Hydroxyapatite deposition study through polymeric process on commercially pure Ti surfaces modified by laser beam irradiation

Many techniques have been used to coat metallic substrate with bioceramics. The aim of this study was to study the physical-chemical characteristics of polyvinylidene fluoride (alpha-PVDF)/hydroxyapatite (HA) composite coating, obtained by casting method, on commercially pure titanium (alpha-CP Ti) substrate surface modified by laser beam irradiation. The preparation of coating was done for mixing alpha-PVDF pellets shape dissolved in dimethylacetamide (DMA) with HA/DMA emulsion. The mixture was poured onto the alpha-CP Ti sample and left to dry in an oven. CP Ti plates were coated with alpha-PVDF/HA composite film, in proportions of 100/00 and 60/40 in weight, and characterized by particle size analysis, scanning electron microscopy, energy dispersive spectroscopy (EDS), X-ray diffractometry, thickness measurement and contact angle. Uniform coating with a small thickness variation along the coated surface was successfully obtained.Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES

Synthesis and evaluation of a PVDF-PT3MA-Zn2SiO4:Mn hybrid polymeric composite for optical device applications

A new hybrid organic/inorganic composite consisting of poly(3-thiophene methyl acetate) (PT3MA), poly(vinylidene fluoride) (PVDF) and manganese-doped zinc silicate (Zn2SiO4:Mn) has been synthesized and applied for the fabrication of an optical device. Recrystallized PVDF was used as a host matrix for the PT3MA polymer and Zn2SiO4:Mn inorganic compound. The active layer was deposited on an indium-tin-oxide (ITO)-coated glass substrate by the drop casting technique. A spin-coating method was also used for morphological comparison purposes. The synthesized material as well as the device (aluminium electrodes/PVDF-PT3MA-Zn2SiO4:Mn/ITO/glass) was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), dark current-voltage (I-V) characteristic curves, absorbance and photoluminescence (PL) spectroscopy. The results show spherical-and irregular-shaped microparticles both dispersed on and within the PVDF matrix, which correspond to PT3MA and Zn2SiO4:Mn, respectively. The hybrid composite shows strong luminescence at approximate to 525 nm superimposed by a broadband between 600 and 800 nm, originating from the Zn2SiO4:Mn radiative transitions and from the recombination of photogenerated carriers at PT3MA. At room temperature, the device presented semiconductor behaviour typically observed for photodetectors and a DC electrical conductivity of approximate to 0.37 mu S cm(-1).Peer Reviewe

Extracting and Visualizing Uncertainties in Segmentations from 3D Medical Data

A new hybrid organic/inorganic composite consisting of poly(3-thiophene methyl acetate) (PT3MA), poly(vinylidene fluoride) (PVDF) and manganese-doped zinc silicate (Zn2SiO4:Mn) has been synthesized and applied for the fabrication of an optical device. Recrystallized PVDF was used as a host matrix for the PT3MA polymer and Zn2SiO4:Mn inorganic compound. The active layer was deposited on an indium-tin-oxide (ITO)-coated glass substrate by the drop casting technique. A spin-coating method was also used for morphological comparison purposes. The synthesized material as well as the device (aluminium electrodes/PVDF-PT3MA-Zn2SiO4:Mn/ITO/glass) was characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray spectroscopy (EDX), dark current-voltage (I-V) characteristic curves, absorbance and photoluminescence (PL) spectroscopy. The results show spherical-and irregular-shaped microparticles both dispersed on and within the PVDF matrix, which correspond to PT3MA and Zn2SiO4:Mn, respectively. The hybrid composite shows strong luminescence at approximate to 525 nm superimposed by a broadband between 600 and 800 nm, originating from the Zn2SiO4:Mn radiative transitions and from the recombination of photogenerated carriers at PT3MA. At room temperature, the device presented semiconductor behaviour typically observed for photodetectors and a DC electrical conductivity of approximate to 0.37 mu S cm(-1).Peer Reviewe