Through-membrane electron-beam lithography for ultrathin membrane applications

We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is spray-coated on the backside of the membrane in a KOH- etched cavity in silicon which is patterned using through-membrane electron-beam lithography. This is a controlled way to make transparent windows in membranes, whilst the topside of the membrane remains undamaged and retains its flatness. Our approach was optimized for MEMS-based heating chips but can be applied to any chip design. We show two different applications of this technique for (1) fabrication of a nanogap electrode by means of electromigration in thin free-standing metal films and (2) making low-noise graphene nanopore devices

High frequency mechanical excitation of a silicon nanostring with piezoelectric aluminum nitride layers

A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems

Graphene field-effect transistors as room-temperature terahertz detectors.

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples

Graphene plasmonics

Two rich and vibrant fields of investigation, graphene physics and plasmonics, strongly overlap. Not only does graphene possess intrinsic plasmons that are tunable and adjustable, but a combination of graphene with noble-metal nanostructures promises a variety of exciting applications for conventional plasmonics. The versatility of graphene means that graphene-based plasmonics may enable the manufacture of novel optical devices working in different frequency ranges, from terahertz to the visible, with extremely high speed, low driving voltage, low power consumption and compact sizes. Here we review the field emerging at the intersection of graphene physics and plasmonics.Comment: Review article; 12 pages, 6 figures, 99 references (final version available only at publisher's web site

International Research Institute for Climate and Society

This report documents the process and results of the index insurance design effort leading to the index insurance contracts for Adi Ha in 2009. This report represents deliverables 1 and 2 in the terms of reference with Oxfam America, it outlines and compares analysis and design methodologies including the performance of rainfall simulators for index-based contract design. It also details contracts, methodologies, associated issues, and important lessons learned. A separate project report details the Experimental Games, deliverable 3 in the terms of reference. IRI has delivered contracts and methodology with a significant portion of the effort provided without cost to Oxfam America. This includes contributions from several external researchers who have contributed time at no cost. Substantial funders who have provided additional sponsorship include NOAA, NSF, (through its CRED DMUU center at Columbia), the Columbia Earth Institute postdoctoral program, the Columbia University Lamont postdoctoral program, and an Earth Institute CGSD seed grant. The insurance effort is one component of the Oxfam HARITA project, with the insurance designed to target key gaps left in the HARITA holistic climate risk management portfolio. Because this report focuses on the insurance contract design, it does not provide a comprehensive overview of the full climate risk management strategy, although it does refer to particular components in discussion of design issues. For a complete overview of the risk management and adaptation portfolio, the reader should refer to Oxfam HARITA project documentation. Many partners have participated substantially in the contract design effort. Major partners in this project include the Relief Society of Tigray (REST), Dedebit Credit and Savings Institution (DECSI), Nyala Insurance Company, the Ethiopian Productive Safety Net Program (PSNP), the Government of Ethiopian National Meteorological Agency (ENMA), Swiss Re, Mekele University, Oxfam Horn of Africa Regional Office, and Oxfam America (project coordinator). Any successes of this project depend strongly on the outstanding effort, skill, active engagement, and level of insights from the partners. Crop modeling parameters were obtained from LEAP and Mekele University. This project benefits strongly from groundwork and ongoing index insurance projects in Ethiopia and elsewhere by WFP and the World Bank CRMG

On-chip picosecond pulse detection and generation using graphene photoconductive switches

We report on the use of graphene for room temperature on-chip detection and generation of pulsed terahertz (THz) frequency radiation, exploiting the fast carrier dynamics of light-generated hot carriers, and compare our results with conventional low-temperature-grown gallium arsenide (LT-GaAs) photoconductive (PC) switches. Coupling of picosecond-duration pulses from a biased graphene PC switch into Goubau line waveguides is also demonstrated. A Drude transport model based on the transient photoconductance of graphene is used to describe the mechanism for both detection and generation of THz radiation

Optically tuned terahertz modulator based on annealed multilayer MoS2

Controlling the propagation properties of terahertz waves is very important in terahertz technologies applied in high-speed communication. Therefore a new-type optically tuned terahertz modulator based on multilayer-MoS 2 and silicon is experimentally demonstrated. The terahertz transmission could be significantly modulated by changing the power of the pumping laser. With an annealing treatment as a p-doping method, MoS 2 on silicon demonstrates a triple enhancement of terahertz modulation depth compared with the bare silicon. This MoS 2 -based device even exhibited much higher modulation efficiency than the graphene-based device. We also analyzed the mechanism of the modulation enhancement originated from annealed MoS 2, and found that it is different from that of graphene-based device. The unique optical modulating properties of the device exhibit tremendous promise for applications in terahertz switch