Theoretical study of the mechanism of dry oxidation of 4H-SiC

Possible defect structures, arising from the interaction of O-2 molecules with an ideal portion of the SiC/SiO2 interface, have been investigated systematically using density functional theory. Based on the calculated total energies and assuming thermal quasiequilibrium during oxidation, the most likely routes leading to complete oxidation have been determined. The defect structures produced along these routes will remain at the interface in significant concentration when stopping the oxidation process. The results obtained for their properties are well supported by experimental findings about the SiC/SiO2 interface. It is found that carbon-carbon bonds can explain most of the observed interface states but not the high density near the conduction band of 4H-SiC

Anisotropy of Resonant Inelastic X-Ray Scattering at the K Edge of Si:Theoretical Analysis

We investigate theoretically the resonant inelastic x-ray scattering (RIXS) at the $K$ edge of Si on the basis of an ab initio calculation. We calculate the RIXS spectra with systematically varying transfered-momenta, incident-photon energy and incident-photon polarization. We confirm the anisotropy of the experimental spectra by Y. Ma {\it et al}. (Phys. Rev. Lett. 74, 478 (1995)), providing a quantitative explanation of the spectra.Comment: 18 pages, 11 figure

Serum Amyloid P Component (SAP)-Like Protein From Botryllid Ascidians Provides a Clue to Amyloid Function

The HA-1 lectin isolated from Botrylloides leachii has an amino acid composition similar to that of mammalian serum amyloid protein (SAP). SAP is a universal component of mammalian amyloid deposits. Like SAP, HA-1 has a disc ultrastructure, and antibody to HA-1 binds both (a) to amyloidlike fibers deposited between rejected Botrylloides colonies and (b) to cerebral amyloid deposits in Alzheimer's disease brains. Deposition of protochordate amyloid within rejection sites and surrounding fouling organisms implies that these fibers function as barriers to allogeneic and infectious challenge. Similarly, mammalian amyloid may also function to contain inflammatory lesions and to limit the spread of certain infections. Pathological amyloidotic conditions in humans, such as Alzheimer's disease, may result from unregulated expression of this primitive encapsulation response

Defects in SiO2 as the possible origin of near interface traps in the SiC∕SiO2 system: A systematic theoretical study

A systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an alpha-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in both SiC/SiO2 and Si/SiO2 systems, and assumed to have their origins in the oxide. It is shown that the vacancies and the oxygen interstitial can be excluded as the origin of such NIT, while the silicon interstitial and carbon dimers give rise to gap levels in the energy range inferred from experiments. The properties of these defects are discussed in light of the knowledge about the SiC/SiO2 interface

Magnetic-Field Sensitive Line Ratios in EUV and Soft X-ray Spectra

We discovered a class of lines that are sensitive to the strength of the ambient magnetic field, and present a measurement of such a line in Ar IX near 49 A. Calculations show that the magnitude of field strengths that can be measured ranges from a few hundred gauss to several tens of kilogauss depending on the particular ion emitting the line

Radiative Correction to the Transferred Polarization in Elastic Electron-Proton Scattering

Model independent radiative correction to the recoil proton polarization for the elastic electron-proton scattering is calculated within method of electron structure functions. The explicit expressions for the recoil proton polarization are represented as a contraction of the electron structure and the hard part of the polarization dependent contribution into cross-section. The calculation of the hard part with first order radiative correction is performed. The obtained representation includes the leading radiative corrections in all orders of perturbation theory and the main part of the second order next-to-leading ones. Numerical calculations illustrate our analytical results.Comment: 14 pages, 4 figure

Prominent 5d-orbital contribution to the conduction electrons in gold

We have examined the valence-band electronic structures of gold and silver in the same column in the periodic table with nominally filled d orbitals by means of a recently developed polarization-dependent hard x-ray photoemission. Contrary to a common expectation, it is found that the 5d-orbital electrons contribute prominently to the conduction electrons in gold while the conduction electrons in silver are to some extent free-electron-like with negligible 4d contribution, which could be related to a well-known fact that gold is more stable than silver in air. The 4d electron correlation effects are found to be essential for the conduction electron character in silver.Comment: 8 pages, 4 figures, to be appeared in New J. Phys

Universal conductance fluctuations in three dimensional metallic single crystals of Si

In this paper we report the measurement of conductance fluctuations in single crystals of Si made metallic by heavy doping (n \approx 2-2.5n_c, n_c being critical composition at Metal-Insulator transition). Since all dimensions (L) of the samples are much larger than the electron phase coherent length L_\phi (L/L_\phi \sim 10^3), our system is truly three dimensional. Temperature and magnetic field dependence of noise strongly indicate the universal conductance fluctuations (UCF) as predominant source of the observed magnitude of noise. Conductance fluctuations within a single phase coherent region of L_\phi^3 was found to be saturated at \approx (e^2/h)^2. An accurate knowledge of the level of disorder, enables us to calculate the change in conductance \delta G_1 due to movement of a single scatterer as \delta G_1 \sim e^2/h, which is \sim 2 orders of magnitude higher than its theoretically expected value in 3D systems.Comment: Text revised version. 4 eps figs unchange