72 research outputs found
Аналіз впливу роботи пристроїв контактної зварки на параметри напруги мережі
Get PDFThree fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 degrees C to 500 degrees C. The three BGVRs are functional and exhibit 46 ppm/degrees C, 131 ppm/degrees C, and 120 ppm/degrees C output voltage variations from 25 degrees C up to 500 degrees C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.QC 20160311HOTSi
Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC
Full text linkInfluence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs
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