Inductively coupled plasma etching of nano-patterned sapphire for flip-chip GaN light emitting diode applications

The flip-chip configuration is employed for the production of high-brightness GaN-based light emitting diodes to improve the extraction of heat. A lithographic approach based on a sacrificial SiO2 nanosphere etch mask was developed to enhance the external extraction of light from the sapphire substrate. Closed-packed arrays of SiO2 nanospheres were prepared by a simple solution-based method on the sapphire substrate. Subsequent dry-etching via inductively coupled plasma using a gas mixture of BCl3 and Cl2 transferred a pattern into the sapphire substrate with the lowest etching at the center of the SiO2 nanosphere. This process created an array of circular cones in the surface of the sapphire that were found to be effective in enhancing the light extraction efficiency through multi-photon scatterings. Room temperature photoluminescence exhibited an increase of 22.5% in intensity after the surface of sapphire was textured

Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m-plane GaN

This study compares the physical, chemical and electrical properties of Al[subscript 2]O[subscript 3] thin films deposited on gallium polar c- and nonpolar m -plane GaN substrates by atomic layer deposition (ALD). Correlations were sought between the film's structure, composition, and electrical properties. The thickness of the Al[subscript 2]O[subscript 3] films was 19.2 nm as determined from a Si witness sample by spectroscopic ellipsometry. The gate dielectric was slightly aluminum-rich (Al:O=1:1.3) as measured from X-ray photoelectron spectroscopy (XPS) depth profile, and the oxide-semiconductor interface carbon concentration was lower on c -plane GaN. The oxide's surface morphology was similar on both substrates, but was smoothest on c -plane GaN as determined by atomic force microscopy (AFM). Circular capacitors (50-300 μm diameter) with Ni/Au (20/100 nm) metal contacts on top of the oxide were created by standard photolithography and e-beam evaporation methods to form metal-oxide-semiconductor capacitors (MOSCAPs). The alumina deposited on c -plane GaN showed less hysteresis (0.15 V) than on m -plane GaN (0.24 V) in capacitance-voltage (CV) characteristics, consistent with its better quality of this dielectric as evidenced by negligible carbon contamination and smooth oxide surface. These results demonstrate the promising potential of ALD Al[subscript 2]O[subscript 3] on c -plane GaN, but further optimization of ALD is required to realize the best properties of Al[subscript 2]O[subscript 3] on m -plane GaN

Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors

Citation: Hossain, T., Wei, D., Edgar, J. H., Garces, N. Y., Nepal, N., Hite, J. K., . . . Meyer H.M, III. (2015). Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors. Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, 33(6). doi:10.1116/1.4931793The surface preparation for depositing Al2O3 for fabricating Au/Ni/Al2O3/n-GaN (0001) metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of high performance GaN MOSFETs. The GaN surface treatments studied included cleaning with piranha (H2O2:H2SO4 = 1:5), (NH4)2S, and 30% HF etches. By several metrics, the MOS capacitor with the piranha-etched GaN had the best characteristics. It had the lowest capacitance–voltage hysteresis, the smoothest Al2O3 surface as determined by atomic force microscopy (0.2 nm surface roughness), the lowest carbon concentration (∼0.78%) at the Al2O3/n-GaN interface (from x-ray photoelectron spectroscopy), and the lowest oxide-trap charge (QT = 1.6 × 1011 cm−2eV−1). Its interface trap density (Dit = 3.7 × 1012 cm−2eV−1), as measured with photon-assisted capacitance– voltage method, was the lowest from conduction band-edge to midgap

Revisiting Scalar and Pseudoscalar Couplings with Nucleons

Certain dark matter interactions with nuclei are mediated possibly by a scalar or pseudoscalar Higgs boson. The estimation of the corresponding cross sections requires a correct evaluation of the couplings between the scalar or pseudoscalar Higgs boson and the nucleons. Progress has been made in two aspects relevant to this study in the past few years. First, recent lattice calculations show that the strange-quark sigma term $\sigma_s$ and the strange-quark content in the nucleon are much smaller than what are expected previously. Second, lattice and model analyses imply sizable SU(3) breaking effects in the determination on the axial-vector coupling constant $g_A^8$ that in turn affect the extraction of the isosinglet coupling $g_A^0$ and the strange quark spin component $\Delta s$ from polarized deep inelastic scattering experiments. Based on these new developments, we re-evaluate the relevant nucleon matrix elements and compute the scalar and pseudoscalar couplings of the proton and neutron. We also find that the strange quark contribution in both types of couplings is smaller than previously thought.Comment: 17 pages, Sec. II is revised and the pion-nucleon sigma term extracted from the scattering data is discussed. Version to appear in JHE

Reduction of anomalous heating in an in-situ-cleaned ion trap

Anomalous heating of trapped atomic ions is a major obstacle to their use as quantum bits in a scalable quantum computer. The physical origin of this heating is not fully understood, but experimental evidence suggests that it is caused by electric-field noise emanating from the surface of the trap electrodes. In this study, we have investigated the role that adsorbates on the electrodes play by identifying contaminant overlayers, developing an in situ argon-ion beam cleaning procedure, and measuring ion heating rates before and after cleaning the trap electrodes' surfaces. We find a reduction of two orders of magnitude in heating rate after cleaning.Comment: 7 pages, 1 figur

Editors' introduction: neoliberalism and/as terror

The articles in this special issue are drawn from papers presented at a conference entitled “Neoliberalism and/as Terror”, held at the Nottingham Conference Centre at Nottingham Trent University by the Critical Terrorism Studies BISA Working Group (CSTWG) on 15-16 September 2014. The conference was supported by both a BISA workshop grant and supplementary funds from Nottingham Trent University’s Politics and International Relations Department and the Critical Studies on Terrorism journal. Papers presented at the conference aimed to extend research into the diverse linkages between neoliberalism and terrorism, including but extending beyond the contextualisation of pre-emptive counterterrorism technologies and privatised securities within relevant economic and ideological contexts. Thus, the conference sought also to stimulate research into the ways that neoliberalism could itself be understood as terrorism, asking - amongst other questions - whether populations are themselves terrorised by neoliberal policy. The articles presented in this special issue reflect the conference aims in bringing together research on the neoliberalisation of counterterrorism and on the terror of neoliberalism

Lipid-dependent gating of a voltage-gated potassium channel

Recent studies hypothesized that phospholipids stabilize two voltage-sensing arginine residues of certain voltage-gated potassium channels in activated conformations. It remains unclear how lipids directly affect these channels. Here, by examining the conformations of the KvAP in different lipids, we showed that without voltage change, the voltage-sensor domains switched from the activated to the resting state when their surrounding lipids were changed from phospholipids to nonphospholipids. Such lipid-determined conformational change was coupled to the ion-conducting pore, suggesting that parallel to voltage gating, the channel is gated by its annular lipids. Our measurements recognized that the energetic cost of lipid-dependent gating approaches that of voltage gating, but kinetically it appears much slower. Our data support that a channel and its surrounding lipids together constitute a functional unit, and natural nonphospholipids such as cholesterol should exert strong effects on voltage-gated channels. Our first observation of lipid-dependent gating may have general implications to other membrane proteins