Picosecond carrier dynamics induced by coupling of wavefunctions in a Si-nanodisk array fabricated by neutral beam etching using bio-nano-templates

The picosecond carrier dynamics in a closely packed Si-nanodisk (Si-ND) array with ultrathin potential barrier fabricated by neutral beam etching using bio-nano-templates was investigated by time-resolved photoluminescence (PL). The PL decay curves were analyzed as a function of photon energy by the global fitting method. We show three spectral components with different decay times, where the systematic energy differences of the spectral peaks are clarified: 2.03 eV for the fastest decaying component with a decay time τ = 40 ps, 2.02 eV for τ = 300 ps, and 2.00 eV for τ = 1.6 ns. These energy separations ranging from 10 to 30 meV among the emissive states can be attributed to the coupling of wavefunctions of carriers between neighboring NDs

Picosecond transient photoluminescence in high-density Si-nanodisk arrays fabricated using bio-nano-templates

We study picosecond transient photoluminescence (PL) in Si-nanodisk (Si-ND) arrays fabricated using bio-nano-templates. The PL time profiles show multi-exponential decaying kinetics depending on the disk density. We attribute the fastest decaying component with a decay time of 40 ps observed only in the high-density Si-ND array to the electron transfer among the Si-NDs