Optical properties of thin gold films applied to Schottky barrier solar cells

The Schottky barrier solar cell is considered a possible candidate for converting solar to electrical energy both for space and terrestrial applications. Knowledge of the optical constants of the ultrathin metal film used in the cell is essential for analyzing and designing higher efficiency Schottky barrier cells. The optical constants of 7.5 -nm (75-A) gold films on gallium arsenide have been obtained. In addition, the absolute collection efficiency of Schottky barrier solar cells has been determined from measured spectral response and optical constants of the gold film

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer

Schottky barrier solar cell

A method of fabricating a Schottky barrier solar cell is described. The cell consists of a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive. A thin layer of heavily doped n-type polycrystalling germanium is deposited on the substrate after a passivation layer is deposited to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes to serve as a base layer on which a thin layer of gallium arsenide is vapor-epitaxilly grown followed by a thermally-grown oxide layer. A metal layer is deposited on the oxide layer and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer

The vibrational predissociation spectroscopy of hydrogen cluster ions

The first infrared spectra of protonated hydrogen clusters in the gas phase have been observed. Predissociation spectra were taken with a tandem mass spectrometer: mass selected hydrogen cluster ions were irradiated inside a rf ion trap by a tunable infrared laser, and the fragment ions created by photodissociation of the clusters were mass selected and detected. Spectra for each product channel were measured by counting fragment ions as a function of laser frequency. Low resolution spectra (Deltanu=10 cm^−1) in the region from 3800 to 4200 cm^−1 were observed for the ions H + 5, H + 7, and H + 9 at 3910, 3980, and 4020 cm−1, respectively. A band was also observed for H + 5 at 3532 cm^−1. No rotational structure was resolved. The frequencies of the band maxima agree well with the frequencies predicted by previous ab initio calculations for the highest modes

Laser action generated within a light pipe: A concept

Laser light could be generated within light pipe itself, thereby eliminating coupling losses. Theoretical calculations have shown feasibility of light-pipe laser propagating in circularly-polarized TE mode. It is predicted that fiber-optic distributed-feedback laser would have gain on order of 25 dB

Infrared spectra of the cluster ions H7O⁺₃·H2 and H9O⁺₄·H2

Infrared spectra of hydrated hydronium ions weakly bound to an H2 molecule, specifically H7O + 3 ·H2 and H9O + 4 ·H2, have been observed. Mass-selected parent ions, trapped in a radio frequency ion trap, are excited by a tunable infrared laser; following absorption, the complex predissociates with loss of the H2, and the resulting fragment ions are detected. Spectra have been taken from 3000 to 4000 cm^−1, with a resolution of 1.2 cm^−1. They are compared to recent theoretical and experimental spectra of the hydronium ion hydrates alone. Binding an H2 molecule to these clusters should only weakly perturb their vibrations; if so, our spectra should be similar to spectra of the hydrated hydronium ions H7O + 3 and H9O + 4

Interfacial strain in AlxGa1–xAs layers on GaAs

Detailed analysis of x-ray rocking curves was used to determine the depth profile of strain and composition in a 2500-Å-thick layer of AlxGa1–xAs grown by metalorganic chemical vapor deposition on 100 GaAs. The x value and layer thickness were in good agreement with the values expected from growth parameters. The presence of a transition region, 280 Å thick, was detected by the rocking curve. In this region, the Al concentration varies smoothly from 0 to 0.87. Measurement and control of the sharpness of such interfaces has important implications for heterojunction devices

Data fusion with artificial neural networks (ANN) for classification of earth surface from microwave satellite measurements

A data fusion system with artificial neural networks (ANN) is used for fast and accurate classification of five earth surface conditions and surface changes, based on seven SSMI multichannel microwave satellite measurements. The measurements include brightness temperatures at 19, 22, 37, and 85 GHz at both H and V polarizations (only V at 22 GHz). The seven channel measurements are processed through a convolution computation such that all measurements are located at same grid. Five surface classes including non-scattering surface, precipitation over land, over ocean, snow, and desert are identified from ground-truth observations. The system processes sensory data in three consecutive phases: (1) pre-processing to extract feature vectors and enhance separability among detected classes; (2) preliminary classification of Earth surface patterns using two separate and parallely acting classifiers: back-propagation neural network and binary decision tree classifiers; and (3) data fusion of results from preliminary classifiers to obtain the optimal performance in overall classification. Both the binary decision tree classifier and the fusion processing centers are implemented by neural network architectures. The fusion system configuration is a hierarchical neural network architecture, in which each functional neural net will handle different processing phases in a pipelined fashion. There is a total of around 13,500 samples for this analysis, of which 4 percent are used as the training set and 96 percent as the testing set. After training, this classification system is able to bring up the detection accuracy to 94 percent compared with 88 percent for back-propagation artificial neural networks and 80 percent for binary decision tree classifiers. The neural network data fusion classification is currently under progress to be integrated in an image processing system at NOAA and to be implemented in a prototype of a massively parallel and dynamically reconfigurable Modular Neural Ring (MNR)

High-efficiency thin-film GaAs solar cells, phase2

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer

On the remote sensing of cloud properties from satellite infrared sounder data

A method for remote sensing of cloud parameters by using infrared sounder data has been developed on the basis of the parameterized infrared transfer equation applicable to cloudy atmospheres. The method is utilized for the retrieval of the cloud height, amount, and emissivity in 11 micro m region. Numerical analyses and retrieval experiments have been carried out by utilizing the synthetic sounder data for the theoretical study. The sensitivity of the numerical procedures to the measurement and instrument errors are also examined. The retrieved results are physically discussed and numerically compared with the model atmospheres. Comparisons reveal that the recovered cloud parameters agree reasonably well with the pre-assumed values. However, for cases when relatively thin clouds and/or small cloud fractional cover within a field of view are present, the recovered cloud parameters show considerable fluctuations. Experiments on the proposed algorithm are carried out utilizing High Resolution Infrared Sounder (HIRS/2) data of NOAA 6 and TIROS-N. Results of experiments show reasonably good comparisons with the surface reports and GOES satellite images