Assessment of the conservation status of natural and semi-natural patches associated with urban areas through habitat suitability indices

Urban environments rely on the surrounding natural ecosystems remnants as providers of ecosystem functions, therefore these areas not only support a unique biodiversity but also have a social value for maintaining public health and wellbeing. For this reason, urbanization is considered to be one the biggest threats to ecosystems, leading to native biodiversity simplification and, thus, to a detriment of the provided ecosystem services. Moreover, this change in land use results in high levels of landscape fragmentation and modification in areas surrounding the habitat remnants which, in consequence, become inadequate for many native species. In this context, it is important that urban planners have the information to assess the possible consequences of future changes in land use in order to increase the landscape chances of supporting both, native biodiversity and the needs of a growing human population. The objective of the present work is to evaluate the ecological integrity of natural and semi-natural vegetation patches immersed in an urban area in order to generate a conceptual framework for landscape assessment that allows urban planners to envision the best choice for city development at a given place. To do so, we developed a quantitative integral environmental evaluation index that includes ecological characterization, geological characterization, and environmental characterization (presence of anthropic disturbance) of the assessed area. We conclude that the index we have generated in this work is suitable to be used as a management tool to allow an unbiased valuation and to identify managing situations that require a short term response.Fil: Natale, Evangelina Sandra. Fundación Conservación y Desarrollo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Villalba, G.. Fundación Conservación y Desarrollo; ArgentinaFil: Junquera, J. E.. Fundación Conservación y Desarrollo; ArgentinaFil: Zalba, Sergio Martín. Universidad Nacional del Sur. Departamento de Biología, Bioquímica y Farmacia. Grupo de Estudios en Conservación y Manejo; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentin

Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots

We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetically-induced quenching to single donors in the quantum dot is achieved at about 40 T.Comment: accepted for publication at Current Applied Physic

Electric-field tuning of the valley splitting in silicon corner dots

We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between a single quantum dot and a double quantum dot in parallel that allows tuning the device in to corner dot formation. We find a linear dependence of the valley splitting on back-gate voltage, from $880~\mu \text{eV}$ to $610~\mu \text{eV}$ with a slope of $-45\pm 3~\mu \text{eV/V}$ (or equivalently a slope of $-48\pm 3~\mu \text{eV/(MV/m)}$ with respect to the effective field). The experimental results are backed up by tight-binding simulations that include the effect of surface roughness, remote charges in the gate stack and discrete dopants in the channel. Our results demonstrate a way to electrically tune the valley splitting in silicon-on-insulator-based quantum dots, a requirement to achieve all-electrical manipulation of silicon spin qubits.Comment: 5 pages, 3 figures. In this version: Discussion of model expanded; Fig. 3 updated; Refs. added (15, 22, 32, 34, 35, 36, 37

A silicon-based single-electron interferometer coupled to a fermionic sea

We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multi-passage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realised, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realised within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogues of optical interferometry within a CMOS transistor

Charge dynamics and spin blockade in a hybrid double quantum dot in silicon

Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility with the microelectronics industry. While donor electron spins in silicon provide extremely long coherence times and access to the nuclear spin via the hyperfine interaction, quantum dots have the complementary advantages of fast electrical operations, tunability and scalability. Here we present an approach to a novel hybrid double quantum dot by coupling a donor to a lithographically patterned artificial atom. Using gate-based rf reflectometry, we probe the charge stability of this double quantum dot system and the variation of quantum capacitance at the interdot charge transition. Using microwave spectroscopy, we find a tunnel coupling of 2.7 GHz and characterise the charge dynamics, which reveals a charge T2* of 200 ps and a relaxation time T1 of 100 ns. Additionally, we demonstrate spin blockade at the inderdot transition, opening up the possibility to operate this coupled system as a singlet-triplet qubit or to transfer a coherent spin state between the quantum dot and the donor electron and nucleus.Comment: 6 pages, 4 figures, supplementary information (3 pages, 4 figures

Reconfigurable quadruple quantum dots in a silicon nanowire transistor

We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture