Using Gap Charts to Visualize the Temporal Evolution of Ranks and Scores

To address the limitations of traditional line chart approaches, in particular rank charts (RCs) and score charts (SCs), a novel class of line charts called gap charts (GCs) show entries that are ranked over time according to a performance metric. The main advantages of GCs are that entries never overlap (only changes in rank generate limited overlap between time steps) and gaps between entries show the magnitude of their score difference. The authors evaluate the effectiveness of GCs for performing different types of tasks and find that they outperform standard time-dependent ranking visualizations for tasks that involve identifying and understanding evolutions in both ranks and scores. They also show that GCs are a generic and scalable class of line charts by applying them to a variety of different datasets

Concept of a laser-plasma based electron source for sub-10 fs electron diffraction

We propose a new concept of an electron source for ultrafast electron diffraction with sub-10~fs temporal resolution. Electrons are generated in a laser-plasma accelerator, able to deliver femtosecond electron bunches at 5 MeV energy with kHz repetition rate. The possibility of producing this electron source is demonstrated using Particle-In-Cell simulations. We then use particle tracking simulations to show that this electron beam can be transported and manipulated in a realistic beamline, in order to reach parameters suitable for electron diffraction. The beamline consists of realistic static magnetic optics and introduces no temporal jitter. We demonstrate numerically that electron bunches with 5~fs duration and containing 1.5~fC per bunch can be produced, with a transverse coherence length exceeding 2~nm, as required for electron diffraction

Magnetic domain structure and dynamics in interacting ferromagnetic stacks with perpendicular anisotropy

The time and field dependence of the magnetic domain structure at magnetization reversal were investigated by Kerr microscopy in interacting ferromagnetic Co/Pt multilayers with perpendicular anisotropy. Large local inhomogeneous magnetostatic fields favor mirroring domain structures and domain decoration by rings of opposite magnetization. The long range nature of these magnetostatic interactions gives rise to ultra-slow dynamics even in zero applied field, i.e. it affects the long time domain stability. Due to this additionnal interaction field, the magnetization reversal under short magnetic field pulses differs markedly from the well-known slow dynamic behavior. Namely, in high field, the magnetization of the coupled harder layer has been observed to reverse more rapidly by domain wall motion than the softer layer alone.Comment: 42 pages including 17 figures. submitted to JA

Current Induced Fingering Instability in Magnetic Domain Walls

The shape instability of magnetic domain walls under current is investigated in a ferromagnetic (Ga,Mn)(As,P) film with perpendicular anisotropy. Domain wall motion is driven by the spin transfer torque mechanism. A current density gradient is found either to stabilize domains with walls perpendicular to current lines or to produce finger-like patterns, depending on the domain wall motion direction. The instability mechanism is shown to result from the non-adiabatic contribution of the spin transfer torque mechanism.Comment: 5 pages, 3 figures + supplementary material

Magnetic patterning of (Ga,Mn)As by hydrogen passivation

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer

Functions of Phenylalanine Residues within the β-Barrel Stem of the Anthrax Toxin Pore

Background: A key step of anthrax toxin action involves the formation of a protein-translocating pore within the endosomal membrane by the Protective Antigen (PA) moiety. Formation of this transmembrane pore by PA involves interaction of the seven 2b2–2b3 loops of the heptameric precursor to generate a 14-strand transmembrane b barrel. Methodology/Principal Findings: We examined the effects on pore formation, protein translocation, and cytotoxicity, of mutating two phenylalanines, F313 and F314, that lie at the tip the b barrel, and a third one, F324, that lies part way up the barrel. Conclusions/Significance: Our results show that the function of these phenylalanine residues is to mediate membrane insertion and formation of stable transmembrane channels. Unlike F427, a key luminal residue in the cap of the pore, F313, F314, and F324 do not directly affect protein translocation through the pore. Our findings add to our knowledge of structure-function relationships of a key virulence factor of the anthrax bacillus