210 research outputs found
Voltage Control of Exchange Coupling in Phosphorus Doped Silicon
Motivated by applications to quantum computer architectures we study the
change in the exchange interaction between neighbouring phosphorus donor
electrons in silicon due to the application of voltage biases to surface
control electrodes. These voltage biases create electro-static fields within
the crystal substrate, perturbing the states of the donor electrons and thus
altering the strength of the exchange interaction between them. We find that
control gates of this kind can be used to either enhance, or reduce the
strength of the interaction, by an amount that depends both on the magnitude
and orientation of the donor separation.Comment: 5 Pages, 5 Figure
Robust CNOT gates from almost any interaction
There are many cases where the interaction between two qubits is not
precisely known, but single qubit operations are available. In this paper we
show how, regardless of an incomplete knowledge of the strength or form of the
interaction between two qubits, it is often possible to construct a CNOT gate
which has arbitrarily high fidelity. In particular, we show that oscillations
in the strength of the exchange interaction in solid state Si and Ge structures
are correctable.Comment: 5 pages, 2 figure
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Cross-talk compensation of hyperfine control in donor qubit architectures
We theoretically investigate cross-talk in hyperfine gate control of
donor-qubit quantum computer architectures, in particular the Kane proposal. By
numerically solving the Poisson and Schr\"{o}dinger equations for the gated
donor system, we calculate the change in hyperfine coupling and thus the error
in spin-rotation for the donor nuclear-electron spin system, as the gate-donor
distance is varied. We thus determine the effect of cross-talk - the
inadvertent effect on non-target neighbouring qubits - which occurs due to
closeness of the control gates (20-30nm). The use of compensation protocols is
investigated, whereby the extent of crosstalk is limited by the application of
compensation bias to a series of gates. In light of these factors the
architectural implications are then considered.Comment: 15 pages, 22 figures, submitted to Nanotechnolog
Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture
We calculate the electron exchange coupling for a phosphorus donor pair in
silicon perturbed by a J-gate potential and the boundary effects of the silicon
host geometry. In addition to the electron-electron exchange interaction we
also calculate the contact hyperfine interaction between the donor nucleus and
electron as a function of the varying experimental conditions. Donor
separation, depth of the P nuclei below the silicon oxide layer and J-gate
voltage become decisive factors in determining the strength of both the
exchange coupling and the hyperfine interaction - both crucial components for
qubit operations in the Kane quantum computer. These calculations were
performed using an anisotropic effective-mass Hamiltonian approach. The
behaviour of the donor exchange coupling as a function of the device parameters
varied provides relevant information for the experimental design of these
devices.Comment: 15 pages, 15 figures. Accepted for Journal of Physics: Condensed
Matte
A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture
We present a theoretical analysis of a microwave spectroscopy experiment on a
charge qubit defined by a P donor pair in silicon, for which we calculate
Hamiltonian parameters using the effective-mass theory of shallow donors. We
solve the master equation of the driven system in a dissipative environment to
predict experimental outcomes. We describe how to calculate physical parameters
of the system from such experimental results, including the dephasing time,
, and the ratio of the resonant Rabi frequency to the relaxation rate.
Finally we calculate probability distributions for experimentally relevant
system parameters for a particular fabrication regime
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A precise CNOT gate in the presence of large fabrication induced variations of the exchange interaction strength
We demonstrate how using two-qubit composite rotations a high fidelity
controlled-NOT (CNOT) gate can be constructed, even when the strength of the
interaction between qubits is not accurately known. We focus on the exchange
interaction oscillation in silicon based solid-state architectures with a
Heisenberg Hamiltonian. This method easily applies to a general two-qubit
Hamiltonian. We show how the robust CNOT gate can achieve a very high fidelity
when a single application of the composite rotations is combined with a modest
level of Hamiltonian characterisation. Operating the robust CNOT gate in a
suitably characterised system means concatenation of the composite pulse is
unnecessary, hence reducing operation time, and ensuring the gate operates
below the threshold required for fault-tolerant quantum computation.Comment: 9 pages, 8 figure
Phonon-induced decoherence and dissipation in donor-based charge qubits
We investigate the phonon-induced decoherence and dissipation in a
donor-based charge quantum bit realized by the orbital states of an electron
shared by two dopant ions which are implanted in a silicon host crystal. The
dopant ions are taken from the group-V elements Bi, As, P, Sb. The excess
electron is coupled to deformation potential acoustic phonons which dominate in
the Si host. The particular geometry tailors a non-monotonous frequency
distribution of the phonon modes. We determine the exact qubit dynamics under
the influence of the phonons by employing the numerically exact quasi-adiabatic
propagator path integral scheme thereby taking into account all bath-induced
correlations. In particular, we have improved the scheme by completely
eliminating the Trotter discretization error by a Hirsch-Fye extrapolation. By
comparing the exact results to those of a Born-Markov approximation we find
that the latter yields appropriate estimates for the decoherence and relaxation
rates. However, noticeable quantitative corrections due to non-Markovian
contributions appear.Comment: 8 pages, 8 figures, published online in Eur.Phys.J.B, article in
press; the original publication is avaiable at www.eurphysj.or
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