1,131 research outputs found
Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon
Atomic-scale understanding of phosphorous donor wave functions underpins the
design and optimisation of silicon based quantum devices. The accuracy of
large-scale theoretical methods to compute donor wave functions is dependent on
descriptions of central-cell-corrections, which are empirically fitted to match
experimental binding energies, or other quantities associated with the global
properties of the wave function. Direct approaches to understanding such
effects in donor wave functions are of great interest. Here, we apply a
comprehensive atomistic theoretical framework to compute scanning tunnelling
microscopy (STM) images of subsurface donor wave functions with two
central-cell-correction formalisms previously employed in the literature. The
comparison between central-cell models based on real-space image features and
the Fourier transform profiles indicate that the central-cell effects are
visible in the simulated STM images up to ten monolayers below the silicon
surface. Our study motivates a future experimental investigation of the
central-cell effects via STM imaging technique with potential of fine tuning
theoretical models, which could play a vital role in the design of donor-based
quantum systems in scalable quantum computer architectures.Comment: Nanoscale 201
A tunable, dual mode field-effect or single electron transistor
A dual mode device behaving either as a field-effect transistor or a single
electron transistor (SET) has been fabricated using silicon-on-insulator metal
oxide semiconductor technology. Depending on the back gate polarisation, an
electron island is accumulated under the front gate of the device (SET regime),
or a field-effect transistor is obtained by pinching off a bottom channel with
a negative front gate voltage. The gradual transition between these two cases
is observed. This dual function uses both vertical and horizontal tunable
potential gradients in non-overlapped silicon-on-insulator channel
A hybrid metal/semiconductor electron pump for quantum metrology
Electron pumps capable of delivering a current higher than 100pA with
sufficient accuracy are likely to become the direct mise en pratique of the
possible new quantum definition of the ampere. Furthermore, they are essential
for closing the quantum metrological triangle experiment which tests for
possible corrections to the quantum relations linking e and h, the electron
charge and the Planck constant, to voltage, resistance and current. We present
here single-island hybrid metal/semiconductor transistor pumps which combine
the simplicity and efficiency of Coulomb blockade in metals with the
unsurpassed performances of silicon switches. Robust and simple pumping at
650MHz and 0.5K is demonstrated. The pumped current obtained over a voltage
bias range of 1.4mV corresponds to a relative deviation of 5e-4 from the
calculated value, well within the 1.5e-3 uncertainty of the measurement setup.
Multi-charge pumping can be performed. The simple design fully integrated in an
industrial CMOS process makes it an ideal candidate for national measurement
institutes to realize and share a future quantum ampere
Recruitment of Immune Cells into Inflamed Tissues: Consequences for Endothelial Barrier Integrity and Tissue Functionality
Crossing the Vascular Wall: Common and Unique Mechanisms Exploited by Different Leukocyte Subsets during Extravasation
Leukocyte extravasation is one of the essential and first steps during the initiation of inflammation. Therefore, a better understanding of the key molecules that regulate this process may help to develop novel therapeutics for treatment of inflammation-based diseases such as atherosclerosis or rheumatoid arthritis. The endothelial adhesion molecules ICAM-1 and VCAM-1 are known as the central mediators of leukocyte adhesion to and transmigration across the endothelium. Engagement of these molecules by their leukocyte integrin receptors initiates the activation of several signaling pathways within both leukocytes and endothelium. Several of such events have been described to occur during transendothelial migration of all leukocyte subsets, whereas other mechanisms are known only for a single leukocyte subset. Here, we summarize current knowledge on regulatory mechanisms of leukocyte extravasation from a leukocyte and endothelial point of view, respectively. Specifically, we will focus on highlighting common and unique mechanisms that specific leukocyte subsets exploit to succeed in crossing endothelial monolayers
Curve classes on irreducible holomorphic symplectic varieties
We prove that the integral Hodge conjecture holds for 1-cycles on irreducible
holomorphic symplectic varieties of K3 type and of Generalized Kummer type. As
an application, we give a new proof of the integral Hodge conjecture for cubic
fourfolds.Comment: 15 page
Valley filtering and spatial maps of coupling between silicon donors and quantum dots
Exchange coupling is a key ingredient for spin-based quantum technologies
since it can be used to entangle spin qubits and create logical spin qubits.
However, the influence of the electronic valley degree of freedom in silicon on
exchange interactions is presently the subject of important open questions.
Here we investigate the influence of valleys on exchange in a coupled
donor/quantum dot system, a basic building block of recently proposed schemes
for robust quantum information processing. Using a scanning tunneling
microscope tip to position the quantum dot with sub-nm precision, we find a
near monotonic exchange characteristic where lattice-aperiodic modulations
associated with valley degrees of freedom comprise less than 2~\% of exchange.
From this we conclude that intravalley tunneling processes that preserve the
donor's and valley index are filtered out of the interaction
with the valley quantum dot, and that the and
intervalley processes where the electron valley index changes are weak.
Complemented by tight-binding calculations of exchange versus donor depth, the
demonstrated electrostatic tunability of donor/QD exchange can be used to
compensate the remaining intravalley oscillations to realise uniform
interactions in an array of highly coherent donor spins.Comment: 6 pages, 4 figures, 6 pages Supplemental Materia
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