505 research outputs found
Universal scaling of the Hall resistivity in MgB2 superconductors
The mixed-state Hall resistivity and the longitudinal resistivity in
superconducting MgB2 thin films have been investigated as a function of the
magnetic field over a wide range of current densities from 100 to 10000 A/cm^2.
We observe a universal Hall scaling behavior with a constant exponent of 2.0,
which is independent of the magnetic field, the temperature, and the current
density. This result can be interpreted well within the context of recent
theories.Comment: 4 page
Microheated substrates for patterning cells and controlling development
Here, we seek to control cellular development by devising a means through which cells can be subjected to a microheated environment in standard culture conditions. Numerous techniques have been devised for controlling cellular function and development via manipulation of surface environmental cues at the micro- and nanoscale. It is well understood that temperature plays a significant role in the rate of cellular activities, migratory behavior (thermotaxis), and in some cases, protein expression. Yet, the effects and possible utilization of micrometer-scale temperature fields in cell cultures have not been explored. Toward this end, two types of thermally isolated microheated substrates were designed and fabricated, one with standard backside etching beneath a dielectric film and another with a combination of surface and bulk micromachining and backside etching. The substrates were characterized with infrared microscopy, finite element modeling, scanning electron microscopy, stylus profilometry, and electrothermal calibrations. Neuron culture studies were conducted on these substrates to 1) examine the feasibility of using a microheated environment to achieve patterned cell growth and 2) selectively accelerate neural development on regions less than 100wide. Results show that attached neurons, grown on microheated regions set at 37, extended processes substantially faster than those incubated at 25on the same substrate. Further, unattached neurons were positioned precisely along the length of the heater filament (operating at 45) using free convection currents. These preliminary findings indicate that microheated substrates may be used to direct cellular development spatially in a practical manner.$hfillhbox[1414]
Scaling Behavior of Anomalous Hall Effect and Longitudinal Nonlinear Response in High-Tc Superconductors
Based on existing theoretical model and by considering our longitudinal
nonlinear response function, we derive a nonliear equation in which the mixed
state Hall resistivity can be expressed as an analytical function of magnetic
field, temperature and applied current. This equation enables one to compare
quantitatively the experimental data with theoretical model. We also find some
new scaling relations of the temperature and field dependency of Hall
resistivity. The comparison between our theoretical curves and experimental
data shows a fair agreement.Comment: 4 pages, 3 figure
Far-infrared transmission studies of c-axis oriented superconducting MgB2 thin film
We reported far-infrared transmission measurements on a c-axis oriented
superconducting MgB thin film in the frequency range of 30 250
cm. We found that these measurements were sensitive to values of
scattering rate and superconducting gap . By fitting the
experimental transmission spectra at 40 K and below, we obtained
(700 1000) cm and 42 cm. These two
quantities suggested that MgB belong to the dirty limit.Comment: submitted at May
Fabrication of FeSe1-x superconducting films with bulk properties
We have fabricated high-quality FeSe1-x superconducting films with a bulk Tc
of 11-12 K on different substrates, Al2O3(0001), SrTiO3(100), MgO(100), and
LaAlO3(100), by using a pulsed laser deposition technique. All the films were
grown at a high substrate temperature of 610 oC, and were preferentially
oriented along the (101) direction, the latter being to be a key to fabricating
of FeSe1-x superconducting thin films with high Tc. According to the energy
dispersive spectroscopy data, the Fe:Se composition ratio was 1:0.90+-0.02. The
FeSe1-x film grown on a SrTiO3 substrate showed the best quality with a high
upper critical magnetic field [Hc2(0)] of 56 T
Muon-spin-relaxation study of the magnetic penetration depth in MgB2
The magnetic vortex lattice (VL) of polycrystalline MgB2 has been
investigated by transverse-field muon-spin-relaxation (TF-MuSR). The evolution
of TF-MuSR depolarization rate, sigma, that is proportional to the second
moment of the field distribution of the VL has been studied as a function of
temperature and applied magnetic field. The low temperature value s exhibits a
pronounced peak near Hext = 75 mT. This behavior is characteristic of strong
pinning induced distortions of the VL which put into question the
interpretation of the low-field TF-MuSR data in terms of the magnetic
penetration depth lambda(T). An approximately constant value of sigma, such as
expected for an ideal VL in the London-limit, is observed at higher fields of
Hext > 0.4 T. The TF-MuSR data at Hext = 0.6 T are analyzed in terms of a
two-gap model. We obtain values for the gap size of D1 = 6.0 meV (2D1/kBTc =
3.6), D2 = 2.6 meV (2D2/kBTc = 1.6), a comparable spectral weight of the two
bands and a zero temperature value for the magnetic penetration depth of lambda
= 100 nm. In addition, we performed MuSR-measurements in zero external field
(ZF-MuSR). We obtain evidence that the muon site (at low temperature) is
located on a ring surrounding the center of the boron hexagon. Muon diffusion
sets in already at rather low temperature of T > 10 K. The nuclear magnetic
moments can account for the observed relaxation rate and no evidence for
electronic magnetic moments has been obtained.Comment: 15 pages, 4 figure
Influence of guided mode absorption on the effectiveness of GaN-on-sapphire photonic crystal light-emitting diodes
Enhanced light extraction from photonic crystal light-emitting diodes etched into the device surface is described. Finite difference time domain modeling indicates that scattering or absorption at the substrate-epilayer interface is the dominant limiting process
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