Reactive Spreading of a Lead-Free Solder on Alumina

The wetting of Sn3Ag-based alloys on Al{sub 2}O{sub 3} has been studied using the sessile-drop configuration. Small additions of Ti decrease the contact angle of Sn3Ag alloys on alumina from 115 to 23 degrees. Adsorption of Ti-species at the solid-liquid interface prior to reaction is the driving force for the observed decrease in contact angle, and the spreading kinetics is controlled by the kinetics of Ti dissolution into the molten alloy. The addition of Ti increases the transport rates at the solid-liquid interface, resulting in the formation of triple-line ridges that pin the liquid front and promote a wide variability in the final contact angles

Role of titanium on the reactive spreading of lead-free solders on alumina

International audienc

Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation

In this article we discuss open questions in electronic sputtering of solids by slow, highly charged ions in the context of their application in a single ion implantation scheme. High yields of secondary electrons emitted when highly charged dopant ions impinge on silicon wafers allow for formation of non-Poissonian implant structures such as single atom arrays. Control of high spatial resolution and implant alignment require the use of nanometer scale apertures. We discuss electronic sputtering issues on mask lifetimes, and damage to silicon wafers