24 research outputs found
Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential
Cd1-xZnxTe (CZT) crystals are the leading semiconductors for radiation
detection, but their application is limited by the high cost of detector-grade
materials. High crystal costs primarily result from property non-uniformity
that causes low manufacturing yield. While tremendous efforts have been made in
the past to reduce Te inclusions / precipitates in CZT, this has not resulted
in an anticipated improvement in material property uniformity. Moreover, it is
recognized that in addition to Te particles, dislocation cells can also cause
electric field perturbation and the associated property non-uniformity. Further
improvement of the material, therefore, requires that dislocations in CZT
crystals be understood and controlled. Here we use a recently developed CZT
bond order potential to perform representative molecular dynamics simulations
to study configurations, energies, and mobilities of 29 different types of
possible dislocations in CdTe (i.e., x = 1) crystals. An efficient method to
derive activation free energies and activation volumes of thermally activated
dislocation motion will be explored. Our focus gives insight into understanding
important dislocations in the material, and gives guidance toward experimental
efforts for improving dislocation network structures in CZT crystals
On the influence of indium addition on the mechanical properties of gallium arsenide at room temperature
Indentations have been performed on (001) faces of indium alloyed GaAs crystals in
darkness and under infrared illumination. The Vickers hardness was measured and the
dislocation microstructure around the indents observed by high voltage
transmission electron microscopy. A softening effect of indium is evidenced by
comparison with the Vickers hardness obtained in the same conditions on undoped
GaAs. No significant influence of indium on the dislocation microstructure resulting
from indentation in darkness is noted. Indentation under infrared illumination does not
reveal any macroscopic photoplastic effect; however, a modification of dislocation
microstructure is observed. Whatever the experimental conditions, dislocations appear
to experience strong lattice friction. The softening effect of indium addition and the
enhanced dislocation mobilities under infrared illumination are discussed in the
framework of dislocation glide governed by the Peierls mechanism
EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS
Quantitative features of the enhancement effect by either laser light illumination or electron irradiation on the dislocation motion in semiconductors are surveyed. The experiments show that moving dislocations experience a lattice friction which is lowered under excitation. Theoretical analysis based on the kink diffusion model for dislocation motion indicates that the observed reduction in activation energy corresponds to the electronic energy level in the band gap associated with the straight dislocation sites
Peiling biologie in de eerste graad secundair onderwijs (A-stroom) - Eindrapport
see also http://www.ond.vlaanderen.be/dvo/peilingen/secundair/brochure_peiling_biologie.pdfstatus: publishe
In situ TEM study of dislocation mobility in semiconducting materials
In situ straining experiments have been conducted in Toulouse and Grenoble on elemental semiconductors, III-V and II-VI compounds. This article gives a common interpretation of the results obtained, which allows us to discuss the effect of the strength of covalent bonding on the mobility of dislocations under different conditions.Des expériences de déformation in situ de semiconducteurs élémentaires, et de composés III-V et II-VI, ont été réalisées à Toulouse et Grenoble. Cet article donne une interprétation commune des résultats obtenus, ce qui permet de discuter l'effet de la force des liaisons covalentes sur les mobilités des dislocations dans divers cas de figure