Explaining Violation Traces with Finite State Natural Language Generation Models

An essential element of any verification technique is that of identifying and communicating to the user, system behaviour which leads to a deviation from the expected behaviour. Such behaviours are typically made available as long traces of system actions which would benefit from a natural language explanation of the trace and especially in the context of business logic level specifications. In this paper we present a natural language generation model which can be used to explain such traces. A key idea is that the explanation language is a CNL that is, formally speaking, regular language susceptible transformations that can be expressed with finite state machinery. At the same time it admits various forms of abstraction and simplification which contribute to the naturalness of explanations that are communicated to the user

Accurate evaluation of the interstitial KKR-Green function

It is shown that the Brillouin zone integral for the interstitial KKR-Green function can be evaluated accurately by taking proper care of the free-electron singularities in the integrand. The proposed method combines two recently developed methods, a supermatrix method and a subtraction method. This combination appears to provide a major improvement compared with an earlier proposal based on the subtraction method only. By this the barrier preventing the study of important interstitial-like defects, such as an electromigrating atom halfway along its jump path, can be considered as being razed.Comment: 23 pages, RevTe

Modeling Lepton-Nucleon Inelastic Scattering from High to Low Momentum Transfer

We present a model for inclusive charged lepton-nucleon and (anti)neutrino-nucleon cross sections at momentum transfer squared, $Q^2$, $\sim1 {\rm GeV}^2$. We quantify the impact of existing low-Q charged-lepton deep-inelastic scattering (DIS) data on effects due to high-twist operators and on the extraction of parton distribution functions (PDFs). No evidence is found for twist-6 contributions to structure functions (SF), and for a twist-4 term in the logitudinal SF at $x\gtrsim0.1$. We find that DIS data are consistent with the NNLO QCD approximation with the target mass and phenomenological high twist corrections. For $Q^2<1 {\rm GeV}^2$, we extend extrapolation of the operator product expansion, preserving the low-$Q$ current-conservation theorems. The procedure yields a good description of data down to $Q^2\sim 0.5 {\rm GeV}^2$. An updated set of PDFs with reduced uncertainty and applicable down to small momentum transfers in the lepton-nucleon scattering is obtained.Comment: 10 pages, 6 figures, proceedings of the 5th International Workshop on Neutrino-Nucleus Interactions in the Few-GeV Region (NuInt07), Batavia, Illinois, 30 May - 3 Jun 200

Field-induced structural aging in glasses at ultra low temperatures

In non-equilibrium experiments on the glasses Mylar and BK7, we measured the excess dielectric response after the temporary application of a strong electric bias field at mK--temperatures. A model recently developed describes the observed long time decays qualitatively for Mylar [PRL 90, 105501, S. Ludwig, P. Nalbach, D. Rosenberg, D. Osheroff], but fails for BK7. In contrast, our results on both samples can be described by including an additional mechanism to the mentioned model with temperature independent decay times of the excess dielectric response. As the origin of this novel process beyond the "tunneling model" we suggest bias field induced structural rearrangements of "tunneling states" that decay by quantum mechanical tunneling.Comment: 4 pages, 4 figures, accepted at PRL, corrected typos in version

Simultaneous measurement of the phase noise on all optical modes of a mode-locked laser

We propose and experimentally demonstrate a method to simultaneously measure the relative phase noise of all modes of two mode-locked lasers. The method is based on the numerical analysis of a beat note of two lasers with slightly different pulse repetition rates. We carefully analyze and experimentally demonstrate the potential of this method. Compared to other methods, it has the unique advantage that it provides access to correlations of the phases of different mode

Charge injection instability in perfect insulators

We show that in a macroscopic perfect insulator, charge injection at a field-enhancing defect is associated with an instability of the insulating state or with bistability of the insulating and the charged state. The effect of a nonlinear carrier mobility is emphasized. The formation of the charged state is governed by two different processes with clearly separated time scales. First, due to a fast growth of a charge-injection mode, a localized charge cloud forms near the injecting defect (or contact). Charge injection stops when the field enhancement is screened below criticality. Secondly, the charge slowly redistributes in the bulk. The linear instability mechanism and the final charged steady state are discussed for a simple model and for cylindrical and spherical geometries. The theory explains an experimentally observed increase of the critical electric field with decreasing size of the injecting contact. Numerical results are presented for dc and ac biased insulators.Comment: Revtex, 7pages, 4 ps figure

Vacancy complexes with oversized impurities in Si and Ge

In this paper we examine the electronic and geometrical structure of impurity-vacancy complexes in Si and Ge. Already Watkins suggested that in Si the pairing of Sn with the vacancy produces a complex with the Sn-atom at the bond center and the vacancy split into two half vacancies on the neighboring sites. Within the framework of density-functional theory we use two complementary ab initio methods, the pseudopotential plane wave (PPW) method and the all-electron Kohn-Korringa-Rostoker (KKR) method, to investigate the structure of vacancy complexes with 11 different sp-impurities. For the case of Sn in Si, we confirm the split configuration and obtain good agreement with EPR data of Watkins. In general we find that all impurities of the 5sp and 6sp series in Si and Ge prefer the split-vacancy configuration, with an energy gain of 0.5 to 1 eV compared to the substitutional complex. On the other hand, impurities of the 3sp and 4sp series form a (slightly distorted) substitutional complex. Al impurities show an exception from this rule, forming a split complex in Si and a strongly distorted substitutional complex in Ge. We find a strong correlation of these data with the size of the isolated impurities, being defined via the lattice relaxations of the nearest neighbors.Comment: 8 pages, 4 bw figure

Optical phase noise and carrier-envelope offset noise of mode-locked lasers

The timing jitter, optical phase noise, and carrier-envelope offset (CEO) noise of passively mode-locked lasers are closely related. New key results concern analytical calculations of the quantum noise limits for optical phase noise and CEO noise. Earlier results for the optical phase noise of actively mode-locked lasers are generalized, particularly for application to passively mode-locked lasers. It is found, for example, that mode locking with slow absorbers can lead to optical linewidths far above the Schawlow-Townes limit. Furthermore, mode-locked lasers can at the same time have nearly quantum-limited timing jitter and a strong optical excess phase noise. A feedback timing stabilization via cavity length control can, depending on the situation, reduce or greatly increase the optical phase noise, while not affecting the CEO noise. Besides presenting such findings, the paper also tries to clarify some basic aspects of phase noise in mode-locked laser