Band-to-Band Transitions, Selection Rules, Effective Mass, and Excitonic Contributions in Monoclinic β-Ga2O3

We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β-Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75–9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition

Electron effective mass in Sn-doped monoclinic single crystal β\beta-gallium oxide determined by mid-infrared optical Hall effect

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal $\beta$-Ga$_2$O$_3$ is experimentally determined by mid-infrared optical Hall effect to be $(0.284\pm0.013)m_{0}$ combining investigations on ($010$) and ($\bar{2}01$) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped $\beta$-Ga$_2$O$_3$. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdue-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of $0.267m_{0}$ (arXiv:1704.06711 [cond-mat.mtrl-sci]). Within our uncertainty limits we detect no anisotropy for the electron effective mass, which is consistent with most previous theoretical calculations. We discuss upper limits for possible anisotropy of the electron effective mass parameter from our experimental uncertainty limits, and we compare our findings with recent theoretical results

Anisotropy, Phonon Modes, and Free Charge Carrier Parameters in Monoclinic β-Gallium Oxide Single Crystals

We derive a dielectric function tensor model approach to render the optical response of monoclinic and triclinic symmetry materials with multiple uncoupled infrared and far-infrared active modes. We apply our model approach to monoclinic β-Ga2O3 single-crystal samples. Surfaces cut under different angles from a bulk crystal, (010) and (2̅01), are investigated by generalized spectroscopic ellipsometry within infrared and far-infrared spectral regions. We determine the frequency dependence of 4 independent β-Ga2O3 Cartesian dielectric function tensor elements by matching large sets of experimental data using a point-by-point data inversion approach. From matching our monoclinic model to the obtained 4 dielectric function tensor components, we determine all infrared and far-infrared active transverse optic phonon modes with Au and Bu symmetry, and their eigenvectors within the monoclinic lattice. We find excellent agreement between our model results and results of density functional theory calculations. We derive and discuss the frequencies of longitudinal optical phonons in β-Ga2O3. We derive and report density and anisotropic mobility parameters of the free charge carriers within the tin-doped crystals. We discuss the occurrence of longitudinal phonon plasmon coupled modes in β-Ga2O3 and provide their frequencies and eigenvectors. We also discuss and present monoclinic dielectric constants for static electric fields and frequencies above the reststrahlen range, and we provide a generalization of the Lyddane-Sachs-Teller relation for monoclinic lattices with infrared and far-infrared active modes.We find that the generalized Lyddane-Sachs-Teller relation is fulfilled excellently for β-Ga2O3

Electrochemical Analysis of the Pitting Potential of Tin-plated Copper in Artificial Fresh Water Containing Chloride, Sulfate, and Bicarbonate Ions

Tin-plated copper tubes have been widely used in cold and hot water service systems. However, leakage accidents caused by pitting corrosion can occur in such tubes; therefore, it is necessary to evaluate the effects of major environmental factors on the occurrence of local corrosion to ultimately suppress this corrosion. In the present study, the anodic polarization curves of a tin-coated copper electrode were measured in simulated freshwater containing Cl−, SO42−, and HCO3−. The anodic current increased suddenly and sharply due to the breakdown of the passive layer and the initiation and growth of pitting generation at the pitting potential. The pitting potential shifted to a more negative direction with increasing Cl− and SO42− concentrations. In contrast, the pitting potential shifted to more noble potentials upon increasing the HCO3− concentration, indicating that HCO3− has an inhibitory effect on pitting attack by Cl− and SO42−. The quantitative relationship between each anion concentration and the pitting potential was determined by multiple regression analysis. A plot of the pitting potential predicted from the created regression equation and the measured values of the pitting potential showed a positive linear relationship

Three-dimensional electroanatomical mapping for non-pulmonary vein foci in a patient with complete situs inversus and dextrocardia

In patients with atrial fibrillation (AF) having congenital anatomical abnormalities, such as complete situs inversus and dextrocardia, pulmonary vein isolation (PVI) ablation can be performed safety using a three-dimensional electroanatomical mapping system. However, it is not clear whether a three-dimensional electroanatomical mapping system can be used to detect non-PV ectopic beats initiating AF in patients with complete situs inversus and dextrocardia. Here, we report a 21-year-old man with complete situs inversus and dextrocardia, who showed AF caused by non-PV ectopic beats. We successfully detected the origin of the triggered activity from the non-PV foci using three-dimensional electroanatomical mapping

Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

The influence of the source gas supply sequence prior to growth and the NH3 input partial pressure (PoNH3) on the nucleation of InN islands during the initial stages of hydride vapor phase epitaxy on a nitrided (0001) sapphire substrate was investigated. The crystalline quality of the InN layer after subsequent lateral growth was also examined. When NH3 was flowed prior to growth, single-crystal hexagonal InN islands formed. When InN was grown with a higher PoNH3, the number of InN islands decreased remarkably while their diameter increased. The crystalline quality of InN grown on the hexagonal islands with a high PoNH3 significantly improved with increasing growth time. A strong PL spectrum was observed only from InN layers grown with a high PoNH3. It was thus revealed that an NH3 preflow and a high PoNH3 are effective for producing InN with high crystalline quality and good optical and electrical properties.Funding Agencies|Japan Society for the Promotion Science|23760006|International Training Program||Japan Society for the Promotion of Science||</p

Effect of High NH3 Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

The influence of the source gas supply sequence prior to growth and the NH3 input partial pressure (PoNH3) on the nucleation of InN islands during the initial stages of hydride vapor phase epitaxy on a nitrided (0001) sapphire substrate was investigated. The crystalline quality of the InN layer after subsequent lateral growth was also examined. When NH3 was flowed prior to growth, single-crystal hexagonal InN islands formed. When InN was grown with a higher PoNH3, the number of InN islands decreased remarkably while their diameter increased. The crystalline quality of InN grown on the hexagonal islands with a high PoNH3 significantly improved with increasing growth time. A strong PL spectrum was observed only from InN layers grown with a high PoNH3. It was thus revealed that an NH3 preflow and a high PoNH3 are effective for producing InN with high crystalline quality and good optical and electrical properties.Funding Agencies|Japan Society for the Promotion Science|23760006|International Training Program||Japan Society for the Promotion of Science||</p