Flow test on mocked-up circuit

Air velocity measurements of hot gas flow syste

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions

Letter from the outgoing president; Through the Ages

At the end of my two year term as President, I would like to make a few observations on the past two years of the Academy. Page also includes short obituary of Percival Flack Brundage

Message from the president [1978, vol. 1, no. 1]

Over and above letting the Academy know about your willingness to cooperate in established activities, we need suggestions concerning worthwhile tasks and projects to undertake: thus widening the scope of our activities. This, I believe, will stimulate our organization appreciably

Semiconductor quantum dot - a quantum light source of multicolor photons with tunable statistics

We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order temporal coherence function of the photons emitted at various wavelengths is measured as a function of the excitation power. We show experimentally and theoretically, for the first time, that a quantum dot is not only a source of correlated non-classical monochromatic photons but is also a source of correlated non-classical \emph{multicolor} photons with tunable correlation properties. We found that the emitted photon statistics can be varied by the excitation rate from a sub-Poissonian one, where the photons are temporally antibunched, to super-Poissonian, where they are temporally bunched.Comment: 4 pages, 2 figure

The effect of protein timing on muscle strength and hypertrophy: a meta-analysis

Protein timing is a popular dietary strategy designed to optimize the adaptive response to exercise. The strategy involves consuming protein in and around a training session in an effort to facilitate muscular repair and remodeling, and thereby enhance post-exercise strength- and hypertrophy-related adaptations. Despite the apparent biological plausibility of the strategy, however, the effectiveness of protein timing in chronic training studies has been decidedly mixed. The purpose of this paper therefore was to conduct a multi-level meta-regression of randomized controlled trials to determine whether protein timing is a viable strategy for enhancing post-exercise muscular adaptations. The strength analysis comprised 478 subjects and 96 ESs, nested within 41 treatment or control groups and 20 studies. The hypertrophy analysis comprised 525 subjects and 132 ESs, nested with 47 treatment or control groups and 23 studies. A simple pooled analysis of protein timing without controlling for covariates showed a small to moderate effect on muscle hypertrophy with no significant effect found on muscle strength. In the full meta-regression model controlling for all covariates, however, no significant differences were found between treatment and control for strength or hypertrophy. The reduced model was not significantly different from the full model for either strength or hypertrophy. With respect to hypertrophy, total protein intake was the strongest predictor of ES magnitude. These results refute the commonly held belief that the timing of protein intake in and around a training session is critical to muscular adaptations and indicate that consuming adequate protein in combination with resistance exercise is the key factor for maximizing muscle protein accretion

Single photon Mach-Zehnder interferometer for quantum networks based on the Single Photon Faraday Effect: principle and applications

Combining the recent progress in semiconductor nanostructures along with the versatility of photonic crystals in confining and manipulating light, quantum networks allow for the prospect of an integrated and low power quantum technology. Within quantum networks, which consist of a system of waveguides and nanocavities with embedded quantum dots, it has been demonstrated in theory that many-qubit states stored in electron spins could be teleported from one quantum dot to another via a single photon using the Single Photon Faraday Effect. However, in addition to being able to transfer quantum information from one location to another, quantum networks need added functionality such as (1) controlling the flow of the quantum information and (2) performing specific operations on qubits that can be easily integrated. In this paper, we show how in principle a single photon Mach-Zehnder interferometer, which uses the concept of the single photon Faraday Effect to manipulate the geometrical phase of a single photon, can be operated both as a switch to control the flow of quantum information inside the quantum network and as various single qubit quantum gates to perform operations on a single photon. Our proposed Mach-Zehnder interferometer can be fully integrated as part of a quantum network on a chip. Given that the X gate, the Z gate, and the XZ gate are essential for the implementation of quantum teleportation, we show explicitly their implementation by means of our proposed single photon Mach-Zehnder interferometer. We also show explicitly the implementation of the Hadamard gate and the single-qubit phase gate, which are needed to complete the universal set of quantum gates for integrated quantum computing in a quantum network.Comment: 25 pages, 16 figure

Optical spectroscopy of single quantum dots at tunable positive, neutral and negative charge states

We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of negative electrons and positive holes into an isolated InGaAs quantum dot embedded in a GaAs matrix. Thereby, we optically produced the charge states -3, -2, -1, 0, +1 and +2. The injected carriers form confined collective 'artificial atoms and molecules' states in the quantum dot. We resolve spectrally and temporally the photoluminescence from an optically excited quantum dot and use it to identify collective states, which contain charge of one type, coupled to few charges of the other type. These states can be viewed as the artificial analog of charged atoms such as H$^{-}$, H$^{-2}$, H$^{-3}$, and charged molecules such as H$_{2}^{+}$ and H$_{3}^{+2}$. Unlike higher dimensionality systems, where negative or positive charging always results in reduction of the emission energy due to electron-hole pair recombination, in our dots, negative charging reduces the emission energy, relative to the charge-neutral case, while positive charging increases it. Pseudopotential model calculations reveal that the enhanced spatial localization of the hole-wavefunction, relative to that of the electron in these dots, is the reason for this effect.Comment: 5 figure

Deep-ultraviolet photodetectors from epitaxially grown NixMg1-xO

Deep-ultraviolet (DUV) photodetectors were fabricated from high quality NixMg1-xO epitaxially grown by plasma-assisted molecular beam epitaxy on an approximately lattice matched MgO \u3c 100 \u3e substrate. A mid-range Ni composition (x=0.54) NixMg1-xO film was grown for DUV (lambda(peak) \u3c 300 nm) photoresponse and the film was characterized by reflected high-energy electron diffraction, Rutherford backscattering spectroscopy, x-ray diffraction, and optical transmission measurements. Photoconductive detectors were then fabricated by deposition of symmetric interdigitated contacts (10 nm Pt/150 nm Au) with contact separations of 5, 10, and 15 mu m. The detectors exhibited peak responsivities in the DUV (lambda(peak) approximate to 250 nm) as high as 12 mA/W, low dark currents (I-dark \u3c 25 nA), and DUV:visible ejection ratio of approximately 800:1