100 research outputs found

    Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy

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    Co islands grown on Cu(111) with a stacking fault at the interface present a conductance in the empty electronic states larger than the Co islands that follow the stacking sequence of the Cu substrate. Electrons can be more easily injected into these faulted interfaces, providing a way to enhance transmission in future spintronic devices. The electronic states associated to the stacking fault are visualized by tunneling spectroscopy and its origin is identified by band structure calculations.Comment: 4 pages, 4 figures; to be published in Phys. Rev. Lett (2000

    Spin configuration in a frustrated ferromagnetic/antiferromagnetic thin film system

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    We have studied the magnetic configuration in ultrathin antiferromagnetic Mn films grown around monoatomic steps on an Fe(001) surface by spin-polarized scanning tunneling microscopy/spectroscopy and ab-initio-parametrized self-consistent real-space tight binding calculations in which the spin quantization axis is independent for each site thus allowing noncollinear magnetism. Mn grown on Fe(001) presents a layered antiferromagnetic structure. In the regions where the Mn films overgrows Fe steps the magnetization of the surface layer is reversed across the steps. Around these defects a frustration of the antiferromagnetic order occurs. Due to the weakened magnetic coupling at the central Mn layers, the amount of frustration is smaller than in Cr and the width of the wall induced by the step does not change with the thickness, at least for coverages up to seven monolayers.Comment: 10 pages, 5 figure

    Periodically rippled graphene: growth and spatially resolved electronic structure

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    We studied the growth of an epitaxial graphene monolayer on Ru(0001). The graphene monolayer covers uniformly the Ru substrate over lateral distances larger than several microns reproducing the structural defects of the Ru substrate. The graphene is rippled with a periodicity dictated by the difference in lattice parameter between C and Ru. The theoretical model predict inhomogeneities in the electronic structure. This is confirmed by measurements in real space by means of scanning tunnelling spectroscopy. We observe electron pockets at the higher parts of the ripples.Comment: 5 page

    Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)

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    It is shown that the surface of an epitaxial graphene monolayer grown on Ru(0001) could be used as a quite efficient external mirror for He-atom microscopy, with a specular reflectivity of 20% of the incident beam. Furthermore, the system is stable up to 1150 K, and the He reflectivity remains almost unchanged after exposure to air. Additionally, the high reflectivity for H2 molecules (11%) opens up the development of a H2 microprobe suitable for lithography. The Debye temperature for this epitaxial graphene monolayer has been determined from a study of the temperature dependence of the He specular intensity as a function of incident parameters. A value of 1045 K has been obtained, which is much higher than the 590 K reported for graphite under similar conditions, and close to the value of 1287 K calculated for isolated grapheneThis work was supported by the Ministerio de Educación y Ciencia through the program CONSOLIDER-INGENIO on Molecular Nanoscience (Project No. CSD 2007-00010), Project No. FIS2010-18847, and a Juan de la Cierva grant (A.P.), and by Comunidad de Madrid through the program NANOBIOMAGNE

    Periodically modulated geometric and electronic structure of graphene on Ru(0001)

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    We report here on a method to fabricate and characterize highly perfect, periodically rippled graphene monolayers and islands, epitaxially grown on single crystal metallic substrates under controlled UHV conditions. The periodicity of the ripples is dictated by the difference in lattice parameters of graphene and substrate, and, thus, it is adjustable. We characterize its perfection at the atomic scale by means of STM and determine its electronic structure in the real space by local tunnelling spectroscopy. There are periodic variations in the geometric and electronic structure of the graphene monolayer. We observe inhomogeneities in the charge distribution, i.e a larger occupied Density Of States at the higher parts of the ripples. Periodically rippled graphene might represent the physical realization of an ordered array of coupled graphene quantum dots. The data show, however, that for rippled graphene on Ru(0001) both the low and the high parts of the ripples are metallic. The fabrication of periodically rippled graphene layers with controllable characteristic length and different bonding interactions with the substrate will allow a systematic experimental test of this fundamental problem.Comment: 12 pages. Contribution to the topical issue on graphene of Semiconductor Science and Technolog

    Electronic and Geometric Corrugation of Periodically Rippled, Self-nanostructured Graphene Epitaxially Grown on Ru(0001)

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    Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which extent the observed "ripples" are structural or electronic in origin have been much disputed recently. A combination of ultrahigh resolution STM images and Helium Atom diffraction data shows that i) the graphene lattice is rotated with respect to the lattice of Ru and ii) the structural corrugation as determined from He diffraction is substantially smaller (0.015 nm) than predicted (0.15 nm) or reported from X-Ray Diffraction or Low Energy Electron Diffraction. The electronic corrugation, on the contrary, is strong enough to invert the contrast between hills and valleys above +2.6 V as new, spatially localized electronic states enter the energy window of the STM. The large electronic corrugation results in a nanostructured periodic landscape of electron and holes pockets.Comment: 16 pages, 6 figure

    Lattice-matched versus lattice-mismatched models to describe epitaxial monolayer graphene on Ru (0001)

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    Monolayer graphene grown on Ru(0001) surfaces forms a superstructure with periodic modulations in its geometry and electronic structure. The large dimension and inhomogeneous features of this superstructure make its description and subsequent analysis a challenge for theoretical modeling based on density functional theory. In this work, we compare two different approaches to describe the same physical properties of this surface, focusing on the geometry and the electronic states confined at the surface. In the more complex approach, the actual moiré structure is taken into account by means of large unit cells, whereas in the simplest one, the graphene moiré is completely neglected by representing the system as a stretched graphene layer that adapts pseudomorphically to Ru(0001). As shown in previous work, the more complex model provides an accurate description of the existing experimental observations. More interestingly, we show that the simplified stretched models, which are computationally inexpensive, reproduce qualitatively the main features of the surface electronic structure. They also provide a simple and comprehensive picture of the observed electronic structure, thus making them particularly useful for the analysis of these and maybe other complex interfacesWe thank Barcelona Supercomputing Center–Spanish Supercomputing Network (BSC-RES) and Centro de Computación Científica – Universidad Autónoma de Madrid (CCC-UAM) for allocation of computer time. Work supported by the MICINN Projects No. FIS2010-15127, No. FIS2010-18847, No. CTQ2010-17006, No. FIS-2010-19609- C09-00, No. ACI2008-0777, No. 2010C-07-25200, and No. CSD2007-00010, the CAM program NANOBIOMAGNET S2009/MAT1726 and the Gobierno Vasco-UPV/EHU Project No. IT-366-07. S.B. acknowledges financial support from MEC under FPU Grant No. AP-2007-00157. D.S. acknowledges financial support from the FPI-UAM grant progra

    Electron localization in epitaxial graphene on Ru(0001) determined by moiré corrugation

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    The interpretation of scanning tunneling spectroscopy (STS) and scanning tunneling microscopy measurements of epitaxial graphene on lattice-mismatched substrates is a challenging problem, because of the spatial modulation in the electronic structure imposed by the formation of a moiré pattern. Here we describe the electronic structure of graphene adsorbed on Ru(0001) by means of density functional theory calculations that include van der Waals interactions and are performed on a large 11×11 unit cell to account for the observed moiré patterns. Our results show the existence of localized electronic states in the high and low areas of the moiré at energies close to and well above the Fermi level, respectively. Localization is due to the spatial modulation of the graphene-Ru(0001) interaction and is at the origin of the various peaks observed in STS spectraWork supported by the MICINN Projects No. FIS2010-15127, No. FIS2010-18847, No. CTQ2010-17006, No. FIS-2010-19609-C09-00, No. ACI2008-0777, No. 2010C-07-25200, and No. CSD2007-00010, the CAM program NANOBIOMAGNET S2009/MAT1726, and the Gobierno Vasco-UPV/EHU Project No. IT-366-07. S.B. acknowledges financial support from MEC under FPU Grant No. AP-2007-0015

    Role of dispersion forces in the structure of graphene monolayers on Ru surfaces

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    Elaborate density functional theory (DFT) calculations that include the effect of van der Waals (vdW) interactions have been carried out for graphene epitaxially grown on Ru(0001). The calculations predict a reduction of structural corrugation in the observed moiré pattern of about 25% (∼0.4  Å) with respect to DFT calculations without vdW corrections. The simulated STM topographies are close to the experimental ones in a wide range of bias voltage around the Fermi levelWe thank Mare Nostrum BSC and CCC-UAM for computer time. Work supported by the MICINN projects FIS2010-15127, FIS2010-18847, CTQ2010-17006, FIS2010-19609-C02-00, ACI2008-0777, 2010C-07- 25200, and CSD2007-00010, the CAM program NANOBIOMAGNET S2009/MAT1726, and the Gobierno Vasco—UPV/EHU project IT-366-0
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