A weakly correlated Fermi liquid state with a small Fermi surface in lightly doped Sr3_3Ir2_2O7_7

We characterize the electron doping evolution of (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$ by means of angle-resolved photoemission. Concomitant with the metal insulator transition around $x\approx0.05$ we find the emergence of coherent quasiparticle states forming a closed small Fermi surface of volume $3x/2$, where $x$ is the independently measured La concentration. The quasiparticle weight $Z$ remains large along the entire Fermi surface, consistent with the moderate renormalization of the low-energy dispersion. This indicates a conventional, weakly correlated Fermi liquid state with a momentum independent residue $Z\approx0.5$ in lightly doped Sr$_3$Ir$_2$O$_7&.Comment: 5 pages, 4 figure

A laser-ARPES study of LaNiO3 thin films grown by sputter deposition

Thin films of the correlated transition-metal oxide LaNiO$_3$ undergo a metal-insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the electronic structure across this transition in a series of epitaxial LaNiO$_3$ films of thicknesses ranging from 19 to 2 u.c. grown in situ by RF magnetron sputtering. Our data show a strong reduction of the electronic mean free path as the thickness is reduced below 5 u.c. This prevents the system from becoming electronically two-dimensional, as confirmed by the largely unchanged Fermi surface seen in our experiments. In the insulating state we observe a strong suppression of the coherent quasiparticle peak but no clear gap. These features resemble previous observations of the insulating state of NdNiO$_3$.Comment: Submitted to APL Material

Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films

The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-earth nickelate thin films, while most electron-doping studies have been performed on bulk materials so far. To tackle this imbalance, a detailed study that addresses doping of NdNiO thin films using A-site substitution is presented, using Pb as a dopant and taking advantage of its valence-skipping nature. Through a combination of complementary techniques including X-ray diffraction, transport measurements, X-ray absorption spectroscopy, electron energy-loss spectroscopy and scanning transmission electron microscopy, the valence of Pb in the NdPbNiO structure is confirmed to be 4+, and the behavior of the doped thin films is found to be controlled by a competition between carrier injection and structural distortions, which respectively reduce and increase the metal-to-insulator transition temperature. This work provides a systematic study of electron doping in NdNiO, demonstrating that A-site substitution with Pb is an appropriate method for such doping in perovskite rare-earth nickelate systems

Competition between Carrier Injection and Structural Distortions in Electron‐Doped Perovskite Nickelate Thin Films

The discovery of superconductivity in doped infinite‐layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole‐doped perovskite rare‐earth nickelate thin films, while most electron‐doping studies have been performed on bulk materials so far. To tackle this imbalance, a detailed study that addresses doping of NdNiO$_{3}$ thin films using A‐site substitution is presented, using Pb as a dopant and taking advantage of its valence‐skipping nature. Through a combination of complementary techniques including X‐ray diffraction, transport measurements, X‐ray absorption spectroscopy, electron energy‐loss spectroscopy and scanning transmission electron microscopy, the valence of Pb in the Nd$_{1−x}$Pb$_{x}$NiO$_{3}$ structure is confirmed to be 4+, and the behavior of the doped thin films is found to be controlled by a competition between carrier injection and structural distortions, which respectively reduce and increase the metal‐to‐insulator transition temperature. This work provides a systematic study of electron doping in NdNiO$_{3}$, demonstrating that A‐site substitution with Pb is an appropriate method for such doping in perovskite rare‐earth nickelate systems

Finishing the euchromatic sequence of the human genome

The sequence of the human genome encodes the genetic instructions for human physiology, as well as rich information about human evolution. In 2001, the International Human Genome Sequencing Consortium reported a draft sequence of the euchromatic portion of the human genome. Since then, the international collaboration has worked to convert this draft into a genome sequence with high accuracy and nearly complete coverage. Here, we report the result of this finishing process. The current genome sequence (Build 35) contains 2.85 billion nucleotides interrupted by only 341 gaps. It covers ∼99% of the euchromatic genome and is accurate to an error rate of ∼1 event per 100,000 bases. Many of the remaining euchromatic gaps are associated with segmental duplications and will require focused work with new methods. The near-complete sequence, the first for a vertebrate, greatly improves the precision of biological analyses of the human genome including studies of gene number, birth and death. Notably, the human enome seems to encode only 20,000-25,000 protein-coding genes. The genome sequence reported here should serve as a firm foundation for biomedical research in the decades ahead

Increasing frailty is associated with higher prevalence and reduced recognition of delirium in older hospitalised inpatients: results of a multi-centre study

Purpose: Delirium is a neuropsychiatric disorder delineated by an acute change in cognition, attention, and consciousness. It is common, particularly in older adults, but poorly recognised. Frailty is the accumulation of deficits conferring an increased risk of adverse outcomes. We set out to determine how severity of frailty, as measured using the CFS, affected delirium rates, and recognition in hospitalised older people in the United Kingdom. Methods: Adults over 65 years were included in an observational multi-centre audit across UK hospitals, two prospective rounds, and one retrospective note review. Clinical Frailty Scale (CFS), delirium status, and 30-day outcomes were recorded. Results: The overall prevalence of delirium was 16.3% (483). Patients with delirium were more frail than patients without delirium (median CFS 6 vs 4). The risk of delirium was greater with increasing frailty [OR 2.9 (1.8–4.6) in CFS 4 vs 1–3; OR 12.4 (6.2–24.5) in CFS 8 vs 1–3]. Higher CFS was associated with reduced recognition of delirium (OR of 0.7 (0.3–1.9) in CFS 4 compared to 0.2 (0.1–0.7) in CFS 8). These risks were both independent of age and dementia. Conclusion: We have demonstrated an incremental increase in risk of delirium with increasing frailty. This has important clinical implications, suggesting that frailty may provide a more nuanced measure of vulnerability to delirium and poor outcomes. However, the most frail patients are least likely to have their delirium diagnosed and there is a significant lack of research into the underlying pathophysiology of both of these common geriatric syndromes

Two dimensional electron liquids at oxide surfaces studied by angle resolved photoemission spectroscopy

In this thesis I have investigated the electronic structure of two-dimensional electron liquids (2DEL) induced at different surfaces of the transition metal oxide band insulators SrTiO3, KTaO3 and anatase TiO2 by angle-resolved photoemission spectroscopy (ARPES). I present high-resolution ARPES data, spin-resolved ARPES data and the results of self-consistent tight binding supercell calculations of 2DEL band structures

A laser-ARPES study of LaNiO3 thin films grown by sputter deposition

Thin films of the correlated transition-metal oxide LaNiO3 undergo a metal–insulator transition when their thickness is reduced to a few unit cells. Here, we use angle-resolved photoemission spectroscopy to study the evolution of the electronic structure across this transition in a series of epitaxial LaNiO3 films of thicknesses ranging from 19 u.c. to 2 u.c. grown in situ by RF magnetron sputtering. Our data show a strong reduction in the electronic mean free path as the thickness is reduced below 5 u.c. This prevents the system from becoming electronically two-dimensional, as confirmed by the largely unchanged Fermi surface seen in our experiments. In the insulating state, we observe a strong suppression of the coherent quasiparticle peak, but no clear gap. These features resemble previous observations of the insulating state of NdNiO3

A Laser‐ARPES view of the 2D electron systems at LaAlO_3 /SrTiO_3 and Al/SrTiO_3 interfaces

The electronic structure of the two-dimensional electron system (2DES) found at the Al/SrTiO_3 (Al/STO) and LaAlO_3/SrTiO_3 (LAO/STO) interfaces is measured by means of laser angle resolved photoemission spectroscopy, taking advantage of the large photoelectron escape depth at low photon energy to probe these buried interfaces. The possibility of tuning the electronic density in Al/STO by varying the Al layer thickness is demonstrated, and it is shown that the electronic structure evolution is well described by self-consistent tight binding supercell calculations, but differs qualitatively from a rigid band shift model. It is shown that both 2DES are strongly coupled to longitudinal optical phonons, in agreement with previous reports of a polaronic ground state in similar STO based 2DESs. Tuning the electronic density in Al/STO to match that of LAO/STO and comparing both systems, it is estimated that the intrinsic LAO/STO 2DES has a bare band width of approximate to 60 meV and a carrier density of approximate to 6 x 10^13 cm^-2