Diffraction Properties and Application of 3D Polymer Woodpile Photonic Crystal Structure

We present a new technique for modification of diffraction and optical properties of photonic devices by surface application of polymer Three-Dimensional (3D) woodpile Photonic Crystal (PhC) structure. Woodpile structure based on IP-Dip polymer was designed and fabricated by Direct Laser Writing (DLW) lithography method based on nonlinear Two-Photon Absorption (TPA). At first, we investigated diffraction properties of woodpile structure with a period of 2 μm. The structure was placed on a glass substrate, and diffraction patterns were measured using laser sources with different wavelengths. After diffraction properties investigation, the fabricated structures were used in optoelectronic devices by their surface application. Our polymer 3D PhC woodpile structures were used for radiation properties modification of light emitting devices - optical fiber and Light Emitting Diode (LED) and for angular photoresponse modification of InGaAsN-based photodiode. The modification of the far-field radiation patterns of optical fiber and LED and spatial modulation of light coupling into photodiode chip with applied structures were measured by goniophotometer. Quality of fabricated structures was analyzed by a Scanning Electron Microscope (SEM)

GaInNas/GaAs QW Based Structures to Compensate Parasitic Effect of Quantum-Confined Stark Effect in Photodetector Applications

The inhomogeneities of multicomponent semiconductor alloys, as well as phase segregation, can be utilized for enhancement of photodetector absorption properties and thus its efficiency. In this paper, the influence of external electric field on the probability of light absorption in the GaInNAs quantum well is discussed. Both phenomenon: indium and nitrogen composition gradient as well as step-like quantum well are applied to design the QW with compensation of the Quantum-Confined Stark Effect (QCSE) Parasitic effect of QCSE results from decrease of the wave functions overlapping in the QWs placed in reverse biased junction, which finally decrease the efficiency of the photodetector

Synthesis of New Perhydropyrrolo[1,2-a]pyrazine Derivatives and Their Evaluation in Animal Models of Epilepsy

A series of novel stereochemically pure derivatives of the investigative broad-spectrum anticonvulsant ADD408003 was designed and synthesized. Five-center four-component (U-5C-4CR) and four-center three-component (U-4C-3CR) variants of Ugi reaction were used in the key step of the synthetic pathways. The compounds obtained were evaluated for the anticonvulsant activitiy in the maximal electroshock seizure (MES), subcutaneous Metrazole (scMET) and minimal clonic seizure (6 Hz) animal models of epilepsy. The efficacies of most derivatives in the 6 Hz model of pharmacoresistant partial seizures were markedly higher than in the ‘classical’ MES and scMET models. The most active compounds, (4R,8aR)-3a, and (4S,8aS)-6 displayed median effective doses (ED50) of 47.90 and 126.19 mg/kg, respectively, for the 6 Hz test

STRUCTURAL CHARACTERIZATION OF DOPED THICK GaInNAs LAYERS ---AMBIGUITIES AND CHALLENGES

GaInNAs alloys are mostly used as an active part of light sources for long wavelength telecom applications. Beside this, these materials are used as thin quantum wells (QWs), and a need is to grow thick layers of such semiconductor alloys for photodetectors and photovoltaic cells applications. However, structural characterization of the GaInNAs layers is hindered by non-homogeneity of the In and N distributions along the layer. In this work the challenges of the structural characterization of doped thick GaInNAs layers grown by atmospheric pressure metalorganic vapour phase epitaxy (APMOVPE) will be presented

Influence of As-N Interstitial Complexes on Strain Generated in GaAsN Epilayers Grown by AP-MOVPE

This work presents an investigation of the fully strained GaAsN/GaAs heterostructures obtained by atmospheric pressure metalorganic vapor phase epitaxy, focusing on the analysis of the strain generated in the GaAsN epilayers and its correlation with the formation of split interstitial complexes (N-As)As. We analyzed strained GaAsN epilayers with nitrogen contents and thicknesses varying from 0.93 to 1.81% and 65 to 130 nm, respectively. The composition and thickness were determined by high resolution X-ray diffraction, and the strain was determined by Raman spectroscopy, while the N-bonding configurations were determined by X-ray photoelectron spectroscopy. We found that the strain generated in the GaAsN epilayers is mainly caused by a lattice mismatch with the GaAs substrate. This macroscopic strain is independent of the amount of (N-As)As interstitial defects, while the local strain, induced by an alloying effect, tends to decrease with an increasing ratio of (N-As)As interstitial defects to substitutional nitrogen atoms incorporated into an arsenic sublattice—NAs. Here, we show experimentally, for the first time, a correlation between the strain in the GaAsN epilayers, caused by an alloying effect determined by Raman spectroscopy, and the (N-As)As/NAs ratio estimated by the XPS method. We found out that the (N-As)As interstitials compensate the local strain resulting from the presence of N in the GaAs matrix, if their amount does not exceed ~65% of the substitutional introduced nitrogen NAs