20,702 research outputs found

    Demonstration test of burner liner strain measurements using resistance strain gages

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    A demonstration test of burner liner strain measurements using resistance strain gages as well as a feasibility test of an optical speckle technique for strain measurement are presented. The strain gage results are reported. Ten Kanthal A-1 wire strain gages were used for low cycle fatigue strain measurements to 950 K and .002 apparent strain on a JT12D burner can in a high pressure (10 atmospheres) burner test. The procedure for use of the strain gages involved extensive precalibration and postcalibration to correct for cooling rate dependence, drift, and temperature effects. Results were repeatable within + or - .0002 to .0006 strain, with best results during fast decels from 950 K. The results agreed with analytical prediction based on an axisymmetric burner model, and results indicated a non-uniform circumferential distribution of axial strain, suggesting temperature streaking

    High temperature strain gage technology for hypersonic aircraft development applications

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    An experimental evaluation of Pd 13 percent Cr and of BCL-3 alloy wire strain gages was conducted on IN100 and Cu 0.15 percent Zr alloy substrates. Testing included apparent strain, drift, gage factor, and creep. Maximum test temperature was 1144 K (1600 F). The PdCr gages incorporated Pt temperature compensation elements. The PdCr gages were found to have good resistance stability below 866 K (1100 F). The BCL 3 gages were found to have good resistance stability above 800 K (981 F), but high drift around 700 K (800 F)

    Regina v. Campbell (1964)2 O.R. 487, 46 D.L.R. (2D) 83

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    Investigation of critical slowing down in a bistable S-SEED

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    A simulation of S-SEED switching based upon experimental data is developed that includes the effect of critical slowing down. The simulation's accuracy is demonstrated by close agreement with the results from experimental S-SEED switching. The simulation is subsequently used to understand how the phenomenon of critical slowing down applies to switching of an S-SEED and how the effect on photonic analog-to-digital (A/D) converter performance may be minimized.B. A. Clare, K. A. Corbett, K. J. Grant, P. B. Atanackovic, W. Marwood and J. Munc

    Using ACIS on the Chandra X-ray Observatory as a particle radiation monitor II

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    The Advanced CCD Imaging Spectrometer is an instrument on the Chandra X-ray Observatory. CCDs are vulnerable to radiation damage, particularly by soft protons in the radiation belts and solar storms. The Chandra team has implemented procedures to protect ACIS during high-radiation events including autonomous protection triggered by an on-board radiation monitor. Elevated temperatures have reduced the effectiveness of the on-board monitor. The ACIS team has developed an algorithm which uses data from the CCDs themselves to detect periods of high radiation and a flight software patch to apply this algorithm is currently active on-board the instrument. In this paper, we explore the ACIS response to particle radiation through comparisons to a number of external measures of the radiation environment. We hope to better understand the efficiency of the algorithm as a function of the flux and spectrum of the particles and the time-profile of the radiation event.Comment: 10 pages, 5 figures, to be published in Proc. SPIE 8443, "Space Telescopes and Instrumentation 2012: Ultraviolet to Gamma Ray

    Imaging X-ray spectrometer

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    An X-ray spectrometer for providing imaging and energy resolution of an X-ray source is described. This spectrometer is comprised of a thick silicon wafer having an embedded matrix or grid of aluminum completely through the wafer fabricated, for example, by thermal migration. The aluminum matrix defines the walls of a rectangular array of silicon X-ray detector cells or pixels. A thermally diffused aluminum electrode is also formed centrally through each of the silicon cells with biasing means being connected to the aluminum cell walls and causes lateral charge carrier depletion between the cell walls so that incident X-ray energy causes a photoelectric reaction within the silicon producing collectible charge carriers in the form of electrons which are collected and used for imaging

    Nucleation of cracks in a brittle sheet

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    We use molecular dynamics to study the nucleation of cracks in a two dimensional material without pre-existing cracks. We study models with zero and non-zero shear modulus. In both situations the time required for crack formation obeys an Arrhenius law, from which the energy barrier and pre-factor are extracted for different system sizes. For large systems, the characteristic time of rupture is found to decrease with system size, in agreement with classical Weibull theory. In the case of zero shear modulus, the energy opposing rupture is identified with the breakage of a single atomic layer. In the case of non-zero shear modulus, thermally activated fracture can only be studied within a reasonable time at very high strains. In this case the energy barrier involves the stretching of bonds within several layers, accounting for a much higher barrier compared to the zero shear modulus case. This barrier is understood within adiabatic simulations
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