γ-ray spectroscopy of C19 via the single-neutron knock-out reaction

The one-neutron knock-out reaction H-1(C-20, C-19 gamma) was studied at RIKEN using the DALI2 array. A gamma-ray transition was observed at 198(10) keV. Based on the comparison between the experimental production cross section and theoretical predictions, the transition was assigned to the de-excitation of the 3/2(1)(+) state to the ground state

Nuclear structure study of 19,20,21N nuclei by gamma spectroscopy

The structure of neutron rich nitrogen nuclei has been studied by use of neutron removal reaction and inelastic scattering. Mass and charge deformations have been deduced for the first excited state of 21N, which indicates the partial persitence of the N=14 subshell closure in nitrogen isotopes. The spectroscopic information obtained on the structure of 19,20,21N confirms the results from a previous experiment

OXIDE DEFINED TJS LASERS IN INGAASP-INP DH-STRUCTURES

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Determination Of Lattice Mismatch In Ga1-xalxas Lpe Layer On Gaas Substrate By Using A Divergent X-ray Source

A new method of determining lattice mismatch in LPE heterojunction systems has been developed by utilizing a divergent x-ray source. The experimental arrangements and operation procedures are much simpler than those of the usual x-ray methods

IMPROVEMENT OF BREAKDOWN CHARACTERISTICS OF A GAAS POWER FIELD-EFFECT TRANSISTOR USING (NH4)2SX TREATMENT

A (NH4)2Sx solution treatment technique was applied to a GaAs metal-semiconductor field-effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor-type defects at the GaAs surface and to increase the Schottky barrier height.open1156sciescopu