Absolute negative conductivity in two-dimensional electron systems under microwave radiation

We overview mechanisms of absolute negative conductivity in two-dimensional electron systems in a magnetic field irradiated with microwaves and provide plausible explanations of the features observed in recent experiments related to the so-called zero-resistance (zero-conductance) states.Comment: 4 pages, 7 figures, presented at Internat. Symp. on Functional Semiconductor Nanosystems, Atsugi, Japan, Nov. 12-14, 2003, be published in Physica

Pseudo-gap and spin polarization in a two-dimensional electron gas

Tunnelling density of states in the vicinity of Fermi level of a two-dimensional electron gas subjected to an external parallel and zeroth magnetic field is calculated. It reveals a pseudo-gap recently observed in the experiments. The gap originates in spin polarization of 2DEG. Non-monotonic dependence of energy on a Landau level filling factor (density) was obtained. It implies the tunneling current peculiarities at filling factors 1/2 and 1. The Ising-like model of the exchange interaction in 2DEG was exploited instead of the conventional one. It was crucial to achieve even a qualitative agreement with experimental data.Comment: 6 pages, 3 figure; corrected typos, improved figure

Effect of heating and cooling of photogenerated electron-hole plasma in optically pumped graphene on population inversion

We study the characteristics of photogenerated electron-hole plasma in optically pumped graphene layers at elevated (room) temperatures when the interband and intraband processes of emission and absorption of optical phonons play a crucial role. The electron-hole plasma heating and cooling as well as the effect of nonequilibrium optical phonons are taken into account. % The dependences of the quasi-Fermi energy and effective temperature of optically pumped graphene layers on the intensity of pumping radiation are calculated. The variation of the frequency dependences dynamic conductivity with increasing pumping intensity as well as the conditions when this conductivity becomes negative in a certain range of frequencies are considered. % The effects under consideration can markedly influence the achievement of the negative dynamic conductivity in optically pumped graphene layers associated with the population inversion and, hence, the realization graphene-based terahertz and infrared lasers operating at room temperatures.Comment: 12 pages, 7 figure

Current-voltage characteristics of a graphene nanoribbon field-effect transistor

We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrate (the back gate) and the top gate controlling the source-drain current. The equations of the model of a graphene nanoribbon field-effect transistor (GNR-FET) include the Poisson equation in the weak nonlocality approximation. Using this model, we find explicit analytical formulas for the spatial distributions of the electric potential along the channel and for the GNR-FET current-voltage characteristics (the dependences of the source-drain current on the drain voltages as well as on the back gate and top gate voltages) for different geometric parameters of the device. It is shown that the shortening of the top gate can result in a substantial modification of the GNR-FET current-voltage characteristics.Comment: 8 pages, 8 figure