116 research outputs found
Spin-phonon coupling in single Mn doped CdTe quantum dot
The spin dynamics of a single Mn atom in a laser driven CdTe quantum dot is
addressed theoretically. Recent experimental
results\cite{Le-Gall_PRL_2009,Goryca_PRL_2009,Le-Gall_PRB_2010}show that it is
possible to induce Mn spin polarization by means of circularly polarized
optical pumping. Pumping is made possible by the faster Mn spin relaxation in
the presence of the exciton. Here we discuss different Mn spin relaxation
mechanisms. First, Mn-phonon coupling, which is enhanced in the presence of the
exciton. Second, phonon-induced hole spin relaxation combined with carrier-Mn
spin flip coupling and photon emission results in Mn spin relaxation. We model
the Mn spin dynamics under the influence of a pumping laser that injects
excitons into the dot, taking into account exciton-Mn exchange and phonon
induced spin relaxation of both Mn and holes. Our simulations account for the
optically induced Mn spin pumping.Comment: 17 pages, 11 figures, submitted to PR
Dynamics of a nanowire superlattice in an ac electric field
With a one-band envelope function theory, we investigate the dynamics of a
finite nanowire superlattice driven by an ac electric field by solving
numerically the time-dependent Schroedinger equation. We find that for an ac
electric field resonant with two energy levels located in two different
minibands, the coherent dynamics in nanowire superlattices is much more complex
as compared to the standard two-level description. Depending on the energy
levels involved in the transitions, the coherent oscillations exhibit different
patterns. A signature of barrier-well inversion phenomenon in nanowire
superlattices is also obtained.Comment: 14 pages, 4 figure
Optoelectronics of Inverted Type-I CdS/CdSe Core/Crown Quantum Ring
Inverted type-I heterostructure core/crown quantum rings (QRs) are
quantum-efficient luminophores, whose spectral characteristics are highly
tunable. Here, we study the optoelectronic properties of type-I core/crown
CdS/CdSe QRs in the zincblende phase - over contrasting lateral size and crown
width. For this we inspect their strain profiles, transition energies,
transition matrix elements, spatial charge densities, electronic bandstructure,
band-mixing probabilities, optical gain spectra, maximum optical gains and
differential optical gains. Our framework uses an effective-mass envelope
function theory based on the 8-band kp method employing the valence
force field model for calculating the atomic strain distributions. The gain
calculations are based on the density-matrix equation and take into
consideration the excitonic effects with intraband scattering. Variations in
the QR lateral size and relative widths of core and crown (ergo the
composition) affect their energy levels, band-mixing probabilities, optical
transition matrix elements, emission wavelengths/intensity, etc. The optical
gain of QRs is also strongly dimension and composition dependent with further
dependency on the injection carrier density causing band-filling effect. They
also affect the maximum and differential gain at varying dimensions and
compositions.Comment: Published in AIP Journal of Applied Physics (11 pages, 7 figures
Electronic structure of silicon-based nanostructures
We have developed an unifying tight-binding Hamiltonian that can account for
the electronic properties of recently proposed Si-based nanostructures, namely,
Si graphene-like sheets and Si nanotubes. We considered the and
models up to first- and second-nearest neighbors, respectively. Our
results show that the Si graphene-like sheets considered here are metals or
zero-gap semiconductors, and that the corresponding Si nanotubes follow the
so-called Hamada's rule [Phys. Rev. Lett. {\bf 68}, 1579 1992]. Comparison to a
recent {\it ab initio} calculation is made.Comment: 12 pages, 6 Figure
Band structure of hydrogenated Si nanosheets and nanotubes
The band structure of fully hydrogenated Si nanosheets and nanotubes are
elucidated by the use of an empirical tight-binding model. The hydrogenated Si
sheet is a semiconductor with indirect band gap of about 2.2 eV. The symmetries
of the wave functions allow us to explain the origin of the gap. We predict
that, for certain chiralities, hydrogenated Si nanotubes represent a new type
of semiconductor, one with co-existing direct and indirect gaps of exactly the
same magnitude. This behavior is different from the Hamada rule established for
non-hydrogenated carbon and silicon nanotubes. Comparison to an ab initio
calculation is made.Comment: 9 pages, 4 figures, to appear in J. Phys.: Condens. Matte
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