Global river economic belts can become more sustainable by considering economic and ecological processes

High-quality regional development requires coupling of socioeconomic and natural domains, but it remains unclear how to effectively integrate the regional economy with river basin ecosystems. Here we establish a developmental perspective of 65 river economic belts, formed through history along the main stems of the world’s great rivers, covering initial, developing, and developed stages. We find that river economic belts characterized by basin-based regional integration can substantially upgrade their eco-efficiency through the harmonization of enhanced regional economic growth and efficient utilization of basin resources, once key prerequisites (e.g., gross domestic product per capita, de-industrialization status, and human development index) are met for river economic belts entering the developed stage. Importantly, primary concerns such as resource stress, environmental pollution, and biodiversity loss are also inherently addressed. Under representative scenarios of regional development planning and climate change (2015–2050), the basin-based regional integration strategy would provide river economic belts with new opportunities and pathways towards sustainability in emerging regions worldwide.</p

Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device

In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode-based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write-read-erase-read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady-state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems. © 2019 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinhei

Hybrid minigene splicing assay verifies the pathogenicity of a novel splice site variant in the COL1A1 gene of a chinese patient with osteogenesis imperfecta type I

Abstract(#br)Background(#br)Osteogenesis imperfecta (OI) is a rare genetic bone disease associated with brittle bones and fractures. Among all known types, OI type I is the most common type and characterized by increased bone fragility, low bone mass, distinctly blue-gray sclera, and susceptibility to conductive hearing loss beginning in adolescence. Mutations in genes encoding type I collagen ( COL1A1 and COL1A2 ) contribute to the main pathogenic mechanism of OI.(#br)Methods(#br)Subtle mutation of the COL1A1 gene in the proband was detected by targeted next-generation sequencing (NGS) and confirmed by Sanger sequencing. We then assessed the effect of the mutation on the splicing of the COL1A1 gene by bioinformatics prediction and hybrid minigene splicing assay (HMSA).(#br)Results(#br)A novel splice site mutation c.1821+1 G > C was discovered in the proband by NGS and further confirmed by Sanger sequencing, which was also simultaneously identified from the proband’s mother and elder sister. Bioinformatics predicted that this mutation would result in a disappearance of the 5′ donor splice site in intron 26, thereby leading to abnormal splicing and generation of premature stop codon. The follow-up experimental data generated by HMSA was consistent with this prediction.(#br)Conclusion(#br)Our study identified a novel splice site mutation that caused OI type I in the proband by abnormal splicing and demonstrated that combined applications of NGS, bioinformatics and HMSA are comprehensive and effective methods for diagnosis and aberrant splicing study of OI

pinMOS Memory: A novel, diode-based organic memory device

A novel, non-volatile, organic capacitive memory device called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with multiple-bit storage that can be programmed and read out electrically and optically. The diode-based architecture simplifies the fabrication process, and makes further optimizations easy, and might even inspire new derived capacitive memory devices. Furthermore, this innovative pinMOS memory device features local charge up of an integrated capacitance rather than of an extra floating gate. Before the device can perform as desired, the leakage current due to the lateral charge up of the doped layers outside the active area needs to be suppressed. Therefore, in this thesis, lateral charging effects in organic light-emitting diodes (OLEDs) are studied first. By comparing the results from differently structured devices, the presence of centimeter-scale lateral current flows in the n-doped and p-doped layers is shown, which results in undesirable capacitance increases and thus extra leakage currents. Such lateral charging can be controlled via structuring the doped layers, leading to extremely low steady-state leakage currents in the OLED (here 10-7 mA/cm2 at -1 V). It is shown that these lateral currents can be utilized to extract the conductivity as well as the activation energy of each doped layer when modeled with an RC circuit model. Secondly, pinMOS memory devices that are based on the diode with structured doped layers are investigated. The memory behavior, which is demonstrated as capacitance switching for electrical signals, and light emission for optical signals, can be tuned either by the applied voltage or ultraviolet light illumination, respectively. The working mechanism is explained by the existence of quasi steady-states as well as the width variation of space charge zones. The pinMOS memory shows excellent repeatability, an endurance of more than 104 write-read-erase-read cycles, and currently already over 24 h retention time. Furthermore, an early-stage investigation on emulating synaptic plasticity reveals the potential of pinMOS memory for applications in neuromorphic computing. Overall, the results indicate that pinMOS memory in principle is promising for a variety of future applications in both electronic and photonic circuits. A detailed understanding of this new concept of memory device, for which this thesis lays an important foundation, is necessary to proceed with further enhancements.:1 Introduction 1 2 Fundamentals of organic semiconductors 5 2.1 Electronic states of a molecule 5 2.1.1 Atomic orbitals and molecular orbitals 5 2.1.2 Solid states 9 2.1.3 Singlet and triplet states 12 2.2 Charge transport 13 2.2.1 Charge carrier mobility 13 2.2.2 Charge carrier transport 14 2.3 Charge injection 17 2.3.1 Current limitation 17 2.3.2 Charge injection mechanisms 20 2.4 Doping 22 3 Organic junctions and devices 25 3.1 Metal-semiconductor junction 25 3.1.1 Schottky junction 25 3.1.2 Surface states 27 3.2 Metal-oxide-semiconductor capacitor 29 3.3 Junctions and diodes 31 3.3.1 PN junction and diode 31 3.3.2 PIN junction and diode 32 4 Organic non-volatile memory devices 35 4.1 Basic concepts 35 4.2 Organic resistive memory devices 37 4.2.1 Device architecture and switching behavior 38 4.2.2 Working mechanisms 38 4.3 Organic transistor-based memory devices 41 4.3.1 Organic field-effect transistor and memory devices based thereon 41 4.3.2 Floating gate memory 43 4.3.3 Charge trapping memory 45 4.4 Organic ferroelectric memory devices 46 4.4.1 Ferroelectric capacitor memory 47 4.4.2 Ferroelectric transistor memory 48 4.4.3 Ferroelectric diode memory 49 5 Experimental methods 53 5.1 Device fabrication 53 5.2 Device characterization 55 5.3 Materials 57 6 Lateral current flow in semiconductor devices having crossbar electrodes 61 6.1 Introduction 61 6.2 Device architecture 62 6.3 Characteristics comparison between unstructured and structured devices 63 6.3.1 Charging measurement 63 6.3.2 Current-voltage characteristics 64 6.3.3 Capacitance-frequency characteristics 67 6.4 Influence of conductivity of doped layers 69 6.4.1 Dependence on doped layers thickness 69 6.4.2 Dependence on temperature 73 6.5 Lateral charging simulation 74 6.5.1 Analytical description 74 6.5.2 RC circuit simulation 76 6.5.3 Parameters for doped layers gained by simulation 79 6.6 Pseudo trap analysis 81 6.6.1 The pseudo trap density of states determination 81 6.6.2 The pseudo trap analysis under simulated identical conditions 84 6.7 Summary 85 7 The pinMOS memory: novel diode-capacitor memory with multiple-bit storage 87 7.1 Introduction 87 7.2 Device architecture 88 7.2.1 Dependence on layout and pixel 89 7.2.2 Fundamental memory behavior characterization 93 7.3 Working mechanism 96 7.3.1 Working mechanism of quasi-steady states 97 7.3.2 Working mechanism of dynamic states 101 7.4 Tunability of the memory effect 105 7.4.1 Operation parameters 106 7.4.2 Photoinduced tunability 108 7.4.3 Intrinsic layer thickness 110 7.5 Potential in neuromorphic computing application 111 7.5.1 Extracting capacitance at 0 V sequentially 112 7.5.2 Mimicking the long-term plasticity (LTP) behavior 113 7.6 Summary 114 8 Optoelectronic properties of pinMOS memory 117 8.1 Introduction 117 8.2 Measurement setup 117 8.3 pinMOS memory emission intensity 118 8.4 Pulse characteristics and device brightness 119 8.5 Conclusion 124 9 Conclusion 125 Bibliography 129 List of Figures 145 List of Tables 151 List of Abbreviations 153 Publications and Conference 157 Acknowledgment 159Es wird ein neuartiges, organisches kapazitives Speicherelement demonstriert, das p-i-n-Metalloxid-Halbleiter (pinMOS) Speicher genannt wird und eine Mehrfachbitspeicherung besitzt, die elektrisch und optisch programmiert und ausgelesen werden kann. Die auf einer Diode basierende Architektur vereinfacht den Herstellungsprozess sowie die weitere Optimierung und könnte sogar Inspiration für neue kapazitive Speichermedien sein. Darüber hinaus basiert dieses innovative pinMOS Speicherelement auf der lokalen Aufladung einer integrierten Kapazität und nicht auf einem zusätzlichem “Floating Gate”. Bevor das Speicherelement wie gewünscht funktioniert, muss der Leckstrom, der durch die laterale Aufladung der dotierten Schichten außerhalb des aktiven Bereichs verursacht wird, unterdrückt werden. Deshalb werden in dieser Arbeit zuerst die lateralen Aufladungseffekte in organischen Leuchtdioden (OLEDs) untersucht. Beim Vergleich verschiedener Device-Strukturen wird die Existenz von lateralen Stromflüssen im Zentimeterbereich in den n- und p-dotierten Schichten gezeigt, was zu einer unerwünschten erhöhten Kapazität und folglich einem höheren Leckstrom führt. Diese laterale Aufladung kann durch die Strukturierung der dotierten Schichten kontrolliert werden, was zu extrem geringen Gleichgewichtsleckströmen in den OLEDs (10-7 mA/cm2 bei -1 V) resultiert. Es wird auch gezeigt, dass die lateralen Ströme genutzt werden können um die spezifische Leitfähigkeit sowie die Aktivierungsenergie der einzelnen dotierten Schichten zu extrahieren, wenn diese mit einem RC-Modell modelliert werden. Im zweiten Teil werden pinMOS Speicherelemente, die auf der Diode mit strukturierten dotierten Schichten basieren, untersucht. Das Speicherverhalten, dass durch Kapazitätsschaltung für elektrische Signale und als Lichtemission für optische Signale gezeigt wird, kann entweder durch die angelegte Spannung, beziehungsweise durch die Belichtung mit ultraviolettem Licht eingestellt werden. Die Wirkungsweise wird durch die Existenz quasistatischer Gleichgewichte sowie durch die Größenänderung der Raumladungszonen erklärt. Der pinMOS Speicher zeigt eine hervorragende Wiederholbarkeit, eine Beständigkeit über mehr als 104 Schreiben-Lesen-Löschen-Lesen Zyklen und aktuell schon eine Retentionszeit von über 24 h. Weiterhin offenbaren erste Versuche in der Nachahmung von Neuronaler Plastizität das Potenzial von pinMOS Speichern für Anwendungen im “Neuromorphic Computing”. Insgesamt deuten die Ergebnisse an, dass pinMOS Speicher prinzipiell vielversprechend für eine Vielzahl von zukünftigen Anwendungen in elektronischen und photonischen Schaltkreisen ist. Ein tiefgreifendes Verständnis von diesem Konzept neuartiger Speicherelemente, für das diese Arbeit eine wichtige Grundlage bildet, ist notwendig, um weitere Verbesserungen zu entwickeln.:1 Introduction 1 2 Fundamentals of organic semiconductors 5 2.1 Electronic states of a molecule 5 2.1.1 Atomic orbitals and molecular orbitals 5 2.1.2 Solid states 9 2.1.3 Singlet and triplet states 12 2.2 Charge transport 13 2.2.1 Charge carrier mobility 13 2.2.2 Charge carrier transport 14 2.3 Charge injection 17 2.3.1 Current limitation 17 2.3.2 Charge injection mechanisms 20 2.4 Doping 22 3 Organic junctions and devices 25 3.1 Metal-semiconductor junction 25 3.1.1 Schottky junction 25 3.1.2 Surface states 27 3.2 Metal-oxide-semiconductor capacitor 29 3.3 Junctions and diodes 31 3.3.1 PN junction and diode 31 3.3.2 PIN junction and diode 32 4 Organic non-volatile memory devices 35 4.1 Basic concepts 35 4.2 Organic resistive memory devices 37 4.2.1 Device architecture and switching behavior 38 4.2.2 Working mechanisms 38 4.3 Organic transistor-based memory devices 41 4.3.1 Organic field-effect transistor and memory devices based thereon 41 4.3.2 Floating gate memory 43 4.3.3 Charge trapping memory 45 4.4 Organic ferroelectric memory devices 46 4.4.1 Ferroelectric capacitor memory 47 4.4.2 Ferroelectric transistor memory 48 4.4.3 Ferroelectric diode memory 49 5 Experimental methods 53 5.1 Device fabrication 53 5.2 Device characterization 55 5.3 Materials 57 6 Lateral current flow in semiconductor devices having crossbar electrodes 61 6.1 Introduction 61 6.2 Device architecture 62 6.3 Characteristics comparison between unstructured and structured devices 63 6.3.1 Charging measurement 63 6.3.2 Current-voltage characteristics 64 6.3.3 Capacitance-frequency characteristics 67 6.4 Influence of conductivity of doped layers 69 6.4.1 Dependence on doped layers thickness 69 6.4.2 Dependence on temperature 73 6.5 Lateral charging simulation 74 6.5.1 Analytical description 74 6.5.2 RC circuit simulation 76 6.5.3 Parameters for doped layers gained by simulation 79 6.6 Pseudo trap analysis 81 6.6.1 The pseudo trap density of states determination 81 6.6.2 The pseudo trap analysis under simulated identical conditions 84 6.7 Summary 85 7 The pinMOS memory: novel diode-capacitor memory with multiple-bit storage 87 7.1 Introduction 87 7.2 Device architecture 88 7.2.1 Dependence on layout and pixel 89 7.2.2 Fundamental memory behavior characterization 93 7.3 Working mechanism 96 7.3.1 Working mechanism of quasi-steady states 97 7.3.2 Working mechanism of dynamic states 101 7.4 Tunability of the memory effect 105 7.4.1 Operation parameters 106 7.4.2 Photoinduced tunability 108 7.4.3 Intrinsic layer thickness 110 7.5 Potential in neuromorphic computing application 111 7.5.1 Extracting capacitance at 0 V sequentially 112 7.5.2 Mimicking the long-term plasticity (LTP) behavior 113 7.6 Summary 114 8 Optoelectronic properties of pinMOS memory 117 8.1 Introduction 117 8.2 Measurement setup 117 8.3 pinMOS memory emission intensity 118 8.4 Pulse characteristics and device brightness 119 8.5 Conclusion 124 9 Conclusion 125 Bibliography 129 List of Figures 145 List of Tables 151 List of Abbreviations 153 Publications and Conference 157 Acknowledgment 15

pinMOS Memory: A novel, diode-based organic memory device

A novel, non-volatile, organic capacitive memory device called p-i-n-metal-oxide-semiconductor (pinMOS) memory is demonstrated with multiple-bit storage that can be programmed and read out electrically and optically. The diode-based architecture simplifies the fabrication process, and makes further optimizations easy, and might even inspire new derived capacitive memory devices. Furthermore, this innovative pinMOS memory device features local charge up of an integrated capacitance rather than of an extra floating gate. Before the device can perform as desired, the leakage current due to the lateral charge up of the doped layers outside the active area needs to be suppressed. Therefore, in this thesis, lateral charging effects in organic light-emitting diodes (OLEDs) are studied first. By comparing the results from differently structured devices, the presence of centimeter-scale lateral current flows in the n-doped and p-doped layers is shown, which results in undesirable capacitance increases and thus extra leakage currents. Such lateral charging can be controlled via structuring the doped layers, leading to extremely low steady-state leakage currents in the OLED (here 10-7 mA/cm2 at -1 V). It is shown that these lateral currents can be utilized to extract the conductivity as well as the activation energy of each doped layer when modeled with an RC circuit model. Secondly, pinMOS memory devices that are based on the diode with structured doped layers are investigated. The memory behavior, which is demonstrated as capacitance switching for electrical signals, and light emission for optical signals, can be tuned either by the applied voltage or ultraviolet light illumination, respectively. The working mechanism is explained by the existence of quasi steady-states as well as the width variation of space charge zones. The pinMOS memory shows excellent repeatability, an endurance of more than 104 write-read-erase-read cycles, and currently already over 24 h retention time. Furthermore, an early-stage investigation on emulating synaptic plasticity reveals the potential of pinMOS memory for applications in neuromorphic computing. Overall, the results indicate that pinMOS memory in principle is promising for a variety of future applications in both electronic and photonic circuits. A detailed understanding of this new concept of memory device, for which this thesis lays an important foundation, is necessary to proceed with further enhancements.:1 Introduction 1 2 Fundamentals of organic semiconductors 5 2.1 Electronic states of a molecule 5 2.1.1 Atomic orbitals and molecular orbitals 5 2.1.2 Solid states 9 2.1.3 Singlet and triplet states 12 2.2 Charge transport 13 2.2.1 Charge carrier mobility 13 2.2.2 Charge carrier transport 14 2.3 Charge injection 17 2.3.1 Current limitation 17 2.3.2 Charge injection mechanisms 20 2.4 Doping 22 3 Organic junctions and devices 25 3.1 Metal-semiconductor junction 25 3.1.1 Schottky junction 25 3.1.2 Surface states 27 3.2 Metal-oxide-semiconductor capacitor 29 3.3 Junctions and diodes 31 3.3.1 PN junction and diode 31 3.3.2 PIN junction and diode 32 4 Organic non-volatile memory devices 35 4.1 Basic concepts 35 4.2 Organic resistive memory devices 37 4.2.1 Device architecture and switching behavior 38 4.2.2 Working mechanisms 38 4.3 Organic transistor-based memory devices 41 4.3.1 Organic field-effect transistor and memory devices based thereon 41 4.3.2 Floating gate memory 43 4.3.3 Charge trapping memory 45 4.4 Organic ferroelectric memory devices 46 4.4.1 Ferroelectric capacitor memory 47 4.4.2 Ferroelectric transistor memory 48 4.4.3 Ferroelectric diode memory 49 5 Experimental methods 53 5.1 Device fabrication 53 5.2 Device characterization 55 5.3 Materials 57 6 Lateral current flow in semiconductor devices having crossbar electrodes 61 6.1 Introduction 61 6.2 Device architecture 62 6.3 Characteristics comparison between unstructured and structured devices 63 6.3.1 Charging measurement 63 6.3.2 Current-voltage characteristics 64 6.3.3 Capacitance-frequency characteristics 67 6.4 Influence of conductivity of doped layers 69 6.4.1 Dependence on doped layers thickness 69 6.4.2 Dependence on temperature 73 6.5 Lateral charging simulation 74 6.5.1 Analytical description 74 6.5.2 RC circuit simulation 76 6.5.3 Parameters for doped layers gained by simulation 79 6.6 Pseudo trap analysis 81 6.6.1 The pseudo trap density of states determination 81 6.6.2 The pseudo trap analysis under simulated identical conditions 84 6.7 Summary 85 7 The pinMOS memory: novel diode-capacitor memory with multiple-bit storage 87 7.1 Introduction 87 7.2 Device architecture 88 7.2.1 Dependence on layout and pixel 89 7.2.2 Fundamental memory behavior characterization 93 7.3 Working mechanism 96 7.3.1 Working mechanism of quasi-steady states 97 7.3.2 Working mechanism of dynamic states 101 7.4 Tunability of the memory effect 105 7.4.1 Operation parameters 106 7.4.2 Photoinduced tunability 108 7.4.3 Intrinsic layer thickness 110 7.5 Potential in neuromorphic computing application 111 7.5.1 Extracting capacitance at 0 V sequentially 112 7.5.2 Mimicking the long-term plasticity (LTP) behavior 113 7.6 Summary 114 8 Optoelectronic properties of pinMOS memory 117 8.1 Introduction 117 8.2 Measurement setup 117 8.3 pinMOS memory emission intensity 118 8.4 Pulse characteristics and device brightness 119 8.5 Conclusion 124 9 Conclusion 125 Bibliography 129 List of Figures 145 List of Tables 151 List of Abbreviations 153 Publications and Conference 157 Acknowledgment 159Es wird ein neuartiges, organisches kapazitives Speicherelement demonstriert, das p-i-n-Metalloxid-Halbleiter (pinMOS) Speicher genannt wird und eine Mehrfachbitspeicherung besitzt, die elektrisch und optisch programmiert und ausgelesen werden kann. Die auf einer Diode basierende Architektur vereinfacht den Herstellungsprozess sowie die weitere Optimierung und könnte sogar Inspiration für neue kapazitive Speichermedien sein. Darüber hinaus basiert dieses innovative pinMOS Speicherelement auf der lokalen Aufladung einer integrierten Kapazität und nicht auf einem zusätzlichem “Floating Gate”. Bevor das Speicherelement wie gewünscht funktioniert, muss der Leckstrom, der durch die laterale Aufladung der dotierten Schichten außerhalb des aktiven Bereichs verursacht wird, unterdrückt werden. Deshalb werden in dieser Arbeit zuerst die lateralen Aufladungseffekte in organischen Leuchtdioden (OLEDs) untersucht. Beim Vergleich verschiedener Device-Strukturen wird die Existenz von lateralen Stromflüssen im Zentimeterbereich in den n- und p-dotierten Schichten gezeigt, was zu einer unerwünschten erhöhten Kapazität und folglich einem höheren Leckstrom führt. Diese laterale Aufladung kann durch die Strukturierung der dotierten Schichten kontrolliert werden, was zu extrem geringen Gleichgewichtsleckströmen in den OLEDs (10-7 mA/cm2 bei -1 V) resultiert. Es wird auch gezeigt, dass die lateralen Ströme genutzt werden können um die spezifische Leitfähigkeit sowie die Aktivierungsenergie der einzelnen dotierten Schichten zu extrahieren, wenn diese mit einem RC-Modell modelliert werden. Im zweiten Teil werden pinMOS Speicherelemente, die auf der Diode mit strukturierten dotierten Schichten basieren, untersucht. Das Speicherverhalten, dass durch Kapazitätsschaltung für elektrische Signale und als Lichtemission für optische Signale gezeigt wird, kann entweder durch die angelegte Spannung, beziehungsweise durch die Belichtung mit ultraviolettem Licht eingestellt werden. Die Wirkungsweise wird durch die Existenz quasistatischer Gleichgewichte sowie durch die Größenänderung der Raumladungszonen erklärt. Der pinMOS Speicher zeigt eine hervorragende Wiederholbarkeit, eine Beständigkeit über mehr als 104 Schreiben-Lesen-Löschen-Lesen Zyklen und aktuell schon eine Retentionszeit von über 24 h. Weiterhin offenbaren erste Versuche in der Nachahmung von Neuronaler Plastizität das Potenzial von pinMOS Speichern für Anwendungen im “Neuromorphic Computing”. Insgesamt deuten die Ergebnisse an, dass pinMOS Speicher prinzipiell vielversprechend für eine Vielzahl von zukünftigen Anwendungen in elektronischen und photonischen Schaltkreisen ist. Ein tiefgreifendes Verständnis von diesem Konzept neuartiger Speicherelemente, für das diese Arbeit eine wichtige Grundlage bildet, ist notwendig, um weitere Verbesserungen zu entwickeln.:1 Introduction 1 2 Fundamentals of organic semiconductors 5 2.1 Electronic states of a molecule 5 2.1.1 Atomic orbitals and molecular orbitals 5 2.1.2 Solid states 9 2.1.3 Singlet and triplet states 12 2.2 Charge transport 13 2.2.1 Charge carrier mobility 13 2.2.2 Charge carrier transport 14 2.3 Charge injection 17 2.3.1 Current limitation 17 2.3.2 Charge injection mechanisms 20 2.4 Doping 22 3 Organic junctions and devices 25 3.1 Metal-semiconductor junction 25 3.1.1 Schottky junction 25 3.1.2 Surface states 27 3.2 Metal-oxide-semiconductor capacitor 29 3.3 Junctions and diodes 31 3.3.1 PN junction and diode 31 3.3.2 PIN junction and diode 32 4 Organic non-volatile memory devices 35 4.1 Basic concepts 35 4.2 Organic resistive memory devices 37 4.2.1 Device architecture and switching behavior 38 4.2.2 Working mechanisms 38 4.3 Organic transistor-based memory devices 41 4.3.1 Organic field-effect transistor and memory devices based thereon 41 4.3.2 Floating gate memory 43 4.3.3 Charge trapping memory 45 4.4 Organic ferroelectric memory devices 46 4.4.1 Ferroelectric capacitor memory 47 4.4.2 Ferroelectric transistor memory 48 4.4.3 Ferroelectric diode memory 49 5 Experimental methods 53 5.1 Device fabrication 53 5.2 Device characterization 55 5.3 Materials 57 6 Lateral current flow in semiconductor devices having crossbar electrodes 61 6.1 Introduction 61 6.2 Device architecture 62 6.3 Characteristics comparison between unstructured and structured devices 63 6.3.1 Charging measurement 63 6.3.2 Current-voltage characteristics 64 6.3.3 Capacitance-frequency characteristics 67 6.4 Influence of conductivity of doped layers 69 6.4.1 Dependence on doped layers thickness 69 6.4.2 Dependence on temperature 73 6.5 Lateral charging simulation 74 6.5.1 Analytical description 74 6.5.2 RC circuit simulation 76 6.5.3 Parameters for doped layers gained by simulation 79 6.6 Pseudo trap analysis 81 6.6.1 The pseudo trap density of states determination 81 6.6.2 The pseudo trap analysis under simulated identical conditions 84 6.7 Summary 85 7 The pinMOS memory: novel diode-capacitor memory with multiple-bit storage 87 7.1 Introduction 87 7.2 Device architecture 88 7.2.1 Dependence on layout and pixel 89 7.2.2 Fundamental memory behavior characterization 93 7.3 Working mechanism 96 7.3.1 Working mechanism of quasi-steady states 97 7.3.2 Working mechanism of dynamic states 101 7.4 Tunability of the memory effect 105 7.4.1 Operation parameters 106 7.4.2 Photoinduced tunability 108 7.4.3 Intrinsic layer thickness 110 7.5 Potential in neuromorphic computing application 111 7.5.1 Extracting capacitance at 0 V sequentially 112 7.5.2 Mimicking the long-term plasticity (LTP) behavior 113 7.6 Summary 114 8 Optoelectronic properties of pinMOS memory 117 8.1 Introduction 117 8.2 Measurement setup 117 8.3 pinMOS memory emission intensity 118 8.4 Pulse characteristics and device brightness 119 8.5 Conclusion 124 9 Conclusion 125 Bibliography 129 List of Figures 145 List of Tables 151 List of Abbreviations 153 Publications and Conference 157 Acknowledgment 15

Introducing pinMOS Memory: A Novel, Nonvolatile Organic Memory Device

In recent decades, organic memory devices have been researched intensely and they can, among other application scenarios, play an important role in the vision of an internet of things. Most studies concentrate on storing charges in electronic traps or nanoparticles while memory types where the information is stored in the local charge up of an integrated capacitance and presented by capacitance received far less attention. Here, a new type of programmable organic capacitive memory called p‐i‐n‐metal‐oxide‐semiconductor (pinMOS) memory is demonstrated with the possibility to store multiple states. Another attractive property is that this simple, diode‐based pinMOS memory can be written as well as read electrically and optically. The pinMOS memory device shows excellent repeatability, an endurance of more than 104 write‐read‐erase‐read cycles, and currently already over 24 h retention time. The working mechanism of the pinMOS memory under dynamic and steady‐state operations is investigated to identify further optimization steps. The results reveal that the pinMOS memory principle is promising as a reliable capacitive memory device for future applications in electronic and photonic circuits like in neuromorphic computing or visual memory systems

Metabolomic Study on the Preventive Effect of Patrinia scabiosaefolia Fisch on Multipathogen Induced Pelvic Inflammatory Disease in Rats

Patrinia scabiosaefolia Fisch (PSF), a well-known traditional Chinese medicine (TCM), has been used as a “heat-clearing and detoxifying” agent. The present study was to illustrate the preventive effect of PSF on pelvic inflammatory disease (PID) in rats. The PID model was constructed by multipathogen infection of the upper genital tract with reference to the method previously reported. Urine metabolomic analysis was conducted with a GC-MS coupled with derivatization method. In this study, PID rats showed obvious infiltration of inflammatory cells and elevated expression of cytokines (IL-1β and IL-6) in upper genital tract, compared with control rats. Sixteen differentiating metabolites contributed to the alteration of metabolic profile in PID rats, including two amino acids, three fat acids, nine organic acids, and two types of sugars. The rats, infected by multipathogen and administered with PSF, showed decreased infiltration of inflammatory cells and lowered expression of cytokines in upper genital tract, compared with PID rats. Meanwhile, PSF intervened in the PID-associated alterations in TCA cycle, sugar metabolism, amino acid metabolism, and other uncertain metabolic pathways. These results indicate that PSF has preventive effect on multipathogen induced PID and holistic interventional effect on disease-associated metabolomic change

Booster vaccination is required to elicit and maintain COVID-19 vaccine-induced immunity in SIV-infected macaques

ABSTRACTProlonged infection and possible evolution of SARS-CoV-2 in patients living with uncontrolled HIV-1 infection highlight the importance of an effective vaccination regimen, yet the immunogenicity of COVID-19 vaccines and predictive immune biomarkers have not been well investigated. Herein, we report that the magnitude and persistence of antibody and cell-mediated immunity (CMI) elicited by an Ad5-vectored COVID-19 vaccine are impaired in SIV-infected macaques with high viral loads (> 105 genome copies per ml plasma, SIVhi) but not in macaques with low viral loads (< 105, SIVlow). After a second vaccination, the immune responses are robustly enhanced in all uninfected and SIVlow macaques. These responses also show a moderate increase in 70% SIVhi macaques but decline sharply soon after. Further analysis reveals that decreased antibody and CMI responses are associated with reduced circulating follicular helper T cell (TFH) counts and aberrant CD4/CD8 ratios, respectively, indicating that dysregulation of CD4+ T cells by SIV infection impairs the COVID-19 vaccine-induced immunity. Ad5-vectored COVID-19 vaccine shows no impact on SIV loads or SIV-specific CMI responses. Our study underscores the necessity of frequent booster vaccinations in HIV-infected patients and provides indicative biomarkers for predicting vaccination effectiveness in these patients

Universal growth of perovskite thin monocrystals from high solute flux for sensitive self-driven X-ray detection

Abstract Metal-halide perovskite thin monocrystals featuring efficient carrier collection and transport capabilities are well suited for radiation detectors, yet their growth in a generic, well-controlled manner remains challenging. Here, we reveal that mass transfer is one major limiting factor during solution growth of perovskite thin monocrystals. A general approach is developed to overcome synthetic limitation by using a high solute flux system, in which mass diffusion coefficient is improved from 1.7×10–10 to 5.4×10–10 m2 s–1 by suppressing monomer aggregation. The generality of this approach is validated by the synthesis of 29 types of perovskite thin monocrystals at 40–90 °C with the growth velocity up to 27.2 μm min–1. The as-grown perovskite monocrystals deliver a high X-ray sensitivity of 1.74×105 µC Gy−1 cm−2 without applied bias. The findings regarding limited mass transfer and high-flux crystallization are crucial towards advancing the preparation and application of perovskite thin monocrystals