Novel industrial laser etching technics for sensors miniaturization applied to biomedical: a comparison of simulation and experimental approach

International audienceAn increase of industrial needs for micro-ablation and surface structuration using sub-picosecond laser working at high repetition rate is required. In this context, new industrial lasers were recently commercialized for such a type of purpose. The potential of a new industrial femtosecond laser source (Tangerine model from Amplitude Système) is investigated in this work for different etching purposes. Our experimental results will be also compared to those obtained when using Ti:Sa laser source, with the help of numerical simulations

UV and IR laser induced ablation of Al2O3/SiN:H and a-Si:H/SiN:H

Experimental work on laser induced ablation of thin Al2O3(20 nm)/SiN:H (70 nm) and a-Si:H (20 nm)/SiN:H (70 nm) stacks acting, respectively, as p-type and n-type silicon surface passivation layers is reported. Results obtained using two different laser sources are compared. The stacks are efficiently removed using a femtosecond infra-red laser (1030 nm wavelength, 300 fs pulse duration) but the underlying silicon surface is highly damaged in a ripple-like pattern. This collateral effect is almost completely avoided using a nanosecond ultra-violet laser (248 nm wavelength, 50 ns pulse duration), however a-Si:H flakes and Al2O3 lace remain after ablation process