45 research outputs found

    Highly indistinguishable single photons from incoherently and coherently excited GaAs quantum dots

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    Semiconductor quantum dots are converging towards the demanding requirements of photonic quantum technologies. Among different systems, quantum dots with dimensions exceeding the free-exciton Bohr radius are appealing because of their high oscillator strengths. While this property has received much attention in the context of cavity quantum electrodynamics, little is known about the degree of indistinguishability of single photons consecutively emitted by such dots and on the proper excitation schemes to achieve high indistinguishability. A prominent example is represented by GaAs quantum dots obtained by local droplet etching, which recently outperformed other systems as triggered sources of entangled photon pairs. On these dots, we compare different single-photon excitation mechanisms, and we find (i) a "phonon bottleneck" and poor indistinguishability for conventional excitation via excited states and (ii) photon indistinguishablilities above 90% for both strictly resonant and for incoherent acoustic- and optical-phonon-assisted excitation. Among the excitation schemes, optical phonon-assisted excitation enables straightforward laser rejection without a compromise on the source brightness together with a high photon indistinguishability

    Fabrication And Optical Properties Of Strain-free Self-assembled Mesoscopic Gaas Structures

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    Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 mu m and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.12SisNano (MCTI Brazil)FAPESP [2012/11382-9, 2014/17141-9, 2015/08344-6, 2016/14001-7]CNPq [482729/2013-9, 305769/2015-4, 475343/2013-1]CAPESFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES

    Strain-Tunable GaAs Quantum dot: A Nearly Dephasing-Free Source of Entangled Photon Pairs on Demand

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    Entangled photon generation from semiconductor quantum dots via the biexciton-exciton cascade underlies various decoherence mechanisms related to the solid-state nature of the quantum emitters. So far, this has prevented the demonstration of nearly-maximally entangled photons without the aid of inefficient and complex post-selection techniques that are hardly suitable for quantum communication technologies. Here, we tackle this challenge using strain-tunable GaAs quantum dots driven under two-photon resonant excitation and with strictly-degenerate exciton states. We demonstrate experimentally that our on-demand source generates polarization-entangled photons with fidelity of 0.978(5) and concurrence of 0.97(1) without resorting to post-selection techniques. Moreover, we show that the remaining decoherence mechanisms can be overcome using a modest Purcell enhancement so as to achieve a degree of entanglement >0.99. Our results highlight that GaAs quantum dots can be readily used in advanced communication protocols relying on the non-local properties of quantum entanglement

    On-demand generation of background--free single photons from a solid-state source

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    True on--demand high--repetition--rate single--photon sources are highly sought after for quantum information processing applications. However, any coherently driven two-level quantum system suffers from a finite re-excitation probability under pulsed excitation, causing undesirable multi--photon emission. Here, we present a solid--state source of on--demand single photons yielding a raw second--order coherence of g(2)(0)=(7.5±1.6)×10−5g^{(2)}(0)=(7.5\pm1.6)\times10^{-5} without any background subtraction nor data processing. To this date, this is the lowest value of g(2)(0)g^{(2)}(0) reported for any single--photon source even compared to the previously best background subtracted values. We achieve this result on GaAs/AlGaAs quantum dots embedded in a low--Q planar cavity by employing (i) a two--photon excitation process and (ii) a filtering and detection setup featuring two superconducting single--photon detectors with ultralow dark-count rates of (0.0056±0.0007)s−1(0.0056\pm0.0007) s^{-1} and (0.017±0.001)s−1(0.017\pm0.001) s^{-1}, respectively. Re--excitation processes are dramatically suppressed by (i), while (ii) removes false coincidences resulting in a negligibly low noise floor

    Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

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    Key requirements for quantum plasmonic nanocircuits are reliable single-photon sources, high coupling efficiency to the plasmonic structures and low propagation losses. Self-assembled epitaxially grown GaAs quantum dots are close to ideal stable, bright and narrowband single-photon emitters. Likewise, wet-chemically grown monocrystalline silver nanowires are among the best plasmonic waveguides. However, large propagation losses of surface plasmons on the high-index GaAs substrate prevent their direct combination. Here, we show by experiment and simulation that the best overall performance of the quantum plasmonic nanocircuit based on these building blocks is achieved in the intermediate field regime with an additional spacer layer between the quantum dot and the plasmonic waveguide. High-resolution cathodoluminescence measurements allow a precise determination of the coupling distance and support a simple analytical model to explain the overall performance. The coupling efficiency is increased up to four times by standing wave interference near the end of the waveguide.Comment: Accepted at ACS Nano Letters; contains main text and supporting informatio

    Entanglement swapping with photons generated on-demand by a quantum dot

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    Photonic entanglement swapping, the procedure of entangling photons without any direct interaction, is a fundamental test of quantum mechanics and an essential resource to the realization of quantum networks. Probabilistic sources of non-classical light can be used for entanglement swapping, but quantum communication technologies with device-independent functionalities demand for push-button operation that, in principle, can be implemented using single quantum emitters. This, however, turned out to be an extraordinary challenge due to the stringent requirements on the efficiency and purity of generation of entangled states. Here we tackle this challenge and show that pairs of polarization-entangled photons generated on-demand by a GaAs quantum dot can be used to successfully demonstrate all-photonic entanglement swapping. Moreover, we develop a theoretical model that provides quantitative insight on the critical figures of merit for the performance of the swapping procedure. This work shows that solid-state quantum emitters are mature for quantum networking and indicates a path for scaling up.Comment: The first four authors contributed equally to this work. 17 pages, 3 figure

    GaAs quantum dots under quasi-uniaxial stress: experiment and theory

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    The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the optical properties of nanostructures, we determine the quantum dot morphology and the in-plane components of externally induced strain tensor at the quantum dot positions. Based on these experimentally determined parameters, we calculate the strain-dependent excitonic emission energy, degree of linear polarization, and fine-structure splitting using a combination of eight-band kâ‹…p{\bf k}\cdot{\bf p} formalism with multiparticle corrections using the configuration interaction method. The presented experimental observations are quantitatively well reproduced by our calculations

    Resonance fluorescence of GaAs quantum dots with near-unity photon indistinguishability

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    Photonic quantum technologies call for scalable quantum light sources that can be integrated, while providing the end user with single and entangled photons on-demand. One promising candidate are strain free GaAs/AlGaAs quantum dots obtained by droplet etching. Such quantum dots exhibit ultra low multi-photon probability and an unprecedented degree of photon pair entanglement. However, different to commonly studied InGaAs/GaAs quantum dots obtained by the Stranski-Krastanow mode, photons with a near-unity indistinguishability from these quantum emitters have proven to be elusive so far. Here, we show on-demand generation of near-unity indistinguishable photons from these quantum emitters by exploring pulsed resonance fluorescence. Given the short intrinsic lifetime of excitons confined in the GaAs quantum dots, we show single photon indistinguishability with a raw visibility of Vraw=(94.2±5.2) %V_{raw}=(94.2\pm5.2)\,\%, without the need for Purcell enhancement. Our results represent a milestone in the advance of GaAs quantum dots by demonstrating the final missing property standing in the way of using these emitters as a key component in quantum communication applications, e.g. as an entangled source for quantum repeater architectures

    Collective Excitation of Spatio-Spectrally Distinct Quantum Dots Enabled by Chirped Pulses

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    For a scalable photonic device producing entangled photons, it is desirable to have multiple quantum emitters in an ensemble that can be collectively excited, despite their spectral variability. For quantum dots, Rabi rotation, the most popular method for resonant excitation, cannot assure a universal, highly efficient excited state preparation, because of its sensitivity to the excitation parameters. In contrast, Adiabatic Rapid Passage (ARP), relying on chirped optical pulses, is immune to quantum dot spectral inhomogeneity. Here, we advocate the robustness of ARP for simultaneous excitation of the biexciton states of multiple quantum dots. For positive chirps, we find that there is also regime of phonon advantage that widens the tolerance range of spectral detunings. Using the same laser pulse we demonstrate the simultaneous excitation of energetically and spatially distinct quantum dots. Being able to generate spatially multiplexed entangled photon pairs is a big step towards the scalability of photonic devices
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