Recent progress in the development of β-Ga2O3 scintillator crystals grown by the Czochralski method

A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators

Recent Progress in the Development of β-Ga2O3 Scintillator Crystals Grown by the Czochralski Method

A high-quality bulk single crystal of β-Ga2O3 has been grown by the Czochralski method and its basic scintillation characteristics (light yield, energy resolution, proportionality, and scintillation decay times) have been investigated. All the samples cut from the crystal show promising scintillation yields between 8400 and 8920 ph/MeV, which is a noticeable step forward compared to previous studies. The remaining parameters, i.e. the energy resolution slightly above 10% (at 662 keV) and the scintillation mean decay time just under 1 μs, are at the same level as we have formerly recognized for β-Ga2O3. The proportionality of yield seems not to deviate from standards determined by other commercial scintillators

Tailoring the Scintillation Properties of β-Ga2O3 by Doping with Ce and Codoping with Si

Measurements of pulse height spectra and scintillation time profiles performed on Czochralski-grown β-Ga2O3, β-Ga2O3:Ce, and β-Ga2O3:Ce,Si crystals are reported. The highest value of scintillation yield, 7040 ph/MeV, was achieved for pure β-Ga2O3 at a low free electron concentration, nevertheless Ce-doped crystals could also approach high values thereof. Si-codoping, however, decreases the scintillation yield. The presence of Ce, and the more of Ce and Si, in β-Ga2O3 significantly increases the contribution of the fastest components in scintillation time profiles, which makes β-Ga2O3 a very fast scintillator under γ-excitation

Charge traps in Ce-doped CaF2 and BaF2

Thermoluminescence of CaF2:Ce, BaF2, and BaF2:Ce irradiated at room temperature is reported. X-ray induced emission spectra of the samples show that both excitonic (due to e- + VK recombination) and Ce3+ d-f luminescence may contribute to thermoluminescence signal. The simple Randall-Wilkins model is used to deconvolute glow curves into seven to eight first-order peaks. Parameters of all traps are calculated and correlations between peaks in the curves of the examined materials are discussed

Low temperature thermoluminescence of β-Ga2O3 scintillator

Low temperature thermoluminescence of β-Ga2O3, β-Ga2O3:Al and β-Ga2O3:Ce has been investigated. Glow curves have been analyzed quantitatively using a rate equations model in order to determine the traps parameters, such as activation energies, capture cross-sections and probabilities of recombination and retrapping

33000 Photons per MeV from Mixed (Lu0.75Y0.25)3Al5O12:Pr Scintillator Crystals

(LuxY1-x)3Al5O12:Pr (x = 0.25, 0.50, 0.75) crystals have been grown by the Czochralski method and their scintillation properties have been examined. Compared to the well-respected LuAG:Pr scintillator, which has so extensively been studied in the recent years, the new mixed LuYAG:Pr crystals display markedly higher light yields, regardless of the value of x. In particular, (Lu0.75Y0.25)3Al5O12:0.2%Pr characterized by a yield of 33000 ph/MeV, an energy resolution of 4.4% (at 662 keV), and a density of 6.2 g/cm3, seems to be an ideal candidate to supercede Lu3Al5O12:0.2%Pr (19000 ph/MeV, 4.6%, 6.7 g/cm3) in various applications. The observed enhancement of light output following the partial substitution of lutetium by yttrium is most probably related to some specific differences in distributions of shallow traps in particular materials

Heading for brighter and faster β-Ga2O3 scintillator crystals

Czochralski-grown β-Ga2O3 and β-Ga2O3:Si crystals with the free electron concentrations between 2.5·1016 and 4.3·1018 cm−3 have been characterized by means of pulse height and scintillation time profile measurements in order to assess their basic scintillation properties. At room temperature, with increasing free electron concentration in the studied range, the scintillation yields decrease from 8920 to 1930 ph/MeV, while the mean scintillation decay times pare down from 989 to 61 ns. However, when the brightest β-Ga2O3 sample is cooled down below 100 K, its scintillation yield exceeds 20000 ph/MeV

Spectroscopy and Thermoluminescence of LuAlO3:Ce

The present status of the LuAlO3:Ce scintillator is reviewed. Scintillation mechanism of this material is based on capture by Ce3+ of holes and then electrons from their respective bands. Results of spectroscopic and thermoluminescence experiments are presented to support this model

A Deeper Insight into (Lu,Y)AG:Pr Scintillator Crystals

Interior of Czochralski-grown (Lu,Y)AG:Pr crystals has been examined by means of several techniques, such as X-Ray Photoelectron Spectroscopy, X-Ray Diffraction, Time-of-Flight Secondary Ion Mass Spectrometry, and magnetic susceptibility measurements. Additionally, their luminescence has been monitored at various combinations of a double-beam (X-ray/IR) excitation