Mycoviruses are common among different species of endophytic fungi of grasses

8 páginas, 1 tabla, 1 figuraA survey of mycoviruses was made in a collection of 103 isolates belonging to 53 different species of endophytic fungi of grasses. DsRNA elements were detected in isolates of 12 of the species analyzed. The banding characteristics and sizes of some of the dsRNA elements suggest that they might belong to previously described mycovirus families. The observed incidence (22.6%) indicates that the presence of mycoviruses could be common among species of this group of ubiquitous fungi.This research was financed by project AGL2005-02839 granted by the Spanish Ministry of Science and Education. We thank Drs. Robert Coutts and Beatríz R. Vázquez de Aldana for reviewing the manuscript.Peer reviewe

BWO based imaging for control of MWCNTs polymer composites homogeneity

Terahertz imaging system based on backward wave oscillator for the defectoscopy of composites in the industry is presented. At a frequency of 874 GHz images of multiwall carbon nanotube agglomerates in a composite are obtained. The possibility of detecting inhomogeneities using level filtering is shown

Optomechanical coupling between AFM cantilever and semiconductor laser

При параллельной ориентации АСМ кантилевера и поверхности излучающего полупроводникового лазера система образует оптомеханический резонатор. В такой системе были исследованы оптомеханическое охлаждение и усиление в зависимости от материала и состава кантилевера, а также внешних условий.When an AFM cantilever oriented parallel to the surface of the emitting semiconductor laser, the system forms an optomechanical resonator. In such a system, optomechanical cooling and amplification were investigated depending on the material and a composition of the cantilever, as well as external conditions.Работа поддержана грантом Президента РФ МК-7001.2016.2

Fermi level pinning on the (110) surface of III-As semiconductors

Методом Кельвин-зонд микроскопии установлено, что на (110) поверхности III-As полупроводников при окислении уровень Ферми закрепляется на расстоянии от уровня вакуума в 4.8 ± 0.1 эВ и 4.9 ± 0.1 эВ для n- и p-типа соответственно.By Kelvin probe force microscopy it was revealed the positions of Fermi level pinning in the surface of III-As semiconductors. The position of pinning is of -4.8 ± 0.1 eV from vacuum level for n-type and is of -4.9 ± 0.1 eV for p-type semiconductors.Работа выполнена при поддержке гранта РФФИ №16-32-60147 мол_а_дк