How do edge states position themselves in a quantum Hall graphene pn junction?

Recent experiments have shown that electronic Mach-Zehnder interferometers of unprecedented fidelities could be built using a graphene pn junction in the quantum Hall regime. In these junctions, two different edge states corresponding to two different valley configurations are spatially separated and form the two arms of the interferometer. The observed separation, of several tens of nanometers, has been found to be abnormally high and thus associated to unrealistic values of the exchange interaction. In this work, we show that, although the separation is due to exchange interaction, its actual value is entirely governed by the sample geometry and independent of the value of the exchange splitting. Our analysis follows the lines of the classical work of Chklovski-Shklovskii- Glazman on electrostatically induced edge state reconstruction and includes quantitative numerical calculations in the experimental geometries.Comment: 4 pages, 4 figure

mazF, a novel counter-selectable marker for unmarked chromosomal manipulation in Bacillus subtilis

Here, we present a novel method for the directed genetic manipulation of the Bacillus subtilis chromosome free of any selection marker. Our new approach employed the Escherichia coli toxin gene mazF as a counter-selectable marker. The mazF gene was placed under the control of an isopropyl-β-d-thiogalactopyranoside (IPTG)-inducible expression system and associated with a spectomycin-resistance gene to form the MazF cassette, which was flanked by two directly-repeated (DR) sequences. A double-crossover event between the linearized delivery vector and the chromosome integrated the MazF cassette into a target locus and yielded an IPTG-sensitive strain with spectomycin-resistance, in which the wild-type chromosome copy had been replaced by the modified copy at the targeted locus. Another single-crossover event between the two DR sequences led to the excision of the MazF cassette and generated a strain with IPTG resistance, thereby realizing the desired alteration to the chromosome without introducing any unwanted selection markers. We used this method repeatedly and successfully to inactivate a specific gene, to introduce a gene of interest and to realize the in-frame deletion of a target gene in the same strain. As there is no prerequisite strain for this method, it will be a powerful and universal tool

Fermionic response from fractionalization in an insulating two-dimensional magnet

Conventionally ordered magnets possess bosonic elementary excitations, called magnons. By contrast, no magnetic insulators in more than one dimension are known whose excitations are not bosons but fermions. Theoretically, some quantum spin liquids (QSLs) -- new topological phases which can occur when quantum fluctuations preclude an ordered state -- are known to exhibit Majorana fermions as quasiparticles arising from fractionalization of spins. Alas, despite much searching, their experimental observation remains elusive. Here, we show that fermionic excitations are remarkably directly evident in experimental Raman scattering data across a broad energy and temperature range in the two-dimensional material $\alpha$-RuCl$_3$. This shows the importance of magnetic materials as hosts of Majorana fermions. In turn, this first systematic evaluation of the dynamics of a QSL at finite temperature emphasizes the role of excited states for detecting such exotic properties associated with otherwise hard-to-identify topological QSLs.Comment: 5 pages, 3 figure

The All-Data-Based Evolutionary Hypothesis of Ciliated Protists with a Revised Classification of the Phylum Ciliophora (Eukaryota, Alveolata)

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article's Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ The file attached is the published version of the article

Efficient coupling of photons to a single molecule and the observation of its resonance fluorescence

Single dye molecules at cryogenic temperatures display many spectroscopic phenomena known from free atoms and are thus promising candidates for fundamental quantum optical studies. However, the existing techniques for the detection of single molecules have either sacrificed the information on the coherence of the excited state or have been inefficient. Here we show that these problems can be addressed by focusing the excitation light near to the absorption cross section of a molecule. Our detection scheme allows us to explore resonance fluorescence over 9 orders of magnitude of excitation intensity and to separate its coherent and incoherent parts. In the strong excitation regime, we demonstrate the first observation of the Mollow triplet from a single solid-state emitter. Under weak excitation we report the detection of a single molecule with an incident power as faint as 150 attoWatt, paving the way for studying nonlinear effects with only a few photons.Comment: 6 figure

Carrier relaxation, pseudogap, and superconducting gap in high-Tc cuprates: A Raman scattering study

We describe results of electronic Raman-scattering experiments in differently doped single crystals of Y-123 and Bi-2212. The comparison of AF insulating and metallic samples suggests that at least the low-energy part of the spectra originates predominantly from excitations of free carriers. We therefore propose an analysis of the data in terms of a memory function approach. Dynamical scattering rates and mass-enhancement factors for the carriers are obtained. In B2g symmetry the Raman data compare well to the results obtained from ordinary and optical transport. For underdoped materials the dc scattering rates in B1g symmetry become temperature independent and considerably larger than in B2g symmetry. This increasing anisotropy is accompanied by a loss of spectral weight in B2g symmetry in the range between the superconducting transition at Tc and a characteristic temperature T* of order room temperature which compares well with the pseudogap temperature found in other experiments. The energy range affected by the pseudogap is doping and temperature independent. The integrated spectral loss is approximately 25% in underdoped samples and becomes much weaker towards higher carrier concentration. In underdoped samples, superconductivity related features in the spectra can be observed only in B2g symmetry. The peak frequencies scale with Tc. We do not find a direct relation between the pseudogap and the superconducting gap.Comment: RevTeX, 21 pages, 24 gif figures. For PostScript with embedded eps figures, see http://www.wmi.badw-muenchen.de/~opel/k2.htm

HARPS3 for a roboticized Isaac Newton telescope

This is the author accepted manuscript. The final version is available from the publisher via the DOI in this record.We present a description of a new instrument development, HARPS3, planned to be installed on an upgraded and roboticized Isaac Newton Telescope by end-2018. HARPS3 will be a high resolution (R = 115,000) echelle spectrograph with a wavelength range from 380-690 nm. It is being built as part of the Terra Hunting Experiment - a future 10 year radial velocity measurement programme to discover Earth-like exoplanets. The instrument design is based on the successful HARPS spectrograph on the 3.6m ESO telescope and HARPS-N on the TNG telescope. The main changes to the design in HARPS3 will be: a customised fibre adapter at the Cassegrain focus providing a stabilised beam feed and on-sky fibre diameter ~ 1.4 arcsec, the implementation of a new continuous flow cryostat to keep the CCD temperature very stable, detailed characterisation of the HARPS3 CCD to map the effective pixel positions and thus provide an improved accuracy wavelength solution, an optimised integrated polarimeter and the instrument integrated into a robotic operation. The robotic operation will optimise our programme which requires our target stars to be measured on a nightly basis. We present an overview of the entire project, including a description of our anticipated robotic operation.R.H. acknowledges the Science and Technologies Facilities Council (STFC) for his PhD studentship award (2015).J.I.G.H. acknowledges financial support from the Spanish Ministry of Economy and Competitiveness (MINECO) under the 2013 Ram´on y Cajal program MINECO RYC-2013-14875.J.I.G.H., R.R., and S.S.T. also acknowledge the Spanish ministry project MINECO AYA2014-56359-P.NP and ES are grateful to Knut and Alice Wallenberg Foundation for a generous support of the Swedish contribution to the THE project.AD acknowledges the support from Russian Foundation for Basic Research as part of research grant 15-52-12371

Infrastructure for Detector Research and Development towards the International Linear Collider

The EUDET-project was launched to create an infrastructure for developing and testing new and advanced detector technologies to be used at a future linear collider. The aim was to make possible experimentation and analysis of data for institutes, which otherwise could not be realized due to lack of resources. The infrastructure comprised an analysis and software network, and instrumentation infrastructures for tracking detectors as well as for calorimetry.Comment: 54 pages, 48 picture

Prototype ATLAS IBL Modules using the FE-I4A Front-End Readout Chip

The ATLAS Collaboration will upgrade its semiconductor pixel tracking detector with a new Insertable B-layer (IBL) between the existing pixel detector and the vacuum pipe of the Large Hadron Collider. The extreme operating conditions at this location have necessitated the development of new radiation hard pixel sensor technologies and a new front-end readout chip, called the FE-I4. Planar pixel sensors and 3D pixel sensors have been investigated to equip this new pixel layer, and prototype modules using the FE-I4A have been fabricated and characterized using 120 GeV pions at the CERN SPS and 4 GeV positrons at DESY, before and after module irradiation. Beam test results are presented, including charge collection efficiency, tracking efficiency and charge sharing.Comment: 45 pages, 30 figures, submitted to JINS

Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects

The ITRS predicts that the scaling of planar CMOS (Complementary Metal Oxide Semiconductor) technology will continue till the 22 nm technology node [1] and a possible extension beyond is appealing [2]. In this work, we investigate the effect of electron confinement [3] in nanoscaled transistor channels of 25 nm surface channel Si and 32 nm SOI (Silicon on Insulator) and 15 nm IF (Implant Free) III-V MOSFETs using a self-consistent solution of 1 D Poisson - Schrödinger equation [4,5]. For simulat ion and development with accuracy of nano-scaled of 25 nm gate length Si MOSFET (Metal Oxide Semiconductor Field Effect Transistor), 32 nm SOI Implant Free (IF) MOSFET, and 15nm Implant Free III-V MOSFET transistors, we investigated the bandstructure and quantum confinement effects occurring near the oxide-semiconductor interface inmetal-Oxide-Semiconductor (MOS) structure of Si MOSFET device. These investigation have been carried out using a selfconsistent solution of 1D Poisson-Schrödinger equation across the channel of conventional Si / SOI / III-V MOSFET Transistors. To solve self-consistently 1D Poisson-Schrödinger equations across the channel of a conventional Si, SOI, and an Implant Free III-V MOSFETs to determine the conduction and valence band profiles, electron density, electron sheet density, eigenstate and eigenfunctions in these structures. We present the simulat ion results of conduction band profile, electron density (classical and quantum mechanical), eigenstate and eigenfunctions for Si, SOI and III-V MOSFET structures at two different bias voltages of 0.5 V and 1.0 V. For comparison, we calculate the electron sheet density (quantum mechanically) as a function of the applied gate voltages