Molecular junctions in the Coulomb blockade regime: rectification and nesting

Quantum transport through single molecules is very sensitive to the strength of the molecule-electrode contact. Here, we investigate the behavior of a model molecular junction weakly coupled to external electrodes in the case where charging effects do play an important role (Coulomb blockade regime). As a minimal model we consider a molecular junction with two spatially separated donor and acceptor sites. Depending on their mutual coupling to the electrodes, the resulting transport observables show well defined features such as rectification effects in the I-V characteristics and nesting of the stability diagrams. To be able to accomplish these results, we have developed a theory which allows to explore the charging regime via the nonequilibrium Green function formalism parallel to the widely used master equation technique. Our results, beyond their experimental relevance, offer a transparent framework for the systematic and modular inclusion of a richer physical phenomenology

Emergence of a negative charging energy in a metallic dot capacitively coupled to a superconducting island

We consider the hybrid setup formed by a metallic dot, capacitively coupled to a superconducting island S connected to a bulk superconductor by a Josephson junction. Charge fluctuations in S act as a dynamical gate and overscreen the electronic repulsion in the metallic dot, producing an attractive interaction between two additional electrons. As the offset charge of the metallic dot is increased, the dot charging curve shows positive steps ($+2e$) followed by negative ones ($-e$) signaling the occurrence of a negative differential capacitance. A proposal for experimental detection is given, and potential applications in nanoelectronics are mentioned.Comment: Revised version, 4 pages, 4 figure

Nonadiabatic Electron Manipulation in Quantum-Dot Arrays

A novel method of coherent manipulation of the electron tunneling in quantum-dots is proposed, which utilizes the quantum interference in nonadiabatic double-crossing of the discrete energy levels. In this method, we need only a smoothly varying gate voltage to manipulate electrons, without a sudden switching-on and off. A systematic design of a smooth gate-pulse is presented with a simple analytic formula to drive the two-level electronic state to essentially arbitrary target state, and numerical simulations for complete transfer of an electron is shown for a coupled double quantum-dots and an array of quantum-dots. Estimation of the manipulation-time shows that the present method can be employed in realistic quantum-dots

Mesoscopic threshold detectors: Telegraphing the size of a fluctuation

We propose a two-terminal method to measure shot noise in mesoscopic systems based on an instability in the current-voltage characteristic of an on-chip detector. The microscopic noise drives the instability, which leads to random switching of the current between two values, the telegraph process. In the Gaussian regime, the shot noise power driving the instability may be extracted from the I-V curve, with the noise power as a fitting parameter. In the threshold regime, the extreme value statistics of the mesoscopic conductor can be extracted from the switching rates, which reorganize the complete information about the current statistics in an indirect way, "telegraphing" the size of a fluctuation. We propose the use of a quantum double dot as a mesoscopic threshold detector.Comment: 9 pages, 7 figures, published versio

Effects of different geometries on the conductance, shot noise and tunnel magnetoresistance of double quantum dots

The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current, differential conductance, shot noise and tunnel magnetoresistance (TMR) as a function of both the bias and gate voltages for double quantum dots coupled in series, in parallel as well as for T-shaped systems. For DQDs coupled in series, we find a strong dependence of the TMR on the number of electrons occupying the double dot, and super-Poissonian shot noise in the Coulomb blockade regime. In addition, for asymmetric DQDs, we analyze transport in the Pauli spin blockade regime and explain the existence of the leakage current in terms of cotunneling and spin-flip cotunneling-assisted sequential tunneling. For DQDs coupled in parallel, we show that the transport characteristics in the weak coupling regime are qualitatively similar to those of DQDs coupled in series. On the other hand, in the case of T-shaped quantum dots we predict a large super-Poissonian shot noise and TMR enhanced above the Julliere value due to increased occupation of the decoupled quantum dot. We also discuss the possibility of determining the geometry of the double dot from transport characteristics. Furthermore, where possible, we compare our results with existing experimental data on nonmagnetic systems and find qualitative agreement.Comment: 15 pages, 12 figures, accepted in Phys. Rev.

Depletion-mode Quantum Dots in Intrinsic Silicon

We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO$_2$/Al$_2$O$_3$ dielectric stack to induce a 2DHG at the Si/SiO$_2$ interface. Fabrication of the gate structures is accomplished with a single layer metallization process. Transport spectroscopy reveals regular Coulomb oscillations with charging energies of 10-15 meV and 3-5 meV for the few- and many-hole regimes, respectively. This depletion-mode design avoids complex multilayer architectures requiring precision alignment, and allows to adopt directly best practices already developed for depletion dots in other material systems. We also demonstrate a method to deactivate fixed charge in the SiO$_2$/Al$_2$O$_3$ dielectric stack using deep ultraviolet light, which may become an important procedure to avoid unwanted 2DHG build-up in Si MOS quantum bits.Comment: Accepted to Applied Physics Letters. 5 pages, 3 figure

Resonant and coherent transport through Aharonov-Bohm interferometers with coupled quantum dots

A detailed description of the tunneling processes within Aharonov-Bohm (AB) rings containing two-dimensional quantum dots is presented. We show that the electronic propagation through the interferometer is controlled by the spectral properties of the embedded dots and by their coupling with the ring. The transmittance of the interferometer is computed by the Landauer-B\"uttiker formula. Numerical results are presented for an AB interferometer containing two coupled dots. The charging diagrams for a double-dot interferometer and the Aharonov Bohm oscillations are obtained, in agreement with the recent experimental results of Holleitner {\it et al}. [Phys. Rev. Lett. {\bf 87}, 256802 (2001)] We identify conditions in which the system shows Fano line shapes. The direction of the asymetric tail depends on the capacitive coupling and on the magnetic field. We discuss our results in connection with the experiments of Kobayashi {\it et al} [Phys. Rev. Lett. {\bf 88}, 256806 (2002)] in the case of a single dot.Comment: 30 pages, 12 figure

Spin-polarized transport through weakly coupled double quantum dots in the Coulomb-blockade regime

We analyze cotunneling transport through two quantum dots in series weakly coupled to external ferromagnetic leads. In the Coulomb blockade regime the electric current flows due to third-order tunneling, while the second-order single-barrier processes have indirect impact on the current by changing the occupation probabilities of the double dot system. We predict a zero-bias maximum in the differential conductance, whose magnitude is conditioned by the value of the inter-dot Coulomb interaction. This maximum is present in both magnetic configurations of the system and results from asymmetry in cotunneling through different virtual states. Furthermore, we show that tunnel magnetoresistance exhibits a distinctively different behavior depending on temperature, being rather independent of the value of inter-dot correlation. Moreover, we find negative TMR in some range of the bias voltage.Comment: 9 pages, 7 figures, accepted in Phys. Rev.

Phonon Rabi-assisted tunneling in diatomic molecules

We study electronic transport in diatomic molecules connected to metallic contacts in the regime where both electron-electron and electron-phonon interactions are important. We find that the competition between these interactions results in unique resonant conditions for interlevel transitions and polaron formation: the Coulomb repulsion requires additional energy when electrons attempt phonon-assisted interlevel jumps between fully or partially occupied levels. We apply the equations of motion approach to calculate the electronic Green's functions. The density of states and conductance through the system are shown to exhibit interesting Rabi-like splitting of Coulomb blockade peaks and strong temperature dependence under the it interacting resonant conditions.Comment: Updated version, 5 pages, 4 figures, to be published in Phys. Rev. B on 9/1