98 research outputs found
Nonequilibrium charge dynamics of light-driven rings threaded by a magnetic flux
We study theoretically the charge polarization and the charge current
dynamics of a mesoscopic ring driven by short asymmetric electromagnetic pulses
and threaded by an external static magnetic flux. It is shown that the
pulse-induced charge polarization and the associated light-emission is
controllable by tuning the external magnetic flux. Applying two mutually
perpendicular pulses triggers a charge current in the ring. The interplay
between this nonequilibrium and the persistent currents is investigated and the
conditions under which the pulses stop the persistent current are identified.Comment: 6 pages, 2 figures; submitted to EP
Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides
We apply a multiscale modeling approach to study lattice reconstruction in
marginally twisted bilayers of transition metal dichalcogenides (TMD). For
this, we develop DFT-parametrized interpolation formulae for interlayer
adhesion energies of MoSe, WSe, MoS, and WS, combine those with
elasticity theory, and analyze the bilayer lattice relaxation into mesoscale
domain structures. Paying particular attention to the inversion asymmetry of
TMD monolayers, we show that 3R and 2H stacking domains, separated by a network
of dislocations develop for twist angles and for,
respectively, bilayers with parallel (P) and antiparallel (AP) orientation of
the monolayer unit cells and suggest how the domain structures would manifest
itself in local probe scanning of marginally twisted P- and AP-bilayers
Competing Nematic, Anti-ferromagnetic and Spin-flux orders in the Ground State of Bilayer Graphene
We analyze the phase diagram of the Bilayer graphene (BLG) at zero
temperature and doping. Assuming that at the high energies the electronic
system of BLG can be described within a weak coupling theory (consistent with
the experimental evidence), we systematically study the evolution of the
couplings with going from high to low energies. The divergences of the
couplings at some energies indicates the tendency towards certain symmetry
breakings. Carrying out this program, we found that the phase diagram is
determined by microscopic couplings defined on the short distances (initial
conditions). We explored all plausible space of these initial conditions and
found that the three states have the largest phase volume of the initial
couplings: nematic, antiferromagnetic and spin flux (a.k.a quantum spin Hall).
In addition, ferroelectric and two superconducting phases and appear only near
the very limits of the applicability of the weak coupling approach.
The paper also contains the derivation and analysis of the renormalization
group equations and the group theory classification of all the possible phases
which might arise from the symmetry breakings of the lattice, spin rotation,
and gauge symmetries of graphene.Comment: 19 pages, 16 figure
Spectroscopic Signatures of Electronic Excitations in Raman Scattering in Thin Films of Rhombohedral Graphite
Rhombohedral graphite features peculiar electronic properties, including
persistence of low-energy surface bands of a topological nature. Here, we study
the contribution of electron-hole excitations towards inelastic light
scattering in thin films of rhombohedral graphite. We show that, in contrast to
the featureless electron-hole contribution towards Raman spectrum of graphitic
films with Bernal stacking, the inelastic light scattering accompanied by
electron-hole excitations in crystals with rhombohedral stacking produces
distinct features in the Raman signal which can be used both to identify the
stacking and to determine the number of layers in the film.Comment: 15 pages in preprint format, 4 figures, accepted versio
Anomalously strong pinning of the filling factor nu=2 in epitaxial graphene
We explore the robust quantization of the Hall resistance in epitaxial
graphene grown on Si-terminated SiC. Uniquely to this system, the dominance of
quantum over classical capacitance in the charge transfer between the substrate
and graphene is such that Landau levels (in particular, the one at exactly zero
energy) remain completely filled over an extraordinarily broad range of
magnetic fields. One important implication of this pinning of the filling
factor is that the system can sustain a very high nondissipative current. This
makes epitaxial graphene ideally suited for quantum resistance metrology, and
we have achieved a precision of 3 parts in 10^10 in the Hall resistance
quantization measurements
Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements
which lack inversion symmetry charge transfer between the layers due to
layer-asymmetric interband hybridisation can generate a potential difference
between the layers. We analyse bilayers of transition metal dichalcogenides
(TMDs) - in particular, WSe - for which we find a substantial
stacking-dependent charge transfer, and InSe, for which the charge transfer is
found to be negligibly small. The information obtained about TMDs is then used
to map potentials generated by the interlayer charge transfer across the
moir\'e superlattice in twistronic bilayers.Comment: To appear in Scientific Report
Spin-orbit coupling effect on quantum Hall ferromagnets with vanishing Zeeman energy
We present the phase diagram of a ferromagnetic quantum Hall effect liquid in
a narrow quantum well with vanishing single-particle Zeeman splitting,
and pronounced spin-orbit coupling. Upon decreasing
, the spin-polarization field of a liquid takes, first, the
easy-axis configuration, followed by the formation of a helical state, which
affects the transport and NMR properties of a liquid and the form of
topological defects in it. The analysis is extended over high odd integer
filling factors.Comment: This revised version takes into account easy-axis terms in the energy
and offers a corrected phase diagram of the ferromagnetic QHE liquid.
Analysis is extended over higher filling factor
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