3,144 research outputs found

    EXPERIMENTAL STRESS CONCENTRATION FACTOR IN CONCRETE-FILLED STEEL TUBULAR T-JOINTS

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    © 2018 Elsevier Ltd An experimental investigation of stress concentration factor (SCF) in Steel circular hollow section brace welded to concrete-filled circular hollow section chord (CHS-to-CFCHS) T-joints has been performed under axial tension, axial compression, in-plane bending and out-of-plane bending. The distribution of SCF around the welded brace-to-chord intersection on both the brace and chord has been investigated using three CHS-to-CFCHS T-joint specimens. The experimental SCF results have been compared with the predicted SCF in empty T-joints. The relationship between the maximum SCF in relation to parameter β, with fixed other geometrical parameters, has been investigated for the basic load conditions. The experimental maximum SCF under axial tension has been compared with the predicted maximum SCF from parametric equations for CHS-to-CFCHS T-joints previously developed by the authors. The results show that the concrete has a significant effect in reducing the SCF, mostly under axial tension and the parametric equations for predicting SCFs in empty T-joints are not suitable for CHS-to-CFCHS T-joints. The effect of parameter β on the maximum SCF in CHS-to-CFCHS T-joints is significant under axial tension and out-of-plane bending moment

    Capacitance switching in SiO 2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination

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    A structure of indium tin oxide/ SiO 2 embedded with Ge nanocrystal (nc-Ge) /p-Si substrate was fabricated. The capacitance of the structure can be switched to a high-capacitance or low-capacitance state by an ultraviolet (UV) illumination. The increase (or decrease) in the capacitance is accompanied with the decrease (or increase) in the oxide resistance. The capacitance switching is explained in terms of the UV illumination-induced charging and discharging in the nc-Ge. © 2009 American Institute of Physics.published_or_final_versio

    Dent disease: A window into calcium and phosphate transport

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    This review examines calcium and phosphate transport in the kidney through the lens of the rare X-linked genetic disorder Dent disease. Dent disease type 1 (DD1) is caused by mutations in the CLCN5 gene encoding ClC-5, a Cl- /H+ antiporter localized to early endosomes of the proximal tubule (PT). Phenotypic features commonly include low molecular weight proteinuria (LMWP), hypercalciuria, focal global sclerosis and chronic kidney disease; calcium nephrolithiasis, nephrocalcinosis and hypophosphatemic rickets are less commonly observed. Although it is not surprising that abnormal endosomal function and recycling in the PT could result in LMWP, it is less clear how ClC-5 dysfunction disturbs calcium and phosphate metabolism. It is known that the majority of calcium and phosphate transport occurs in PT cells, and PT endocytosis is essential for calcium and phosphorus reabsorption in this nephron segment. Evidence from ClC-5 KO models suggests that ClC-5 mediates parathormone endocytosis from tubular fluid. In addition, ClC-5 dysfunction alters expression of the sodium/proton exchanger NHE3 on the PT apical surface thus altering transcellular sodium movement and hence paracellular calcium reabsorption. A potential role for NHE3 dysfunction in the DD1 phenotype has never been investigated, either in DD models or in patients with DD1, even though patients with DD1 exhibit renal sodium and potassium wasting, especially when exposed to even a low dose of thiazide diuretic. Thus, insights from the rare disease DD1 may inform possible underlying mechanisms for the phenotype of hypercalciuria and idiopathic calcium stones

    Quenching and reactivation of electroluminescence by charge trapping and detrapping in Si-implanted silicon nitride thin film

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    In this brief, quenching of electroluminescence (EL) from Si-implanted silicon nitride (SNR) thin film under a forward bias has been observed. The quenching phenomenon is shown to be due to charge trapping in the defect states involved in the radiative recombination. The composite EL bands have different quenching rates, causing a change in the EL spectrum shape by the EL quenching. Release of the trapped charges by a low-temperature annealing at 120 °C or an application of a reverse gate bias can partially recover the quenched EL both in the intensity and spectrum shape. The quenching phenomenon poses a serious challenge to the application of Si-implanted SNR thin films in light-emitting devices. © 2009 IEEE.published_or_final_versio

    Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing

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    Influence of thermal annealing on electroluminescence (EL) from multiple-Si-implanted silicon nitride films has been investigated. A reduced injection current and an enhanced EL intensity have been obtained simultaneously by increasing the annealing temperature, which results in a higher EL quantum efficiency. In addition, four emission bands are identified, and their peak energies, intensities, and full widths at half maxima are found to change with annealing temperature. A model is proposed to illustrate the carrier transport, the mechanisms of the four emission bands, and the evolution of the EL bands with annealing as well. The two major bands and the minor ultraviolet band are explained in terms of the recombination of the injected electrons in either the silicon dangling-bond (≡ Si 0) states or the nitride conduction band with the injected holes in either the band tail states above the nitride valence band or the valence band itself, while the minor near infrared band is attributed to the Si nanocrystals formed in the thin film. © 2009 American Institute of Physics.published_or_final_versio

    Photon-induced conduction modulation in SiO 2 thin films embedded with Ge nanocrystals

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    The authors report the photon-induced conduction modulation in Si O2 thin films embedded with germanium nanocrystals (nc-Ge). The conduction of the oxide could be switched to a higher- or lower-conductance state by a ultraviolet (UV) illumination. The conduction modulation is caused by charging and discharging in the nc-Ge due to the UV illumination. If the charging process is dominant, the oxide conductance is reduced; however, if the discharging process is dominant, the oxide conductance is increased. As the conduction can be modulated by UV illumination, it could have potential applications in silicon-based optical memory devices. © 2007 American Institute of Physics.published_or_final_versio

    Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure

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    We report a study on the influence of charge trapping on electroluminescence (EL) from Si nanocrystal (nc-Si) distributed throughout a 30 nm Si O2 thin film synthesized by Si+ implantation into an oxide film thermally grown on a p -type Si substrate. The electron and hole trapping in the nc-Si located near the indium tin oxide gate and the Si substrate, respectively, cause a reduction in the EL intensity. The reduced EL intensity can be recovered after the trapped charges are released. A partial recovery can be easily achieved by the application of a positive gate voltage or thermal annealing at hot temperatures (e.g., 120 °C) for a short duration. The present study highlights the impact of charging in the nc-Si on the light emission efficiency and its stability of nc-Si light-emitting devices. © 2007 American Institute of Physics.published_or_final_versio

    Characterization of Phenolics in Rejected Kiwifruit and Their Antioxidant Potential

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    Kiwifruit hold significant nutritional value and are a good source of antioxidants due to their diverse range of bioactive compounds. Kiwifruit waste is generated throughout the food supply chain, particularly during transportation and storage. Kiwifruit rejected from the retail market due to unfavorable appearance still possess potential economic value as kiwifruit are abundant in phenolic compounds. The present work studied the phenolic profile and antioxidant potential of rejected kiwifruit, including SunGold (Actinidia chinensis), Hayward (Actinidia deliciosa), and round organic Hayward (Actinidia deliciosa). Regarding phenolics estimation, SunGold possessed the highest TPC (0.72 ± 0.01 mg GAE/g), while Hayward exhibited the highest TFC (0.05 ± 0.09 mg QE/g). In antioxidant assays, SunGold showed the highest antioxidant activities in DPPH (0.31 ± 0.35 mg AAE/g), FRAP (0.48 ± 0.04 mg AAE/g), ABTS (0.69 ± 0.07 mg AAE/g), •OH-RSA (0.07 ± 0.03 mg AAE/g) assays, and FICA (0.19 ± 0.07 mg EDTA/g), whereas Hayward showed the highest RPA (0.09 ± 0.02 mg AAE/g) and TAC (0.57 ± 0.04 mg AAE/g). Separation and characterization of phenolics were conducted using LC-ESI-QTOF-MS/MS. A total of 97 phenolics were tentatively characterized from rejected SunGold (71 phenolics), Hayward (55 phenolics), and round organic Hayward (9 phenolics). Hydroxycinnamic acids and flavonols were the most common phenolics characterized in the three samples. The quantitative analysis was conducted by HPLC-PDA and found that chlorogenic acid (23.98 ± 0.95 mg/g), catechin (23.24 ± 1.16 mg/g), and quercetin (24.59 ± 1.23 mg/g) were the most abundant phenolics present in the rejected kiwifruit samples. The notable presence of phenolic compounds and their corresponding antioxidant capacities indicate the potential value of rescuing rejected kiwifruit for further utilization and commercial exploitation

    Accurate reconstruction of insertion-deletion histories by statistical phylogenetics

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    The Multiple Sequence Alignment (MSA) is a computational abstraction that represents a partial summary either of indel history, or of structural similarity. Taking the former view (indel history), it is possible to use formal automata theory to generalize the phylogenetic likelihood framework for finite substitution models (Dayhoff's probability matrices and Felsenstein's pruning algorithm) to arbitrary-length sequences. In this paper, we report results of a simulation-based benchmark of several methods for reconstruction of indel history. The methods tested include a relatively new algorithm for statistical marginalization of MSAs that sums over a stochastically-sampled ensemble of the most probable evolutionary histories. For mammalian evolutionary parameters on several different trees, the single most likely history sampled by our algorithm appears less biased than histories reconstructed by other MSA methods. The algorithm can also be used for alignment-free inference, where the MSA is explicitly summed out of the analysis. As an illustration of our method, we discuss reconstruction of the evolutionary histories of human protein-coding genes.Comment: 28 pages, 15 figures. arXiv admin note: text overlap with arXiv:1103.434
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