Dynamic model for failures in biological systems

A dynamic model for failures in biological organisms is proposed and studied both analytically and numerically. Each cell in the organism becomes dead under sufficiently strong stress, and is then allowed to be healed with some probability. It is found that unlike the case of no healing, the organism in general does not completely break down even in the presence of noise. Revealed is the characteristic time evolution that the system tends to resist the stress longer than the system without healing, followed by sudden breakdown with some fraction of cells surviving. When the noise is weak, the critical stress beyond which the system breaks down increases rapidly as the healing parameter is raised from zero, indicative of the importance of healing in biological systems.Comment: To appear in Europhys. Let

(2,2)-Formalism of General Relativity: An Exact Solution

I discuss the (2,2)-formalism of general relativity based on the (2,2)-fibration of a generic 4-dimensional spacetime of the Lorentzian signature. In this formalism general relativity is describable as a Yang-Mills gauge theory defined on the (1+1)-dimensional base manifold, whose local gauge symmetry is the group of the diffeomorphisms of the 2-dimensional fibre manifold. After presenting the Einstein's field equations in this formalism, I solve them for spherically symmetric case to obtain the Schwarzschild solution. Then I discuss possible applications of this formalism.Comment: 2 figures included, IOP style file neede

Characterization of elastic-plastic properties of AS4/APC-2 thermoplastic composite

Elastic and inelastic properties of AS4/APC-2 composites were characterized with respect to temperature variation by using a one-parameter orthotropic plasticity model and a one parameter failure criterion. Simple uniaxial off-axis tension tests were performed on coupon specimens of unidirectional AS4/APC-2 thermoplastic composite at various temperatures. To avoid the complication caused by the extension-shear coupling effect in off-axis testing, new tabs were designed and used on the test specimens. The experimental results showed that the nonlinear behavior of constitutive relations and the failure strengths can be characterized quite well using the one parameter plasticity model and the failure criterion, respectively

New Hamiltonian formalism and quasi-local conservation equations of general relativity

I describe the Einstein's gravitation of 3+1 dimensional spacetimes using the (2,2) formalism without assuming isometries. In this formalism, quasi-local energy, linear momentum, and angular momentum are identified from the four Einstein's equations of the divergence-type, and are expressed geometrically in terms of the area of a two-surface and a pair of null vector fields on that surface. The associated quasi-local balance equations are spelled out, and the corresponding fluxes are found to assume the canonical form of energy-momentum flux as in standard field theories. The remaining non-divergence-type Einstein's equations turn out to be the Hamilton's equations of motion, which are derivable from the {\it non-vanishing} Hamiltonian by the variational principle. The Hamilton's equations are the evolution equations along the out-going null geodesic whose {\it affine} parameter serves as the time function. In the asymptotic region of asymptotically flat spacetimes, it is shown that the quasi-local quantities reduce to the Bondi energy, linear momentum, and angular momentum, and the corresponding fluxes become the Bondi fluxes. The quasi-local angular momentum turns out to be zero for any two-surface in the flat Minkowski spacetime. I also present a candidate for quasi-local {\it rotational} energy which agrees with the Carter's constant in the asymptotic region of the Kerr spacetime. Finally, a simple relation between energy-flux and angular momentum-flux of a generic gravitational radiation is discussed, whose existence reflects the fact that energy-flux always accompanies angular momentum-flux unless the flux is an s-wave.Comment: 36 pages, 3 figures, RevTex

Statistical variability study of random dopant fluctuation on gate-all-around inversion-mode silicon nanowire field-effect transistors

Random dopant fluctuation effects of gate-all-around inversion-mode silicon nanowire field-effect transistors (FETs) with different diameters and extension lengths are investigated. The nanowire FETs with smaller diameter and longer extension length reduce average values and variations of subthreshold swing and drain-induced barrier lowering, thus improving short channel immunity. Relative variations of the drain currents increase as the diameter decreases because of decreased current drivability from narrower channel cross-sections. Absolute variations of the drain currents decrease critically as the extension length increases due to decreasing the number of arsenic dopants penetrating into the channel region. To understand variability origins of the drain currents, variations of source/drain series resistance and low-field mobility are investigated. All these two parameters affect the variations of the drain currents concurrently. The nanowire FETs having extension lengths sufficient to prevent dopant penetration into the channel regions and maintaining relatively large cross-sections are suggested to achieve suitable short channel immunity and small variations of the drain currents. (C) 2015 AIP Publishing LLC.open111415sciescopu

Variability study of Si nanowire FETs with different junction gradients

Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs) are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).1163Ysciescopu

Polarization Relaxation Induced by Depolarization Field in Ultrathin Ferroelectric BaTiO3_3 Capacitors

Time-dependent polarization relaxation behaviors induced by a depolarization field $E_{d}$ were investigated on high-quality ultrathin SrRuO$_{3}$/BaTiO$_{3}$/SrRuO$_{3}$ capacitors. The $E_d$ values were determined experimentally from an applied external field to stop the net polarization relaxation. These values agree with those from the electrostatic calculations, demonstrating that a large $E_{d}$ inside the ultrathin ferroelectric layer could cause severe polarization relaxation. For numerous ferroelectric devices of capacitor configuration, this effect will set a stricter size limit than the critical thickness issue

Efficient magneto-optical trapping of Yb atoms with a violet laser diode

We report the first efficient trapping of rare-earth Yb atoms with a high-power violet laser diode (LD). An injection-locked violet LD with a 25 mW frequency-stabilized output was used for the magneto-optical trapping (MOT) of fermionic as well as bosonic Yb isotopes. A typical number of $4\times 10^6$ atoms for $^{174}$Yb with a trap density of $\sim 1\times10^8/$cm$^3$ was obtained. A 10 mW violet external-cavity LD (ECLD) was used for the one-dimensional (1D) slowing of an effusive Yb atomic beam without a Zeeman slower resulting in a 35-fold increase in the number of trapped atoms. The overall characteristics of our compact violet MOT, e.g., the loss time of 1 s, the loading time of 400 ms, and the cloud temperature of 0.7 mK, are comparable to those in previously reported violet Yb MOTs, yet with a greatly reduced cost and complexity of the experiment.Comment: 5 pages, 3 figures, 1 table, Phys. Rev. A (to be published

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.Comment: Accepted for publication in Phys. Rev.