13,510 research outputs found

    Some Like It Hot, Some Like It Warm: Phenotyping To Explore Thermotolerance Diversity

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    Plants have evolved overlapping but distinct cellular responses to different aspects of high temperature stress. These responses include basal thermotolerance, short- and long-term acquired thermotolerance, and thermotolerance to moderately high temperatures. This ‘thermotolerance diversity’ means that multiple phenotypic assays are essential for fully describing the functions of genes involved in heat stress responses. A large number of genes with potential roles in heat stress responses have been identified using genetic screens and genome wide expression studies. We examine the range of phenotypic assays that have been used to characterize thermotolerance phenotypes in both Arabidopsis and crop plants. Three major variables differentiate thermotolerance assays: (1) the heat stress regime used, (2) the developmental stage of the plants being studied, and (3) the actual phenotype which is scored. Consideration of these variables will be essential for deepening our understanding of the molecular genetics of plant thermotolerance

    Method of Fabricating Schottky Barrier solar cell

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    On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer

    Schottky barrier solar cell

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    A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer

    Laser action generated within a light pipe: A concept

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    Laser light could be generated within light pipe itself, thereby eliminating coupling losses. Theoretical calculations have shown feasibility of light-pipe laser propagating in circularly-polarized TE mode. It is predicted that fiber-optic distributed-feedback laser would have gain on order of 25 dB

    The dissociation of subjective measures of mental workload and performance

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    Dissociation between performance and subjective workload measures was investigated in the theoretical framework of the multiple resources model. Subjective measures do not preserve the vector characteristics in the multidimensional space described by the model. A theory of dissociation was proposed to locate the sources that may produce dissociation between the two workload measures. According to the theory, performance is affected by every aspect of processing whereas subjective workload is sensitive to the amount of aggregate resource investment and is dominated by the demands on the perceptual/central resources. The proposed theory was tested in three experiments. Results showed that performance improved but subjective workload was elevated with an increasing amount of resource investment. Furthermore, subjective workload was not as sensitive as was performance to differences in the amount of resource competition between two tasks. The demand on perceptual/central resources was found to be the most salient component of subjective workload. Dissociation occurred when the demand on this component was increased by the number of concurrent tasks or by the number of display elements. However, demands on response resources were weighted in subjective introspection as much as demands on perceptual/central resources. The implications of these results for workload practitioners are described

    Data fusion with artificial neural networks (ANN) for classification of earth surface from microwave satellite measurements

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    A data fusion system with artificial neural networks (ANN) is used for fast and accurate classification of five earth surface conditions and surface changes, based on seven SSMI multichannel microwave satellite measurements. The measurements include brightness temperatures at 19, 22, 37, and 85 GHz at both H and V polarizations (only V at 22 GHz). The seven channel measurements are processed through a convolution computation such that all measurements are located at same grid. Five surface classes including non-scattering surface, precipitation over land, over ocean, snow, and desert are identified from ground-truth observations. The system processes sensory data in three consecutive phases: (1) pre-processing to extract feature vectors and enhance separability among detected classes; (2) preliminary classification of Earth surface patterns using two separate and parallely acting classifiers: back-propagation neural network and binary decision tree classifiers; and (3) data fusion of results from preliminary classifiers to obtain the optimal performance in overall classification. Both the binary decision tree classifier and the fusion processing centers are implemented by neural network architectures. The fusion system configuration is a hierarchical neural network architecture, in which each functional neural net will handle different processing phases in a pipelined fashion. There is a total of around 13,500 samples for this analysis, of which 4 percent are used as the training set and 96 percent as the testing set. After training, this classification system is able to bring up the detection accuracy to 94 percent compared with 88 percent for back-propagation artificial neural networks and 80 percent for binary decision tree classifiers. The neural network data fusion classification is currently under progress to be integrated in an image processing system at NOAA and to be implemented in a prototype of a massively parallel and dynamically reconfigurable Modular Neural Ring (MNR)

    Evolution of the Hall Coefficient and the Peculiar Electronic Structure of the Cuprate Superconductors

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    Although the Hall coefficient R_H is an informative transport property of metals and semiconductors, its meaning in the cuprate superconductors has been ambiguous because of its unusual characteristics. Here we show that a systematic study of R_H in La_{2-x}Sr_{x}CuO_{4} single crystals over a wide doping range establishes a qualitative understanding of its peculiar evolution, which turns out to reflect a two-component nature of the electronic structure caused by an unusual development of the Fermi surface recently uncovered by photoemission experiments.Comment: 4 pages, 5 figures, final version appeared in Phys. Rev. Let

    High-efficiency thin-film GaAs solar cells, phase2

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    Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer

    Interfacial strain in AlxGa1–xAs layers on GaAs

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    Detailed analysis of x-ray rocking curves was used to determine the depth profile of strain and composition in a 2500-Å-thick layer of AlxGa1–xAs grown by metalorganic chemical vapor deposition on 100 GaAs. The x value and layer thickness were in good agreement with the values expected from growth parameters. The presence of a transition region, 280 Å thick, was detected by the rocking curve. In this region, the Al concentration varies smoothly from 0 to 0.87. Measurement and control of the sharpness of such interfaces has important implications for heterojunction devices
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