Properties of recent IBAD-MOCVD Coated Conductors relevant to their high field, low temperature magnet use

BaZrO3 (BZO) nanorods are now incorporated into production IBAD-MOCVD coated conductors. Here we compare several examples of both BZO-free and BZO-containing coated conductors using critical current (Ic) characterizations at 4.2 K over their full angular range up to fields of 31 T. We find that BZO nanorods do not produce any c-axis distortion of the critical current density Jc(theta) curve at 4.2 K at any field, but also that pinning is nevertheless strongly enhanced compared to the non-BZO conductors. We also find that the tendency of the ab-plane Jc(theta) peak to become cusp-like is moderated by BZO and we define a new figure of merit that may be helpful for magnet design - the OADI (Off-Axis Double Ic), which clearly shows that BZO broadens the ab-plane peak and thus raises Jc 5-30{\deg} away from the tape plane, where the most critical approach to Ic occurs in many coil designs. We describe some experimental procedures that may make critical current Ic tests of these very high current tapes more tractable at 4.2 K, where Ic exceeds 1000 A even for 4 mm wide tape with only 1 micron thickness of superconductor. A positive conclusion is that BZO is very beneficial for the Jc characteristics at 4.2 K, just as it is at higher temperatures, where the correlated c-axis pinning effects of the nanorods are much more obvious

Theoretical Description of Nearly Discontinuous Transition in Superconductors with Paramagnetic Depairing

Based on a theoretical argument and Monte Carlo simulations of a Ginzburg-Landau model derived microscopically, it is argued that, in type-II superconductors where {\it both} the paramagnetic {\it and} orbital depairings are important, a strong first-order transition (FOT) at $H_{c2}$ expected in the mean field (MF) approximation never occurs in real systems and changes due to the fluctuation into a crossover. The present result explains why a {\it nearly} discontinuous crossover at $H_{c2}$ with {\it no} intrinsic hysteresis is observed only in a clean superconducting material with a singlet pairing and a high condensation energy such as CeCoIn$_5$.Comment: Publication version. See cond-mat/0306060 regarding a corresponding long pape

Flux quanta driven by high-density currents in low-impurity V3Si and LuNi2B2C: free flux flow and flux-core size effect

High density direct currents (DC) are used to drive flux quanta via the Lorentz force towards a highly ordered "free flux flow" (FFF) dynamic state, made possible by the weak-pinning environment of high-quality, single-crystal samples of two low-Tc superconducting compounds, V3Si and LuNi2B2C. We report the effect of the magnetic field-dependent fluxon core size on flux flow resistivity rho_f. Much progress has been made in minimizing the technical challenges associated with the use of high currents. Attainment of a FFF phase is indicated by the saturation at highest currents of flux-flow dissipation levels that are well below the normal state resistance and have field-dependent values. The field dependence of the corresponding rho_f is shown to be consistent with a prediction based on a model for the decrease of flux core size at higher fields in weak-coupling BCS s-wave materials.Comment: More empirical treatment of the magnetoresistive correction of V3Si data by additional measurement and analysis (involving two new coauthors, Favreau and Henderson). End result is the same, making for a stronger manuscrip

Loss of ATM kinase activity leads to embryonic lethality in mice

Ataxia telangiectasia (A-T) mutated (ATM) is a key deoxyribonucleic acid (DNA) damage signaling kinase that regulates DNA repair, cell cycle checkpoints, and apoptosis. The majority of patients with A-T, a cancer-prone neurodegenerative disease, present with null mutations in Atm. To determine whether the functions of ATM are mediated solely by its kinase activity, we generated two mouse models containing single, catalytically inactivating point mutations in Atm. In this paper, we show that, in contrast to Atm-null mice, both D2899A and Q2740P mutations cause early embryonic lethality in mice, without displaying dominant-negative interfering activity. Using conditional deletion, we find that the D2899A mutation in adult mice behaves largely similar to Atm-null cells but shows greater deficiency in homologous recombination (HR) as measured by hypersensitivity to poly (adenosine diphosphate-ribose) polymerase inhibition and increased genomic instability. These results may explain why missense mutations with no detectable kinase activity are rarely found in patients with classical A-T. We propose that ATM kinase-inactive missense mutations, unless otherwise compensated for, interfere with HR during embryogenesis

Flux quanta driven by high-density currents in low-impurity V3Si and LuNi2B2C: Free flux flow and fluxon-core size effect

High-density direct currents are used to drive flux quanta via the Lorentz force toward a highly ordered "free flux flow" (FFF) dynamic state, made possible by the weak-pinning environment of high-quality, single-crystal samples of two low-T-c superconducting compounds, V3Si and LuNi2B2C. We report the effect of the magnetic field-dependent fluxon-core size on flux flow resistivity rho(f). Much progress has been made in minimizing the technical challenges associated with the use of high currents. Attainment of a FFF phase is indicated by the saturation at highest currents of flux flow dissipation levels that are well below the normal-state resistance and have field-dependent values. The field dependence of the corresponding rho(f) is shown to be consistent with a prediction based on a model for the decrease of fluxon-core size at higher fields in weak-coupling BCS s-wave materials.This article is published as Gapud, Albert A., S. Moraes, R. P. Khadka, P. Favreau, C. Henderson, P. C. Canfield, V. G. Kogan et al. "Flux quanta driven by high-density currents in low-impurity V 3 Si and LuNi 2 B 2 C: Free flux flow and fluxon-core size effect." Physical Review B 80, no. 13 (2009): 134524. DOI: 10.1103/PhysRevB.80.134524. Copyright 2009 American Physical Society. Posted with permission