muPCD) measurements indicated that these films had high injection (ambipolar) carrier lifetimes in the range of 2 \mus