Tailoring the surface density of silicon nanocrystals embedded in SiOx single layers

In this article, we explore the possibility of modifying the silicon nanocrystal areal density in SiOx single layers, while keeping constant their size. For this purpose, a set of SiOx monolayers with controlled thickness between two thick SiO2 layers has been fabricated, for four different compositions (x=1, 1.25, 1.5, or 1.75). The structural properties of the SiO x single layers have been analyzed by transmission electron microscopy (TEM) in planar view geometry. Energy-filtered TEM images revealed an almost constant Si-cluster size and a slight increase in the cluster areal density as the silicon content increases in the layers, while high resolution TEM images show that the size of the Si crystalline precipitates largely decreases as the SiO x stoichiometry approaches that of SiO2. The crystalline fraction was evaluated by combining the results from both techniques, finding a crystallinity reduction from 75% to 40%, for x = 1 and 1.75, respectively. Complementary photoluminescence measurements corroborate the precipitation of Si-nanocrystals with excellent emission properties for layers with the largest amount of excess silicon. The integrated emission from the nanoaggregates perfectly scales with their crystalline state, with no detectable emission for crystalline fractions below 40%. The combination of the structural and luminescence observations suggests that small Si precipitates are submitted to a higher compressive local stress applied by the SiO2 matrix that could inhibit the phase separation and, in turn, promotes the creation of nonradiative paths

A new self-expanding aortic stent valve with annular fixation: in vitro haemodynamic assessment

Objective: Balloon-expandable stent valves require flow reduction during implantation (rapid pacing). The present study was designed to compare a self-expanding stent valve with annular fixation versus a balloon-expandable stent valve. Methods: Implantation of a new self-expanding stent valve with annular fixation (Symetis®, Lausanne, Switzerland) was assessed versus balloon-expandable stent valve, in a modified Dynatek Dalta® pulse duplicator (sealed port access to the ventricle for transapical route simulation), interfaced with a computer for digital readout, carrying a 25 mm porcine aortic valve. The cardiovascular simulator was programmed to mimic an elderly woman with aortic stenosis: 120/85 mmHg aortic pressure, 60 strokes/min (66.5 ml), 35% systole (2.8 l/min). Results: A total of 450 cardiac cycles was analysed. Stepwise expansion of the self-expanding stent valve with annular fixation (balloon-expandable stent valve) resulted in systolic ventricular increase from 120 to 121 mmHg (126 to 830 ± 76 mmHg)*, and left ventricular outflow obstruction with mean transvalvular gradient of 11 ± 1.5 mmHg (366 ± 202 mmHg)*, systolic aortic pressure dropped distal to the valve from 121 to 64.5 ± 2 mmHg (123 to 55 ± 30 mmHg) N.S., and output collapsed to 1.9 ± 0.06 l/min (0.71 ± 0.37 l/min* (before complete obstruction)). No valve migration occurred in either group. (* = p < 0.05). Conclusions: Implantation of this new self-expanding stent valve with annular fixation has little impact on haemodynamics and has the potential for working heart implantation in vivo. Flow reduction (rapid pacing) is not necessar

Local hydrogen environments in Gd 1− x Fe x thin films amorphous alloys from effusion experiments

International audienceThin films of hydrogenated Gd,-XFeX (0.25 =%< 0.90) amorphous-alloys were prepared by reactive evaporation. Effusion experiments, showing several hydrogen release peaks, allowed us to describe the site distribution of hydrogen in these alloys. The different local environments correspond to tetrahedral sites and the stability of these sites increases with the number of rare-earth neighbors

Visible photoluminescence in amorphous SiNx thin films prepared by reactive evaporation

International audiencePhotoluminescence in the visible domain can be observed in amorphous silicon nitride (a-SiN x) alloys prepared by evaporation of silicon under a flow of nitrogen ions. A strong improvement of the photoluminescence intensity was obtained with annealing treatments in the range 500-1150 °C. Structural investigations were performed by infrared and Raman spectrometry experiments. The optical gap was obtained from transmission measurements in the ultraviolet, visible, and near infrared range. The evolutions of the structure and the optical properties with annealing treatments are correlated to the evolution of the photoluminescence

Evidence of light-emitting amorphous silicon clusters confined in a silicon oxide matrix

International audienceAmorphous silicon oxide thin films were prepared by the coevaporation technique in ultrahigh vacuum. Different compositions were obtained by changing the evaporation rate of silicon. The samples were then annealed to different temperatures up to 950°C. The composition and the structure were investigated using energy dispersive x-ray spectroscopy, infrared absorption measurements, and Raman spectroscopy. This study attests the presence of amorphous silicon clusters in a silicon oxide matrix. Optical transmission measurements were performed and interpreted in the field of the composite medium theory. The obtained results are in good agreement with the presented structural model. The photoluminescence in the red-orange domain was studied in relation with the structure. The correlation between the photoluminescence energy and intensity and the structure shows that the light emission originates from the silicon clusters embedded in the silicon oxide matrix. Moreover the dependence of the photoluminescence energy with the silicon volume fraction suggests the origin of the light emission could be due to a quantum confinement effect of carriers in the amorphous silicon clusters

Improvement of the photoluminescence properties in a-SiNx films by introduction of hydrogen

International audiencePhotoluminescence properties of amorphous hydrogenated silicon nitride thin films with various compositions are presented. The as-deposited samples prepared by evaporation of silicon under a flow of nitrogen and hydrogen ions exhibit visible photoluminescence at room temperature without any annealing treatment. The evolution of the photoluminescence properties with increasing nitrogen concentration in the films is correlated to structural investigations performed with Fourier-transform infrared spectroscopy and optical characterization obtained from transmission measurements in the ultraviolet-visible-near-infrared range. It is shown that the introduction of hydrogen is of prime importance to improve the photoluminescence intensity of the films

Tunneling giant magnetoresistance in coevaporated Fex(SiO)1−x thin films

International audienceFe x (SiO) 1x thin films, with volume fraction x ranging from 0.04 to 0.6, have been prepared by coevaporation. Magnetization, resistivity, and magnetoresistance measurements show that the behavior of this composite is metallic like for x0.35. For 0.2x0.27, the confrontation of all measurements prove the existence of a tunneling giant magnetoresistance between ferromagnetic grains at T300 K, where the mean radius of the grains is estimated to be about 1 nm

Photoluminescence properties of size-controlled silicon nanocrystals at low temperatures

International audienceThis study attempts to clarify the origin of the temperature dependence of the photoluminescence ͑PL͒ spectra of silicon nanocrystals ͑Si-ncs͒ embedded in SiO 2 from 5 to 300 K. For this purpose, size-controlled Si-ncs with a narrow size distribution were fabricated, using the SiO/ SiO 2 multilayer structure. The PL intensity is strongly temperature dependent and presents a maximum at around 70 K, depending on the Si-nc size and on the excitation power. The origin of this maximum is first discussed thanks to PL dynamics study and power dependence study. The evolution of the PL energy with temperature is also discussed. In bulk semiconductors the temperature dependence of the gap is generally well represented by Varshni's law. Taking into account the quantum confinement energy, the PL energy of Si-ncs follows very well this law in the range 50-300 K. Below 50 K, a strong discrepancy to this law is observed characterized by a strong increase in the PL energy at low temperature, which is dependent on the Si-nc size distribution. This temperature dependence of the PL energy is correlated with a decrease in the radiative rate at low temperature and is explained by a preferential saturation effect of the bigger Si-ncs

1.54μm photoluminescence of Er-doped GeOx thin films

International audienceAmorphous Er-doped GeO x alloys were prepared by evaporation on substrates maintained at 100°C. Photoluminescence experiments were carried out in the visible and near-infrared ranges. The Er-related peak was observed at 1.54 m at room temperature in the as deposited samples. The PL of erbium is characterized by a weak temperature quenching and by a decay time in the millisecond range. The luminescence of Er is a decreasing function of the annealing temperature. Undoped GeO x layers showed a PL band at 800 nm, attributed to defects states, which disappeared when Er is introduced. The intense Er-related luminescence was assigned to an indirect excitation process from defects states to Er ions

Low-temperature photoluminescence properties of Nd-doped silicon oxide thin films containing silicon nanocrystals

International audienceThe luminescence properties of neodymium-doped silicon oxide thin films containing silicon nanocrystals (Si-nc) were studied as a function of temperature from 10 to 300 K by steady-state and time-resolved photoluminescence (PL) spectrometry. The Nd-related emission at 920 nm, induced by the 4F3/2→4I9/2 shell transitions, was obtained either with a resonant excitation at 585 nm or with an indirect excitation at 325 nm via Si-nc, which act as sensitizers. A saturation of the neodymium-related photoluminescence intensity has been evidenced for indirect excitation thanks to silicon nanocrystals at temperatures below 100 K. According to the Förster model of energy transfer, this saturation is explained by a decrease of the coupling efficiency between Si-nc and rare earth ions at low temperatures, induced by the increase of the silicon nanocrystals lifetime at low temperatures