Field Study of an Oil Tank on Stone Column Ground

Two SPTs and two CPTs for ground before and after stabilization, three static loading tests for the stabilized ground with stone columns were performed. It was found that stone columns strengthened the resistance to seismic liquefaction of a saturated clayey silt layer and increased the ground bearing capacity two times. From a water preloading test of an oil tank on the improved ground it was obtained that stone columns not only decreased the total and differential settlement of the tank but also speeded the consolidation rate of the ground. Stone columns also reduced the initial excess pore water pressures developed in the improved ground in comparison with those in the unimproved one

Two-dimensional electron gas related emissions in ZnMgO/ZnO heterostructures

Radiative recombination of two-dimensional electron gas(2DEG), induced by polarization and validated by Hall effect measurements, is investigated in ZnMgO/ZnO heterostructures grown by metal-organic chemical vapor deposition. The Mg composition, the depth profile distribution of Mg, the residual strain in ZnMgO caplayer, and the thickness of caplayer all significantly influence the 2DEG-related transitions in ZnMgO/ZnO heterostructures. Below or above ZnO donor bound exciton, three additional broad emissions persisting up to 100 K are assigned to the spatially indirect transitions from 2DEG electrons to the photoexcited holes towards the ZnO flat-band region or remaining at the heterointerface.Research is supported by the State Key Program for Basic Research of China under Grant No. 2011CB302003 and National Natural Science Foundation of China (Nos. 61025020 and 60990312)

Temperature-dependent exciton-related transition energies mediated by carrier concentrations in unintentionally Al-doped ZnO films

The authors reported on a carrier-concentration mediation of exciton-related radiative transition energies in Al-doped ZnO films utilizing temperature-dependent (TD) photoluminescence and TD Hall-effect characterizations. The transition energies of free and donor bound excitons consistently change with the measured TD carrier concentrations. Such a carrier-concentration mediation effect can be well described from the view of heavy-doping-induced free-carrier screening and band gap renormalization effects. This study gives an important development to the currently known optical properties of ZnO materials.This research is supported by the State Key Program for Basic Research of China under Grant No. 2011CB302003, National Natural Science Foundation of China (Nos. 61025020, 60990312, and 61274058), Basic Research Program of Jiangsu Province (BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions

Thermal pretreatment of sapphire substrates prior to ZnO buffer layer growth

The properties of ZnO buffer layers grown via metal-organic chemical vapor deposition (MOCVD) on sapphire substrates after various thermal pretreatments are systematically investigated. High-temperature pretreatments lead to significant modifications of the sapphire surface, which result in enhanced growth nucleation and a consequent improvement of the surface morphology and quality of the ZnO layers. The evolution of the surface morphology as seen by atomic force microscopy indicates an obvious growth mode transition from three-dimensional to quasi-two-dimensional as the pretreatment temperature increases. A minimum surface roughness is obtained when the pretreatment temperature reaches 1150 °C, implying that a high-temperature pretreatment at 1150 °C or above may lead to a conversion of the surface polarity from O-face to Zn-face, similar to processes in GaN material growth via MOCVD. By analyzing the evolution of the film properties as a function of pretreatment temperature, the optimal condition has been determined to be at 1150 °C. This study indicates that a high-temperature pretreatment is crucial to grow high-quality ZnO on sapphire substrates by MOCVD.This research was supported by the State Key Program for Basic Research of China under Grant No. 2011CB302003, National Natural Science Foundation of China (Nos. 61025020, 60990312, and 61274058), Basic Research Program of Jiangsu Province (BK2011437), and the Priority Academic Program Development of Jiangsu Higher Education Institutions

Cryo-EM of full-length α-synuclein reveals fibril polymorphs with a common structural kernel.

α-Synuclein (aSyn) fibrillar polymorphs have distinct in vitro and in vivo seeding activities, contributing differently to synucleinopathies. Despite numerous prior attempts, how polymorphic aSyn fibrils differ in atomic structure remains elusive. Here, we present fibril polymorphs from the full-length recombinant human aSyn and their seeding capacity and cytotoxicity in vitro. By cryo-electron microscopy helical reconstruction, we determine the structures of the two predominant species, a rod and a twister, both at 3.7 Å resolution. Our atomic models reveal that both polymorphs share a kernel structure of a bent β-arch, but differ in their inter-protofilament interfaces. Thus, different packing of the same kernel structure gives rise to distinct fibril polymorphs. Analyses of disease-related familial mutations suggest their potential contribution to the pathogenesis of synucleinopathies by altering population distribution of the fibril polymorphs. Drug design targeting amyloid fibrils in neurodegenerative diseases should consider the formation and distribution of concurrent fibril polymorphs

A Statistic-Based Calibration Method for TIADC System

Time-interleaved technique is widely used to increase the sampling rate of analog-to-digital converter (ADC). However, the channel mismatches degrade the performance of time-interleaved ADC (TIADC). Therefore, a statistic-based calibration method for TIADC is proposed in this paper. The average value of sampling points is utilized to calculate offset error, and the summation of sampling points is used to calculate gain error. After offset and gain error are obtained, they are calibrated by offset and gain adjustment elements in ADC. Timing skew is calibrated by an iterative method. The product of sampling points of two adjacent subchannels is used as a metric for calibration. The proposed method is employed to calibrate mismatches in a four-channel 5 GS/s TIADC system. Simulation results show that the proposed method can estimate mismatches accurately in a wide frequency range. It is also proved that an accurate estimation can be obtained even if the signal noise ratio (SNR) of input signal is 20 dB. Furthermore, the results obtained from a real four-channel 5 GS/s TIADC system demonstrate the effectiveness of the proposed method. We can see that the spectra spurs due to mismatches have been effectively eliminated after calibration

High-order dynamic localization and tunable temporal cloaking in ac-electric-field driven synthetic lattices

Dynamic localization (DL) of photons, i.e., the light-motion cancellation effect arising from lattice's quasi-energy band collapse under a synthetic ac-electric-field, provides a powerful and alternative mechanism to Anderson localization for coherent light confinement. So far only low-order DLs, corresponding to weak ac-fields, have been demonstrated using curved-waveguide lattices where the waveguide's bending curvature plays the role of ac-field as required in original Dunlap-Kenkre model of DL. However, the inevitable bending losses pose a severe limitation for the observation of high-order DL. Here, we break the weak-field limitation by transferring lattice concepts from spatial to synthetic time dimensions using fiber-loop circuits and observe up to fifth-order DL. We find that high-order DLs possess superior localization and robustness against random noise over lower-order ones. As an exciting application, by judiciously combining low- and high-order DLs, we demonstrate a temporal cloaking scheme with flexible tunability both for cloak's window size and opening time. Our work pushes DL towards high-order regimes using synthetic-lattice schemes, which may find potential applications in robust signal transmission, protection, processing, and cloaking

Baicalin-aluminum alleviates necrotic enteritis in broiler chickens by inhibiting virulence factors expression of Clostridium perfringens

Clostridium perfringens type A is the main cause of necrotic enteritis (NE) in chickens. Since the use of antibiotics in feed is withdrawn, it is imperative to find out suitable alternatives to control NE. Baicalin-aluminum complex is synthesized from baicalin, a flavonoid isolated from Scutellaria baicalensis Georgi. The present study investigated the effects of baicalin-aluminum on the virulence-associated traits and virulence genes expression of C. perfringens CVCC2030, it also evaluated the in vivo therapeutic effect on NE. The results showed that baicalin-aluminum inhibited bacterial hemolytic activity, diminished biofilm formation, attenuated cytotoxicity to Caco-2 cells, downregulated the expression of genes encoding for clostridial toxins and extracellular enzymes such as alpha toxin (CPA), perfringolysin O (PFO), collagenase (ColA), and sialidases (NanI, NanJ). Additionally, baicalin-aluminum was found to negatively regulate the expression of genes involved in quorum sensing (QS) communication, including genes of Agr QS system (agrB, agrD) and genes of VirS/R two-component regulatory system (virS, virR). In vivo experiments, baicalin-aluminum lightened the intestinal lesions and histological damage, it inhibited pro-inflammatory cytokines (TNF-α, IL-1β, IL-6) expression in the jejunal and ileal tissues. Besides, baicalin-aluminum alleviated the upregulation of C. perfringens and Escherichia coli and raised the relative abundance of Lactobacillus in the ileal digesta. This study suggests that baicalin-aluminum may be a potential candidate against C. perfringens infection by inhibiting the virulence-associated traits and virulence genes expression

Identification and modulation of electronic band structures of single-phase B-(AlxGa1-x)2O3 alloys grown by laser molecular beam epitaxy

Understanding the band structure evolution of (AlxGa1x)2O3 alloys is of fundamental importance for developing Ga2O3-based power electronic devices and vacuum ultraviolet super-radiation hard detectors. Here, we report on the bandgap engineering of b-(AlxGa1x)2O3 thin films and the identification of compositionally dependent electronic band structures by a combination of absorption spectra analyses and density functional theory calculations. Single-monoclinic b-phase (AlxGa1x)2O3 (0 x 0.54) films with a preferred (201) orientation were grown by laser molecular beam epitaxy with tunable bandgap ranging from 4.5 to 5.5 eV. The excellent fitting of absorption spectra by the relation of (ah) 1/2 / (h-E) unambiguously identifies that b-(AlxGa1x)2O3 alloys are indirect bandgap semiconductors. Theoretical calculations predict that the indirect nature of b-(AlxGa1x)2O3 becomes more pronounced with increased Al composition due to the increased eigenvalue energy gap between M and U points in the valence band. The experimentally determined indirect bandgap exhibits almost a linear relationship with Al composition, which is consistent with the theoretical calculation and indicates a small bowing effect and a good miscibility. The identification and modulation of (AlxGa1x)2O3 band structures allows rational design of ultra-wide bandgap oxide heterostructures for the applications in power electronics and solar-blind or X-ray detection.This research was supported by the National Key Research and Development Project (Grant No. 2017YFB0403003), the National Natural Science Foundation of China (Grant Nos. 61774081, 61322403, and 11227904), the Natural Science Foundation of Jiangsu Province (Grant Nos. BK20130013 and BK20161401), the Six Talent Peaks Project in Jiangsu Province (2014XXRJ001), the Fundamental Research Funds for the Central Universities (021014380093 and 021014380085) and the Australian Research Council. The computational part of this research was undertaken with the assistance of resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government under the NCRIS program

Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys

The demand for high efficiency intermediate band (IB) solar cells is driving efforts in producing high quality IB photovoltaic materials. Here, we demonstrate ZnTe:O highly mismatched alloys synthesized by high dose ion implantation and pulsed laser melting exhibiting optically active IB states and efficient sub-gap photoresponse, as well as investigate the effect of pulsed laser melting on the structural and optical recovery in detail. The structural evolution and vibrational dynamics indicates a significant structural recovery of ZnTe:O alloys by liquid phase epitaxy during pulsed laser melting process, but laser irradiation also aggravates the segregation of Te in ZnTe:O alloys. A distinct intermediate band located at 1.8 eV above valence band is optically activated as evidenced by photoluminescence, absorption and photoresponse characteristics. The carrier dynamics indicates that carriers in the IB electronic states have a relatively long lifetime, which is beneficial for the fast separation of carriers excited by photons with sub-gap energy and thus the improved overall conversion efficiency. The reproducible capability of implantation and laser annealing at selective area enable the realization of high efficient lateral junction solar cells, which can ensure extreme light trapping and efficient charge separationThis research was supported by National Natural Science Foundation of China (Nos 61274058, 61271077, 61504057, 61574075 and 61322403), the Natural Science Foundation of Jiangsu Province (Nos BK2011437 and BK20130013), the Six Talent Peaks Project in Jiangsu Province (2014XXRJ001), the Priority Academic Program Development of Jiangsu Higher Education Institutions, and the Australian Research Council