45 research outputs found
Seed Layer Assisted Hydrothermal Deposition of Low-resistivity ZnO Thin Films
In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer. Copyright Β© Materials Research Society 2017
Π€ΠΠ ΠΠΠ ΠΠΠΠΠΠ Π’ΠΠΠΠΠ₯ ΠΠΠΠΠΠ ΠΠΠ‘ΠΠΠ Π¦ΠΠΠΠ ΠΠΠΠΠΠΠΠ ΠΠΠΠΠΠ«Π ΠΠΠ’ΠΠΠΠ ΠΠΠΠ ΠΠ’ΠΠ ΠΠΠΠ¬ΠΠΠΠ Π ΠΠΠ‘ΠΠΠΠΠΠΠ ΠΠ’ΠΠΠΠΠΠ ΠΠ‘ΠΠΠΠΠΠΠ―
Properties and deposition of continuous thin zinc oxide films by chemical on the monocrystalline silicon substrates with zinc oxide seed layer formed by atomic layer deposition are studied. Obtained hybrid zinc oxide structures consist of vertically oriented crystallites packed in uniform continuous film. Optical and electrical properties of the films are measured. It is shown, that deposited zinc oxide films demonstrate photoluminescence in the visible range of electromagnetic spectra with maximum at 600-700 nm. Luminescence band in the near UV region at 380 nm, associated with band-to-band radiative recombination, is also measured. The resistivity of the obtained zinc oxide films is about 0.7 OhmΒ·cm.ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΡΠ²ΠΎΠΉΡΡΠ²Π° ΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½Π° Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ
ΡΠΏΠ»ΠΎΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ° Ρ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΈΠΌ Π³ΠΈΠ΄ΡΠΎΡΠ΅ΡΠΌΠ°Π»ΡΠ½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ ΠΏΠΎΠ΄Π»ΠΎΠΆΠ΅ΠΊ ΠΌΠΎΠ½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Ρ Π·Π°ΡΡΠ°Π²ΠΎΡΠ½ΡΠΌ ΡΠ»ΠΎΠ΅ΠΌ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ°, ΡΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΏΠΎΡΠ»ΠΎΠΉΠ½ΠΎΠ³ΠΎ Π°ΡΠΎΠΌΠ½ΠΎΠ³ΠΎ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΡ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π³ΠΈΠ±ΡΠΈΠ΄Π½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΈΠ· ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ° ΡΠΎΡΡΠΎΡΡ ΠΈΠ· Π²Π΅ΡΡΠΈΠΊΠ°Π»ΡΠ½ΠΎ ΠΎΡΠΈΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠΎΠ² ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ°, ΠΎΠ±ΡΠ°Π·ΡΡΡΠΈΡ
ΠΊΠΎΠΌΠΏΠ°ΠΊΡΠ½ΡΡ ΡΠΏΠ»ΠΎΡΠ½ΡΡ ΠΏΠ»Π΅Π½ΠΊΡ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ² ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠ»Π΅Π½ΠΊΠΈ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ° Π΄Π΅ΠΌΠΎΠ½ΡΡΡΠΈΡΡΡΡ ΡΠΎΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ Π² Π²ΠΈΠ΄ΠΈΠΌΠΎΠΌ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΠΏΠ΅ΠΊΡΡΠ° Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ Π½Π° Π΄Π»ΠΈΠ½Π΅ Π²ΠΎΠ»Π½Ρ 600-700 Π½ΠΌ, ΡΠ²ΡΠ·Π°Π½Π½ΡΡ Ρ Π½Π°Π»ΠΈΡΠΈΠ΅ΠΌ ΡΡΡΡΠΊΡΡΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ², ΠΈ Π² Π±Π»ΠΈΠΆΠ½Π΅ΠΌ Π£Π€-Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ ΠΎΠΊΠΎΠ»ΠΎ 380 Π½ΠΌ, ΡΠ²ΡΠ·Π°Π½Π½ΡΡ Ρ ΠΈΠ·Π»ΡΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ ΠΌΠ΅ΠΆΠ·ΠΎΠ½Π½ΠΎΠΉ ΡΠ΅ΠΊΠΎΠΌΠ±ΠΈΠ½Π°ΡΠΈΠ΅ΠΉ. Π£Π΄Π΅Π»ΡΠ½ΠΎΠ΅ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΎΡΡΠ°Π²Π»ΡΠ΅Ρ 0,7 ΠΠΌΒ·ΡΠΌ
Both loved and feared: third party punishers are viewed as formidable and likeable, but these reputational benefits may only be open to dominant individuals
Journal ArticleResearch Support, Non-U.S. Gov'tCopyright: Β© 2014 Gordon et al.The datasets associated with this article are available in ORE at http://hdl.handle.net/10871/15639Third party punishment can be evolutionarily stable if there is heterogeneity in the cost of punishment or if punishers receive a reputational benefit from their actions. A dominant position might allow some individuals to punish at a lower cost than others and by doing so access these reputational benefits. Three vignette-based studies measured participants' judgements of a third party punisher in comparison to those exhibiting other aggressive/dominant behaviours (Study 1), when there was variation in the success of punishment (Study 2), and variation in the status of the punisher and the type of punishment used (Study 3). Third party punishers were judged to be more likeable than (but equally dominant as) those who engaged in other types of dominant behaviour (Study 1), were judged to be equally likeable and dominant whether their intervention succeeded or failed (Study 2), and participants believed that only a dominant punisher could intervene successfully (regardless of whether punishment was violent or non-violent) and that subordinate punishers would face a higher risk of retaliation (Study 3). The results suggest that dominance can dramatically reduce the cost of punishment, and that while individuals can gain a great deal of reputational benefit from engaging in third party punishment, these benefits are only open to dominant individuals. Taking the status of punishers into account may therefore help explain the evolution of third party punishment.School of Psychology, University of Exete
The Great American Crime Decline : Possible Explanations
This chapter examines the most important features of the crime decline in the United States during the 1990s-2010s but also takes a broader look at the violence declines of the last three centuries. The author argues that violent and property crime trends might have diverged in the 1990s, with property crimes increasingly happening in the online sphere and thus traditional property crime statistics not being reflective of the full picture. An important distinction is made between βcontact crimesβ and crimes that do not require a victim and offender to be present in the same physical space. Contrary to the uncertainties engendered by property crime, the declines in violent (βcontactβ) crime are rather general, and have been happening not only across all demographic and geographic categories within the United States but also throughout the developed world. An analysis of research literature on crime trends has identified twenty-four different explanations for the crime drop. Each one of them is briefly outlined and examined in terms of conceptual clarity and empirical support. Nine crime decline explanations are highlighted as the most promising ones. The majority of these promising explanations, being relative newcomers in the crime trends literature, have not been subjected to sufficient empirical scrutiny yet, and thus require further research. One potentially fruitful avenue for future studies is to examine the association of the most promising crime decline explanations with improvements in self-control
Formation OF ZINC OXIDE THIN FILMS BY COMBINED METHOD OF HYDROTHERMAL AND LAYERED ATOM DEPOSITION
Properties and deposition of continuous thin zinc oxide films by chemical on the monocrystalline silicon substrates with zinc oxide seed layer formed by atomic layer deposition are studied. Obtained hybrid zinc oxide structures consist of vertically oriented crystallites packed in uniform continuous film. Optical and electrical properties of the films are measured. It is shown, that deposited zinc oxide films demonstrate photoluminescence in the visible range of electromagnetic spectra with maximum at 600-700 nm. Luminescence band in the near UV region at 380 nm, associated with band-to-band radiative recombination, is also measured. The resistivity of the obtained zinc oxide films is about 0.7 OhmΒ·cm
Seed layer assisted hydrothermal deposition of low-resistivity ZnO thin films
In this work, we describe the combination of hydrothermal and atomic layer deposition (ALD) for growing low-resistivity ZnO polycrystalline continuous films. The effect of the thickness of ALD seed layers on the morphology of the hydrothermal ZnO films was studied. It was shown that ZnO films hydrothermally deposited on very thin seed layer consist of separate nanorods but in the case of 20 nm seed layer ZnO films transform to uniform continuous layers comprising of closely packed vertically aligned crystallites. Photoluminescence spectra were shown to exhibit broad band behavior in the visible range, corresponding to radiative recombination processes via oxygen defects of ZnO crystalline lattice, and narrow band in the UV region, associated with band-to-band recombination processes. It was shown that the resistivity of the obtained ZnO films is decreased gradually with the increase of ZnO films thickness and determined by the presence of crystal lattice defects in the seed layer
Formation of zinc oxide thin films by combined method of hydrothermal and layered atom deposition
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΡΠ²ΠΎΠΉΡΡΠ²Π° ΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½Π° Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ
ΡΠΏΠ»ΠΎΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΎΠΊΡΠΈΠ΄Π°
ΡΠΈΠ½ΠΊΠ° Ρ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΈΠΌ Π³ΠΈΠ΄ΡΠΎΡΠ΅ΡΠΌΠ°Π»ΡΠ½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ ΠΏΠΎΠ΄Π»ΠΎΠΆΠ΅ΠΊ
ΠΌΠΎΠ½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Ρ Π·Π°ΡΡΠ°Π²ΠΎΡΠ½ΡΠΌ ΡΠ»ΠΎΠ΅ΠΌ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ°, ΡΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΡΠΌ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΏΠΎΡΠ»ΠΎΠΉΠ½ΠΎΠ³ΠΎ Π°ΡΠΎΠΌΠ½ΠΎΠ³ΠΎ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΡ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π³ΠΈΠ±ΡΠΈΠ΄Π½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΈΠ· ΠΎΠΊΡΠΈΠ΄Π°
ΡΠΈΠ½ΠΊΠ° ΡΠΎΡΡΠΎΡΡ ΠΈΠ· Π²Π΅ΡΡΠΈΠΊΠ°Π»ΡΠ½ΠΎ ΠΎΡΠΈΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠΎΠ² ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ°, ΠΎΠ±ΡΠ°Π·ΡΡΡΠΈΡ
ΠΊΠΎΠΌΠΏΠ°ΠΊΡΠ½ΡΡ ΡΠΏΠ»ΠΎΡΠ½ΡΡ ΠΏΠ»Π΅Π½ΠΊΡ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ²
ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠ»Π΅Π½ΠΊΠΈ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ° Π΄Π΅ΠΌΠΎΠ½ΡΡΡΠΈΡΡΡΡ
ΡΠΎΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ Π² Π²ΠΈΠ΄ΠΈΠΌΠΎΠΌ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΠΏΠ΅ΠΊΡΡΠ° Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ Π½Π°
Π΄Π»ΠΈΠ½Π΅ Π²ΠΎΠ»Π½Ρ 600β700 Π½ΠΌ, ΡΠ²ΡΠ·Π°Π½Π½ΡΡ Ρ Π½Π°Π»ΠΈΡΠΈΠ΅ΠΌ ΡΡΡΡΠΊΡΡΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ², ΠΈ Π² Π±Π»ΠΈΠΆΠ½Π΅ΠΌ Π£Π€-
Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ ΠΎΠΊΠΎΠ»ΠΎ 380 Π½ΠΌ, ΡΠ²ΡΠ·Π°Π½Π½ΡΡ Ρ ΠΈΠ·Π»ΡΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ ΠΌΠ΅ΠΆΠ·ΠΎΠ½Π½ΠΎΠΉ
ΡΠ΅ΠΊΠΎΠΌΠ±ΠΈΠ½Π°ΡΠΈΠ΅ΠΉ. Π£Π΄Π΅Π»ΡΠ½ΠΎΠ΅ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΎΡΡΠ°Π²Π»ΡΠ΅Ρ 0,7 ΠΠΌΒ·ΡΠΌ.Properties and deposition of continuous thin zinc oxide films by chemical on the
monocrystalline silicon substrates with zinc oxide seed layer formed by atomic layer deposition are
studied. Obtained hybrid zinc oxide structures consist of vertically oriented crystallites packed in
uniform continuous film. Optical and electrical properties of the films are measured. It is shown, that
deposited zinc oxide films demonstrate photoluminescence in the visible range of electromagnetic
spectra with maximum at 600β700 nm. Luminescence band in the near UV region at 380 nm, associated
with band-to-band radiative recombination, is also measured. The resistivity of the obtained zinc oxide
films is about 0.7 OhmΒ·cm
Formation of zinc oxide thin films by combined method of hydrothermal and layered atom deposition
ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΡΠ²ΠΎΠΉΡΡΠ²Π° ΠΈ ΠΏΠΎΠΊΠ°Π·Π°Π½Π° Π²ΠΎΠ·ΠΌΠΎΠΆΠ½ΠΎΡΡΡ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ ΡΠΎΠ½ΠΊΠΈΡ
ΡΠΏΠ»ΠΎΡΠ½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΠΎΠΊΡΠΈΠ΄Π°
ΡΠΈΠ½ΠΊΠ° Ρ
ΠΈΠΌΠΈΡΠ΅ΡΠΊΠΈΠΌ Π³ΠΈΠ΄ΡΠΎΡΠ΅ΡΠΌΠ°Π»ΡΠ½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ Π½Π° ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠΈ ΠΏΠΎΠ΄Π»ΠΎΠΆΠ΅ΠΊ
ΠΌΠΎΠ½ΠΎΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠ΅ΡΠΊΠΎΠ³ΠΎ ΠΊΡΠ΅ΠΌΠ½ΠΈΡ Ρ Π·Π°ΡΡΠ°Π²ΠΎΡΠ½ΡΠΌ ΡΠ»ΠΎΠ΅ΠΌ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ°, ΡΡΠΎΡΠΌΠΈΡΠΎΠ²Π°Π½Π½ΡΠΌ
ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ ΠΏΠΎΡΠ»ΠΎΠΉΠ½ΠΎΠ³ΠΎ Π°ΡΠΎΠΌΠ½ΠΎΠ³ΠΎ ΠΎΡΠ°ΠΆΠ΄Π΅Π½ΠΈΡ. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π³ΠΈΠ±ΡΠΈΠ΄Π½ΡΠ΅ ΡΡΡΡΠΊΡΡΡΡ ΠΈΠ· ΠΎΠΊΡΠΈΠ΄Π°
ΡΠΈΠ½ΠΊΠ° ΡΠΎΡΡΠΎΡΡ ΠΈΠ· Π²Π΅ΡΡΠΈΠΊΠ°Π»ΡΠ½ΠΎ ΠΎΡΠΈΠ΅Π½ΡΠΈΡΠΎΠ²Π°Π½Π½ΡΡ
ΠΊΡΠΈΡΡΠ°Π»Π»ΠΈΡΠΎΠ² ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ°, ΠΎΠ±ΡΠ°Π·ΡΡΡΠΈΡ
ΠΊΠΎΠΌΠΏΠ°ΠΊΡΠ½ΡΡ ΡΠΏΠ»ΠΎΡΠ½ΡΡ ΠΏΠ»Π΅Π½ΠΊΡ. ΠΡΠΎΠ²Π΅Π΄Π΅Π½Ρ ΠΈΠ·ΠΌΠ΅ΡΠ΅Π½ΠΈΡ ΠΎΠΏΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΠΈ ΡΠ»Π΅ΠΊΡΡΠΈΡΠ΅ΡΠΊΠΈΡ
ΡΠ²ΠΎΠΉΡΡΠ²
ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ. ΠΠΎΠΊΠ°Π·Π°Π½ΠΎ, ΡΡΠΎ ΠΏΠ»Π΅Π½ΠΊΠΈ ΠΎΠΊΡΠΈΠ΄Π° ΡΠΈΠ½ΠΊΠ° Π΄Π΅ΠΌΠΎΠ½ΡΡΡΠΈΡΡΡΡ
ΡΠΎΡΠΎΠ»ΡΠΌΠΈΠ½Π΅ΡΡΠ΅Π½ΡΠΈΡ Π² Π²ΠΈΠ΄ΠΈΠΌΠΎΠΌ Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ ΡΠ»Π΅ΠΊΡΡΠΎΠΌΠ°Π³Π½ΠΈΡΠ½ΠΎΠ³ΠΎ ΡΠΏΠ΅ΠΊΡΡΠ° Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ Π½Π°
Π΄Π»ΠΈΠ½Π΅ Π²ΠΎΠ»Π½Ρ 600β700 Π½ΠΌ, ΡΠ²ΡΠ·Π°Π½Π½ΡΡ Ρ Π½Π°Π»ΠΈΡΠΈΠ΅ΠΌ ΡΡΡΡΠΊΡΡΡΠ½ΡΡ
Π΄Π΅ΡΠ΅ΠΊΡΠΎΠ², ΠΈ Π² Π±Π»ΠΈΠΆΠ½Π΅ΠΌ Π£Π€-
Π΄ΠΈΠ°ΠΏΠ°Π·ΠΎΠ½Π΅ Ρ ΠΌΠ°ΠΊΡΠΈΠΌΡΠΌΠΎΠΌ ΠΎΠΊΠΎΠ»ΠΎ 380 Π½ΠΌ, ΡΠ²ΡΠ·Π°Π½Π½ΡΡ Ρ ΠΈΠ·Π»ΡΡΠ°ΡΠ΅Π»ΡΠ½ΠΎΠΉ ΠΌΠ΅ΠΆΠ·ΠΎΠ½Π½ΠΎΠΉ
ΡΠ΅ΠΊΠΎΠΌΠ±ΠΈΠ½Π°ΡΠΈΠ΅ΠΉ. Π£Π΄Π΅Π»ΡΠ½ΠΎΠ΅ ΡΠΎΠΏΡΠΎΡΠΈΠ²Π»Π΅Π½ΠΈΠ΅ ΠΏΠΎΠ»ΡΡΠ΅Π½Π½ΡΡ
ΠΏΠ»Π΅Π½ΠΎΠΊ ΡΠΎΡΡΠ°Π²Π»ΡΠ΅Ρ 0,7 ΠΠΌΒ·ΡΠΌ.Properties and deposition of continuous thin zinc oxide films by chemical on the
monocrystalline silicon substrates with zinc oxide seed layer formed by atomic layer deposition are
studied. Obtained hybrid zinc oxide structures consist of vertically oriented crystallites packed in
uniform continuous film. Optical and electrical properties of the films are measured. It is shown, that
deposited zinc oxide films demonstrate photoluminescence in the visible range of electromagnetic
spectra with maximum at 600β700 nm. Luminescence band in the near UV region at 380 nm, associated
with band-to-band radiative recombination, is also measured. The resistivity of the obtained zinc oxide
films is about 0.7 OhmΒ·cm