4,261 research outputs found

    Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy

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    The conducting interface of LaAlO3_3/SrTiO3_3 heterostructures has been studied by hard X-ray photoelectron spectroscopy. From the Ti~2pp signal and its angle-dependence we derive that the thickness of the electron gas is much smaller than the probing depth of 4 nm and that the carrier densities vary with increasing number of LaAlO3_3 overlayers. Our results point to an electronic reconstruction in the LaAlO3_3 overlayer as the driving mechanism for the conducting interface and corroborate the recent interpretation of the superconducting ground state as being of the Berezinskii-Kosterlitz-Thouless type.Comment: 4 pages, 4 figure

    Evolution of the interfacial structure of LaAlO3 on SrTiO3

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    The evolution of the atomic structure of LaAlO3 grown on SrTiO3 was investigated using surface x-ray diffraction in conjunction with model-independent, phase-retrieval algorithms between two and five monolayers film thickness. A depolarizing buckling is observed between cation and oxygen positions in response to the electric field of polar LaAlO3, which decreases with increasing film thickness. We explain this in terms of competition between elastic strain energy, electrostatic energy, and electronic reconstructions. The findings are qualitatively reproduced by density-functional theory calculations. Significant cationic intermixing across the interface extends approximately three monolayers for all film thicknesses. The interfaces of films thinner than four monolayers therefore extend to the surface, which might affect conductivity

    Unit cell of graphene on Ru(0001): a 25 x 25 supercell with 1250 carbon atoms

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    The structure of a single layer of graphene on Ru(0001) has been studied using surface x-ray diffraction. A surprising superstructure has been determined, whereby 25 x 25 graphene unit cells lie on 23 x 23 unit cells of Ru. Each supercell contains 2 x 2 crystallographically inequivalent subcells caused by corrugation. Strong intensity oscillations in the superstructure rods demonstrate that the Ru substrate is also significantly corrugated down to several monolayers, and that the bonding between graphene and Ru is strong and cannot be caused by van der Waals bonds. Charge transfer from the Ru substrate to the graphene expands and weakens the C-C bonds, which helps accommodate the in-plane tensile stress. The elucidation of this superstructure provides important information in the potential application of graphene as a template for nanocluster arrays.Comment: 9 pages, 3 figures, paper submitted to peer reviewed journa

    The electronic structure of La1−x_{1-x}Srx_{x}MnO3_{3} thin films and its TcT_c dependence as studied by angle-resolved photoemission

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    We present angle-resolved photoemission spectroscopy results for thin films of the three-dimensional manganese perovskite La1−x_{1-x}Srx_{x}MnO3_{3}. We show that the transition temperature (TcT_c) from the paramagnetic insulating to ferromagnetic metallic state is closely related to details of the electronic structure, particularly to the spectral weight at the k{\bf k}-point, where the sharpest step at the Fermi level was observed. We found that this k{\bf k}-point is the same for all the samples, despite their different TcT_c. The change of TcT_c is discussed in terms of kinetic energy optimization. Our ARPES results suggest that the change of the electronic structure for the samples having different transition temperatures is different from the rigid band shift.Comment: Accepted by Journal of Physics: Condensed Matte

    Systematic Control of Carrier Doping without Disorder at Interface of Oxide Heterostructures

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    We propose a method to systematically control carrier densities at the interface of transition-metal oxide heterostructures without introducing disorders. By inserting non-polar layers sandwiched by polar layers, continuous carrier doping into the interface can be realized. This method enables us to control the total carrier densities per unit cell systematically up to high values of the order unity.Comment: 8 pages, 9 figure

    Measurement of the Fermi Constant by FAST

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    An initial measurement of the lifetime of the positive muon to a precision of 16 parts per million (ppm) has been performed with the FAST detector at the Paul Scherrer Institute. The result is tau_mu = 2.197083 (32) (15) microsec, where the first error is statistical and the second is systematic. The muon lifetime determines the Fermi constant, G_F = 1.166353 (9) x 10^-5 GeV^-2 (8 ppm).Comment: 15 pages, 6 figure
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