Time resolved and temperature dependence of the radiative properties of thiol-capped CdS nanoparticles films

In this work, we present the temperature-dependence and time-resolved photoluminescence (PL) of CdS nanoparticles capped independently with three different ligands thiophenol, thioglycerol, and l-cysteine over a broad temperature range from 10 to 300 K. The respective nanoparticles sizes in the three systems studied in this work are 1.5, 4, and 2 nm as determined from X-ray diffraction (XRD). From the analysis of AFM images, it was found that the lateral particle sizes of capped CdS nanoparticles are greater than those deduced from XRD or optical absorption measurements. The aim of this study is the investigation of the impact of the organic ligands on the radiative recombination dynamics in organically capped CdS nanoparticles. From the PL study and based on the temperature-dependence and time-resolved emission spectroscopy, we conclude that the emission of CdS QDs film originates from recombination of the delocalized carriers in the internal core states with a small contribution of the localized carriers at the interface. The PL decay reveals a biexponential behavior for the entire three samples at all temperatures. One of the two exponential components decays rapidly with a time τ(1) in the range 0.5–0.8 ns, whereas the other decays much more slowly, with a time τ(2) in the range 1–3 ns. The weak activation energy (32–37 meV) deduced from the temperature dependence of the PL intensity suggests the involvement of shallow traps. The analysis of the experimental results reveals a relatively narrow size distribution, an efficient surface passivation, and a satisfactory thermal stability of CdS nanocrystals

Effect of CdS nanocrystals on the photoluminescence of Eu3+-doped silicophosphate sol gel glass

In this work, we investigate the effect of co-doping with CdS nanoparticles on the photoluminescence properties of Eu3+ doped silicophosphate glass prepared via the sol gel method. Infrared spectroscopy (FTIR) revealed the insertion of phosphorus within the silicate network. XRD and TEM analyses revealed the presence of CdS nanoparticles dispersed in the glass matrix. Based on the optical study and the effective mass theory for spherical quantum dots, it was found that CdS nanocrystals have a gap of nearly 3.53 eV and a size of 2.42 nm. The enhancement of Eu3+ emission induced by CdS nanocrystals and thermal annealing was assigned to either an energy transfer via defect states or structural alteration of the glass network around the rare earth ions

Photoluminescence and time-resolved photoluminescence studies of lateral carriers transfer among InAs/GaAs quantum dots

International audienceWe report on the lateral transfer and thermal escape of carriers in InAs quantum dots (QDs) grown on a GaAs substrate by solid source molecular beam epitaxy by mean of photoluminescence (PL) and time-resolved PL measurements. The temperature-dependent PL spectra are discussed in terms of the inhomogeneous size distribution of the QDs and the carrier tunneling process from small to large QDs. The dependence of the photoluminescence decay time on the emission-wavelength is attributed to lateral carriers’ transfer within QDs with an interdot carrier tunneling time of 910 ps under low excitation conditions

Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots

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Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing

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Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots

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