The intergenerational correlation in AFDC participation: Welfare trap or poverty trap?

Several recent studies have shown that daughters whose mothers have participated in the welfare program Aid to Families with Dependent Children (AFDC), are themselves more likely to participate in AFDC when they head their own household. Other studies have shown that the earnings of parents and their children are highly correlated across generations. This suggests that any variable correlated with income such as AFDC participation will also be correlated across generations. This paper uses data from the original and youth cohorts of the National Longitudinal Surveys to investigate the question of whether the link in mother-daughter welfare participation is a causal relationship, or whether it can be explained by the expected intergenerational correlation in earnings. Several reduced-form probit equations are estimated, and attention is directed to the potential endogeneity of key explanatory variables. The empirical findings suggest that much of the observed correlation in AFDC participation across generations can be explained by the intergenerational correlation of income and other family characteristics.

An empirical analysis of the welfare magnet debate using the NLSY

This paper examines the extent to which differences in welfare generosity across states lead to interstate migration. Using microdata from the National Longitudinal Survey of Youth between 1979 and 1992, we employ a quasi-experimental design that utilizes the categorical eligibility of the welfare system. The "treatment" group consists of all those in the survey who appear eligible to participate in Aid to Families with Dependent Children. The "control" group contains those who are poor but ineligible for other reasons. The pattern of cross-state moves among poor single women with children who are likely to be eligible for benefits (treatment-group members) is compared to the pattern among other poor households. We find little evidence indicating that welfare-induced migration is a widespread phenomenon.

Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices

We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and charge offset drift of 0.01 e over eight days. In addition, the devices exhibit robust transistor characteristics including uniformity within about 0.5 V in the threshold voltage, gate resistances greater than 10 G{\Omega}, and immunity to dielectric breakdown in electric fields as high as 4 MV/cm. These results highlight the benefits in device performance of a fully CMOS process for single electron device fabrication.Comment: 7 pages, 7 figure

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time.Comment: 4 pages, 5 figures (color

A search for 183-GHz emission from water in late-type stars

A search was made for 183 GHz line emission from water vapor in the direction of twelve Mira and two semiregular variables. Upper limits to the emission are in the range of 2000 to 5000 Jy. It is estimated that thermal emission from the inner regions of late type stellar envelopes will be on the order of ten Jy. Maser emission, according to one model, would be an order of magnitude stronger. From the limited set sampled, the possibility of very strong maser emission at 183 GHz cannot yet be ruled out

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing

We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode. Decent agreement with the refrigerator temperature was observed over a broad range of temperatures down to 10 mK. Upon cooling nuclear demagnetization stages integrated into the sample wires below 1 mK, the device electron temperature saturates, remaining close to 10 mK. The extreme sensitivity of the thermometer to its environment as well as electronic noise complicates temperature measurements but could potentially provide further insight into the device characteristics. We discuss thermal coupling mechanisms, address possible reasons for the temperature saturation and delineate the prospects of further reducing the device electron temperature.Comment: 8 pages, 3 (color) figure