Theoretical Simulations on Electric Properties of CNT-Me and GNR-Me Interconnects Using Effective Media Approach

Abstract To overcome disadvantages of nowadays microtechnology, a further miniaturization of electronic devices, high integration level as well as increase of both operation frequencies and power density is required, including the use of adequate materials and innovative chip interconnects. Due to their unique physical properties, especially due to a ballistic (without losses) mechanism of conductivity, carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) attract a permanently growing technological interest, for example, as promising candidates for nanointerconnects in a high-speed electronics

Structural and electronic properties of single-walled AlN nanotubes of different chiralities and sizes

Four models of single-walled AlN nanotubes (NTs), which possess (i) two different chiralities (armchair or zigzag type) and (ii) two different uniform diameters for both types of NTs (1 or 6 nm) have been constructed, in order to analyse the dependence of their properties on both morphology and thickness. Periodic one-dimensional (1D) DFT calculations performed on these models have allowed us to analyse how the chirality and curvature of the NT change its properties as compared to both AlN bulk with either wurtzite or zinc-blende structures and their densely packed surfaces. We have found that the larger the diameter of the AlN NT, the smaller the width of its bandgap, the strengths of its bonds and the charge separations in them .T his confirms the recent experimental finding of the possibility to adjust electronic properties in ultimate nanoscale optoelectronic devices produced from AlN and other group III nitrides. (Some figures in this article are in colour only in the electronic version

Transition levels of acceptor impurities in ZnO crystals by DFT-LCAO calculations

This research was partly supported by the Kazakhstan Science Project № AP05134367«Synthesis of nanocrystals in track templates of SiO2/Si for sensory, nano-and optoelectronic applications» and Latvian Super Cluster (LASC), installed in the Institute of Solid State Physics (ISSP) of the University of Latvia. Authors are indebted to D. Gryaznov, A. Popov and A. Dauletbekova for stimulating discussions.Large scale ab-initio calculations are carried out to study the charge state transition levels of nitrogen and phosphorus impurity defects in zinc oxide crystals using the DFT-LCAO approximation as implemented into the CRYSTAL computer code. It is shown that at a high concentration of defects (close location of defects) their formation energy is underestimated due to a significant delocalization of the charge within the supercell. After inclusion the energy offset correction and defect-defective interaction, the formation energy is improved, in a comparison with that calculated in a large supercell. The optical transition levels obtained by a direct calculation confirm the experimental observation: nitrogen and phosphorus impurities are deep acceptor centers with large formation energy in a charged state and, therefore, cannot serve as the effective source of hole charge. The obtained results are in good agreement with the previous theoretical work, in which other calculation methods were used, and are capable of qualitatively describing the energy characteristics of the charged defects.University of Latvia; Institute of Solid State Physics, Chinese Academy of Sciences; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

First principles calculations of the atomic and electronic structure of F centers in bulk and on the (001) surface of SrTiO3

The atomic and electronic structure, formation energy, and the energy barriers for migration have been calculated for the neutral O vacancy point defect F center in cubic SrTiO3 employing various implementations of density functional theory DFT. Both bulk and TiO2-terminated 001 surface F centers have been considered. Supercells of different shapes containing up to 320 atoms have been employed. The limit of an isolated single oxygen vacancy in the bulk corresponds to a 270-atom supercell, in contrast to commonly used supercells containing 40–80 atoms. Calculations carried out with the hybrid B3PW functional show that the F center level approaches the conduction band bottom to within 0.5 eV, as the supercell size increases up to 320 atoms. The analysis of the electronic density maps indicates, however, that this remains a small-radius center with the two electrons left by the missing O ion being redistributed mainly between the vacancy and the 3d z2 atomic orbitals of the two nearest Ti ions. As for the dynamical properties, the calculated migration energy barrier in the low oxygen depletion regime is predicted to be 0.4 eV. In contrast, the surface F center exhibits a more delocalized character, which leads to significantly reduced ionization and migration energies. Results obtained are compared with available experimental data

Leptonic Decays of the W-Boson in a Strong Electromagnetic Field

The probability of W-boson decay into a lepton and a neutrino in a strong electromagnetic field is calculated. On the basis of the method for deriving exact solutions to relativistic wave equations for charged particles, an exact analytic expression is obtained for the partial W-decay width at an arbitrary value of the external field strength. It is found that, in the region of comparatively weak fields, field-induced corrections to the standard decay width of the W-boson in a vacuum are about a few percent. In these conditions at first we observe the decrease of the W-boson partial decay width with the increase of the external field strength parameter. At absolute minimum the W-width deviates from the corresponding vacuum value by a factor 0,926. Then with further augmentation of the background field intensity the W-boson decay width grows monotonously. In superstrong fields the partial W-width is greater than the corresponding one in vacuum in a dozen of times.Comment: LaTex file, 19 pages, 2 Postscript figur

Theory of bound polarons in oxide compounds

We present a multilateral theoretical study of bound polarons in oxide compounds MgO and \alpha-Al_2O_3 (corundum). A continuum theory at arbitrary electron-phonon coupling is used for calculation of the energies of thermal dissociation, photoionization (optically induced release of an electron (hole) from the ground self-consistent state), as well as optical absorption to the non-relaxed excited states. Unlike the case of free strong-coupling polarons, where the ratio \kappa of the photoionization energy to the thermal dissociation energy was shown to be always equal to 3, here this ratio depends on the Froehlich coupling constant \alpha and the screened Coulomb interaction strength \beta. Reasonable variation of these two parameters has demonstrated that the magnitude of \kappa remains usually in the narrow interval from 1 to 2.5. This is in agreement with atomistic calculations and experimental data for hole O^- polarons bound to the cation vacancy in MgO. The thermal dissociation energy for the ground self-consistent state and the energy of the optically induced charge transfer process (hops of a hole between O^{2-} ions) have been calculated using the quantum-chemical method INDO. Results obtained within the two approaches for hole O$^-$ polarons bound by the cation vacancies (V^-) in MgO and by the Mg^{2+} impurity (V_{Mg}) in corundum are compared to experimental data and to each other. We discuss a surprising closeness of the results obtained on the basis of independent models and their agreement with experiment.Comment: 13 pages, 2 figures, 2 tables, E-mail addresses: [email protected], [email protected]

A First-Principles Study of the Ag/a-Al2O3(0001) Interface

Ab initio simulations of the Ag/a-Al2O3(0001) interface have been performed for periodic slab models. We have considered Al- and O-terminated corundum surfaces, low and high substrate coverages by silver, as well as the two preferred Ag adsorption sites. The two different terminations give rise to qualitatively different results: silver physisorption on the Al-terminated substrate and chemisorption on O-terminated one. The latter could be treated as a possible model for the defective Al-terminated substrate, where the outermost aluminium ions are removed (completely or partly). This makes O-terminated surface highly reactive towards a deposited metal, in order to restore initial corundum stoichiometry

This content has been downloaded from IOPscience. Please scroll down to see the full text. Hydrogen adsorption on the ZnO surface: ab initio hybrid density functional linear combination of atomic orbitals calculations Hydrogen adsorption on the ZnO ( ) su

Abstract Hydrogen atoms unavoidably presented in ZnO samples or thin films during their synthesis considerably affect electrical conductivity. Results of first principles hybrid functional linear combination of atomic orbitals calculations are discussed for hydrogen atoms incorporated in bulk or adsorbed upon non-polar ZnO (1100) surfaces. The energy of H incorporation, atomic relaxation, electronic density redistribution and modification of the electronic structure are compared for both surface adsorption and bulk absorption. It is shown that hydrogen forms a strong bonding with the surface O ions (E ads = 2.7 eV) whereas its incorporation into bulk is energetically quite unfavorable. Hydrogen adsorption reduces the surface energy. Surface hydrogen atoms are very shallow donors, thus contributing to the electronic conductivity and ZnO metallization