European Journal of Combinatorics Index, Volume 27

BACKGROUND: Diabetes is an inflammatory condition associated with iron abnormalities and increased oxidative damage. We aimed to investigate how diabetes affects the interrelationships between these pathogenic mechanisms. METHODS: Glycaemic control, serum iron, proteins involved in iron homeostasis, global antioxidant capacity and levels of antioxidants and peroxidation products were measured in 39 type 1 and 67 type 2 diabetic patients and 100 control subjects. RESULTS: Although serum iron was lower in diabetes, serum ferritin was elevated in type 2 diabetes (p = 0.02). This increase was not related to inflammation (C-reactive protein) but inversely correlated with soluble transferrin receptors (r = - 0.38, p = 0.002). Haptoglobin was higher in both type 1 and type 2 diabetes (p &lt; 0.001) and haemopexin was higher in type 2 diabetes (p &lt; 0.001). The relation between C-reactive protein and haemopexin was lost in type 2 diabetes (r = 0.15, p = 0.27 vs r = 0.63, p &lt; 0.001 in type 1 diabetes and r = 0.36, p = 0.001 in controls). Haemopexin levels were independently determined by triacylglycerol (R(2) = 0.43) and the diabetic state (R(2) = 0.13). Regarding oxidative stress status, lower antioxidant concentrations were found for retinol and uric acid in type 1 diabetes, alpha-tocopherol and ascorbate in type 2 diabetes and protein thiols in both types. These decreases were partially explained by metabolic-, inflammatory- and iron alterations. An additional independent effect of the diabetic state on the oxidative stress status could be identified (R(2) = 0.5-0.14). CONCLUSIONS: Circulating proteins, body iron stores, inflammation, oxidative stress and their interrelationships are abnormal in patients with diabetes and differ between type 1 and type 2 diabetes</p

Direct environmental lead detection by photoluminescent perovskite formation with nanogram sensitivity

Although the global ban on leaded gasoline has markedly reduced lead poisoning, many other environmental sources of lead exposure, such as paint, pipes, mines, and recycling sites remain. Existing methods to identify these sources are either costly or unreliable. We report here a new, sensitive, and inexpensive lead detection method that relies on the formation of a perovskite semiconductor. The method only requires spraying the material of interest with methylammonium bromide and observing whether photoluminesence occurs under UV light to indicate the presence of lead. The method detects as little as 1.0 ng/mm2 of lead by the naked eye and 50 pg/mm2 using a digital photo camera. We exposed more than 50 different materials to our reagent and found no false negatives or false positives. The method readily detects lead in soil, paint, glazing, cables, glass, plastics, and dust and could be widely used for testing the environment and preventing lead poisoning

Demonstration of silicon-on-insulator mid-infrared spectrometers operating at 3.8µm

The design and characterization of silicon-on-insulator mid- infrared spectrometers operating at 3.8µm is reported. The devices are fabricated on 200mm SOI wafers in a CMOS pilot line. Both arrayed waveguide grating structures and planar concave grating structures were designed and tested. Low insertion loss (1.5-2.5dB) and good crosstalk characteristics (15-20dB) are demonstrated, together with waveguide propagation losses in the range of 3 to 6dB/cm

8x14Gb/s ring WDM modulator array with integrated tungsten heaters and Ge monitor photodetectors

An 8x14Gb/s wavelength-division multiplexed Si ring modulator array is presented with uniform channel performance. Tungsten heaters and Ge monitor photodetectors at the ring modulator drop ports are co-integrated to track and control the modulation quality

Optical interconnect with densely integrated plasmonic modulator and germanium photodetector arrays

We demonstrate the first chip-to-chip interconnect utilizing a densely integrated plasmonic Mach-Zehnder modulator array operating at 3 x 10 Gbit/s. A multicore fiber provides a compact optical interface, while the receiver consists of germanium photodetectors

A 160Gb/s (4x40) WDM O-band Tx subassembly using a 4-ch array of silicon rings co-packaged with a SiGe BiCMOS IC driver

We present a 400 (8×50) Gb/s-capable RM-based Si-photonic WDM O-band TxRx with 1.17nm channel spacing for high-speed optical interconnects and demonstrate successful 50Gb/s-NRZ TxRx operation achieving a ~4.5dB Tx extinction ratio under 2.15Vpp drive

Optical interconnect solution with plasmonic modulator and Ge photodetector array

We report on an optical chip-to-chip interconnect solution, thereby demonstrating plasmonics as a solution for ultra-dense, high-speed short-reach communications. The interconnect comprises a densely integrated plasmonic Mach-Zehnder modulator array that is packaged with standard driving electronics. On the receiver side, a germanium photodetector array is integrated with trans-impedance amplifiers. A multicore fiber provides a compact optical interface to the array. We demonstrate 4 × 20 Gb/s on-off keying signaling with direct detection.ISSN:1041-1135ISSN:1941-017

Chirp management in silicon-graphene electro absorption modulators

We study the frequency chirp properties of graphene-on-silicon electro-absorption modulators (EAMs). By experimentally measuring the chirp of a 100 \ub5m long single layer graphene EAM, we show that the optoelectronic properties of graphene induce a large positive linear chirp on the optical signal generated by the modulator, giving rise to a maximum shift of the instantaneous frequency up to 1.8 GHz. We exploit this peculiar feature for chromatic-dispersion compensation in fiber optic transmission thanks to the pulse temporal lensing effect. In particular, we show dispersion compensation in a 10Gb/s transmission experiment on standard single mode fiber with temporal focusing distance (0-dB optical-signal-to-noise ratio penalty) of 60 km, and also demonstrate 100 km transmission with a bit error rate largely lower than the conventional Reed-Solomon forward error correction threshold of 10 123

Highly uniform and low-loss passive silicon photonics devices using a 300mm CMOS platform

Using an advanced 300mm CMOS-platform, we report record-low and highly-uniform propagation loss: 0.45 +/- 0.12dB/cm for wires, and 2dB/cm for slot waveguides. For WDM devices, we demonstrate channel variation(3-sigma) within-wafer and within-device of 6.1nm and 1.2nm respectively