Impact of Salicide and Source/Drain Implants on Leakage Current and Sheet Resistance in 45nm NMOS Device

In this paper, we investigate the impact of Source/Drain (S/D) implant and salicide on poly sheet resistance (RS) and leakage current (I Leak ) in 45nm NMOS device performance. The experimental studies were conducted under varying four process parameters, namely Halo implant, Source/Drain Implant, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the RS and I Leak were determined by using analysis of variance (ANOVA). The fabrication of the devices was performed by using fabrication simulator of ATHENA. The electrical characterization of the device was implemented by using electrical characterization simulator of ATLAS. These two simulators were combined with Taguchi method to aid in design and optimizing the process parameters. The optimum process parameter combination was obtained by using the analysis of signal-tonoise (S/N) ratio. In this research, the most effective process parameters with respect to poly sheet resistance and leakage current are silicide anneal temperature (88%) and S/D implant (62%) respectively. Whereas the second ranking factor affecting the poly sheet resistance and leakage current are S/D implant (12%) and silicide anneal temperature (20%) respectively. As conclusions, S/D implant and silicide annealtemperature have the strongest effect on the response characteristics. The results show that the R S and I Leak after optimizations approaches are 42.28□□ and 0.1186mA/□m respectivel

Distributional Fit of Carbon Monoxide Data

Air pollution is a problem that concerns many of us all over the world and it is a negative side effect of industrial development. Air pollution from cars and factories, in conjunction with a very humid climate, produce a highly corrosive environment. Land transportation provide a significant contribution to half of the total emission of PM 2.5, CO, HC and NOx, where air pollution levels have been exceeded or almost exceeded the ambient air quality standard. This study determine the distributional fit of carbon monoxide (CO) data obtained from Solar Energy Research Institute (SERI), Universiti Kebangsaan Malaysia, Bangi from 16 September 2008 to 16 January 2009. The distribution models used in this study were exponential, gamma, generalized extreme value, lognormal and Weibull distributions. Parameters for all distribution models were estimated by using maximum likelihood method. The goodness of fit of the models were determined by using Kolmogorov-Smirnov and Anderson Darling statistics. The lognormal distribution model was found to fit better than other distribution models. Key-Words: - Statistical distribution models, air pollution, maximum likelihood method, goodness of fit tests

Optimization of HALO structure effects in 45nm p-type MOSFETs device using Taguchi Method

In this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/μm

Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current

The objective of this paper is to optimize the process parameters of 32-nm CMOS process to get minimum leakage current. Four process parameters were chosen, namely: (i) source-drain implantation, (ii) source-drain compensation implantation, (iii) halo implantation time, and (iv) silicide annealing time. The Taguchi method technique was used to design the experiment. Two noise factors were used that consist of four measurements for each row of experiment in the L9 array, thus leading to a set of experiments consisting of 36 runs. The simulator of ATHENA and ATLAS were used for MOSFET fabrication process and electrical characterization, respectively. The results clearly show that the compensation implantation (46%) has the most dominant impact on the resulting leakage current in NMOS device, whereas source-drain (S/D) implantation was the second ranking factor (35%). The percent effects on signal-to-noise ratio (SNR) of silicide annealing temperature and halo implantation are much lower being 12% and 7%, respectively. For the PMOS device, halo implantation was defined as an adjustment factor because of its minimal effect on SNR and highest on the means (43%). Halo implantation doping as the optimum solution for fabricating the 32-nm NMOS transistor is 2.38×10¹³atom/cm³. As conclusion, this experiment proves that the Taguchi analysis can be effectively used in finding the optimum solution in producing 32-nm CMOS transistor with acceptable leakage current, well within International Technology Roadmap for Semiconductor (ITRS) prediction

Route to becoming a member of evaluation panel for the engineering accreditation council (EAC) of Malaysia

Accreditation of Engineering programmes in Malaysia is currently undergoing major changes, which was brought about by the criteria set by the Washington Accord. This paper discusses the training programmes that need to be implemented for panel evaluators

Kajian kualiti air tasik kejuruteraan UKM ke arah mewujudkan kampus lestari dan mesra alam

Universiti Kebangsaan Malaysia is working towards the establishment of “Sustainable and Environmental Friendly Campus”. The management of water bodies promotes the coordinated development and management of water, land and related resources, in order to maximise the benefit in term of economic and social welfare in an equitable manner without compromising the sustainability of vital ecosystems. A study on the water quality of Tasik Kejuruteraan of the UKM Bangi campus was carried out to determine the water quality, Water Quality Index (WQI) and its classification according to Interim National Water Quality Standard (INWQS). The purpose of this study was to identify the sources of the water pollution and level of pollution at the lake. The effect of dry and rainy days on the water quality was also evaluated. Parameters selected were pH, temperature, dissolved oxygen (DO), conductivity, turbidity, total suspended solids (TSS), biochemical oxygen demand (BOD), chemical oxygen demand (COD), ammoniacal-nitrogen, lead and cadmium. Temperature, pH, conductivity, dissolved oxygen and turbidity were measured in-situ by using calibrated meters. Heavy metal concentrations were determined by using Atomic Absorption Spectrophotometry (AAS). Methods of sampling and water analyses were performed according to recommendations outlined by the American Public Health Association (APHA). On normal days, the average inflow and outfow of the lake were 0.057 m3s-1 and 0.052 m3s-1 respectively. The theoretical retention time of the lake with mean depth of 1.5 m and an area of 18,000 m2 was 62.5 days. All sampling stations were categorized as Class II i.e. good water quality except station S2, which was categorized as Class III or slightly pollute

Improvement on the innovational outlier detection procedure in a bilinear model

This paper considers the problem of outlier detection in bilinear time series data with special focus on BL(1,0,1,1) and BL(1,1,1,1) models. In the previous study, the formulations of effect of innovational outlier on the observations and residuals from the process had been developed and the corresponding least squares estimator of outlier effect had been derived. Consequently, an outlier detection procedure employing bootstrap-based procedure to estimate the variance of the estimator had been proposed. In this paper, we proposed to use the mean absolute deviance and trimmed mean formula to estimate the variance to improve the performances of the procedure. Via simulation, we showed that the procedure based on the trimmed mean formula has successfully improved the performance of the procedure

Location determination using radio frequency RSSI and deterministic algorithm

In this study, we propose a simple procedure for obtaining estimate of the concentration parameter of the von Mises distribution for the simultaneous circular functional relationship model. Currently, the concentration parameter for this model can only be estimate by assuming the ratio of the error concentration parameter lambda(j) is equal to one. This new proposed method can be applied for any value of lambda based on the expansion of the asymptotic power series of the modified Bessel function. Finally, the simulation study has been carried out to verify the accuracy of the new proposed procedure