Indication of Non-equilibrium Transport in SiGe p-MOSFETs

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Enhanced velocity overshoot and transconductance in Si/Si(0.64)Ge(0.36)/Si pMOSFETs - predictions for deep submicron devices

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Improved effective mobility extraction in MOSFETs

The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K

SiGe field effect transistors - performance and applications

Recent and encouraging developments in Schotky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications

Electrical conductivity and thermoelectric power of nickel ferrous ferrite. Variable-range hopping and the Coulomb gap

Electrical conductivity and thermoelectric power measurements have been made on single crystals of nickel ferrous ferrite, NixFe3-xO4 of compositions 0x0·9, in the temperature range 10 to 300 K. The temperature and concentration dependences of the conductivity and of the thermopower at high nickel concentrations (x 0·4) are discussed in terms of variable-range hopping and of nearest-neighbour hopping in an energy distribution of localized states, or the 'Anderson band'. It is argued that there is evidence for the formation of a Coulomb gap and for many-electron hopping in samples of low nickel content (

The concentration dependences of the electrical conductivity and ordinary Hall coefficient of nickel ferrous ferrite

The electrical conductivity and ordinary Hall coefficient of single crystals of nickel ferrous ferrite (NixFe3-xO4) in the composition range 0=x=0·9 have been measured at 300 K. The results are compared with theories of hopping in disordered media. Both the conductivity and Hall data permit the radius of the carrier wavefunction to be deduced and it is found that this is about 0·5 Å

Anomalous electrical properties of manganese iron oxide (MnxFe3-xO4)

Two anomalies are observed in the temperature dependencies of the electrical conductivity and the thermoelectric power of ferrimagnetic manganese ferrites: a magnetic anomaly at the Néel temperature which can be explained with a model proposed previously and a second anomaly at 620 K which is due to a cation redistribution process

The electrical properties of manganese ferrite (MnFe2O4) at the Neel temperature

Electrical conductivity and thermopower measurements have been made on zinc and manganese ferrous ferrite, ZnxFe3-xO4 and MnxFe3 -xO4 with 0 = X <1, in the temperature range 100–300 K. The results for X <0.5 are tentatively interpreted in terms of the formation of a Coulomb gap at low temperatures in an energy band of localized states. For X = 0.5 the electrical conductivity is symptomatic of nearest-neighbour hopping, and the thermopower varies as In c where c=(1 - X)/2. The energy bandwidth of conduction states has been extracted from the thermopower and electrical conductivity data and is shown to be roughly proportional to the standard deviation of the Zn and Mn distributions [X(1 - X)1/2. A polaron contribution to the conductivity activation energy of approximately 0.03 eV at room temperature has been deduced for Mn0.8Fe2.2O4 and Mn0.8Fe2.1O4