5 research outputs found
Field effect enhancement in buffered quantum nanowire networks
III-V semiconductor nanowires have shown great potential in various quantum
transport experiments. However, realizing a scalable high-quality
nanowire-based platform that could lead to quantum information applications has
been challenging. Here, we study the potential of selective area growth by
molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer
layers. The buffered geometry allows for substantial elastic strain relaxation
and a strong enhancement of field effect mobility. We show that the networks
possess strong spin-orbit interaction and long phase coherence lengths with a
temperature dependence indicating ballistic transport. With these findings, and
the compatibility of the growth method with hybrid epitaxy, we conclude that
the material platform fulfills the requirements for a wide range of quantum
experiments and applications
Optimization of the nanoplasmonic hybridization process for the enhancement of the optical response of single-walled carbon nanotubes
Here we present our results on the optimization of a nanometallic-carbon
nanotubes plasmonic hybridization process to enhance the photoluminescence quantum
yield of single walled carbon nanotubes. Swelling the micelles containing the hybrids
through an organic solvent improves the matching between the hybrids constituents; the
optimized hybrids exhibit enhancement of the emitted photoluminescence without affecting
the physical mechanisms involved in the exciton-plasmon coupling process
Semiconductor-Ferromagnetic Insulator-Superconductor Nanowires:Stray Field and Exchange Field
Nanowires can serve as flexible substrates for hybrid epitaxial growth on
selected facets, allowing for design of heterostructures with complex material
combinations and geometries. In this work we report on hybrid epitaxy of
semiconductor - ferromagnetic insulator - superconductor (InAs/EuS/Al) nanowire
heterostructures. We study the crystal growth and complex epitaxial matching of
wurtzite InAs / rock-salt EuS interfaces as well as rock-salt EuS /
face-centered cubic Al interfaces. Because of the magnetic anisotropy
originating from the nanowire shape, the magnetic structure of the EuS phase
are easily tuned into single magnetic domains. This effect efficiently ejects
the stray field lines along the nanowires. With tunnel spectroscopy
measurements of the density of states, we show the material has a hard induced
superconducting gap, and magnetic hysteretic evolution which indicates that the
magnetic exchange fields are not negligible. These hybrid nanowires fulfil key
material requirements for serving as a platform for spin-based quantum
applications, such as scalable topological quantum computing.Comment: 15 pages, 5 figure
Field effect enhancement in buffered quantum nanowire networks
arXiv:1802.07808v2III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. Here, we study the potential of selective area growth by molecular beam epitaxy of InAs nanowire networks grown on GaAs-based buffer layers, where Sb is used as a surfactant. The buffered geometry allows for substantial elastic strain relaxation and a strong enhancement of field effect mobility. We show that the networks possess strong spin-orbit interaction and long phase-coherence lengths with a temperature dependence indicating ballistic transport. With these findings, and the compatibility of the growth method with hybrid epitaxy, we conclude that the material platform fulfills the requirements for a wide range of quantum experiments and applications.The project was supported by Microsoft Station Q, the European Research Council (ERC) under the
grant agreement No.716655 (HEMs-DAM), the European Union Horizon 2020 research and innovation program under the Marie Skłodowska-Curie grant agreement No 722176, the Danish National Science Research Foundation and the Villum Foundation. SMS acknowledges funding from >Programa Internacional de Becas >la Caixa>-Severo Ochoa>. JA and SMS also acknowledge funding from Generalitat de Catalunya 2017 SGR 327. ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, Grant no. SEV-2013-0295) and is funded by the CERCA Programme
/ Generalitat de Catalunya