100 research outputs found
Detecting Electronic States at Stacking Faults in Magnetic Thin Films by Tunneling Spectroscopy
Co islands grown on Cu(111) with a stacking fault at the interface present a
conductance in the empty electronic states larger than the Co islands that
follow the stacking sequence of the Cu substrate. Electrons can be more easily
injected into these faulted interfaces, providing a way to enhance transmission
in future spintronic devices. The electronic states associated to the stacking
fault are visualized by tunneling spectroscopy and its origin is identified by
band structure calculations.Comment: 4 pages, 4 figures; to be published in Phys. Rev. Lett (2000
Spin configuration in a frustrated ferromagnetic/antiferromagnetic thin film system
We have studied the magnetic configuration in ultrathin antiferromagnetic Mn
films grown around monoatomic steps on an Fe(001) surface by spin-polarized
scanning tunneling microscopy/spectroscopy and ab-initio-parametrized
self-consistent real-space tight binding calculations in which the spin
quantization axis is independent for each site thus allowing noncollinear
magnetism. Mn grown on Fe(001) presents a layered antiferromagnetic structure.
In the regions where the Mn films overgrows Fe steps the magnetization of the
surface layer is reversed across the steps. Around these defects a frustration
of the antiferromagnetic order occurs. Due to the weakened magnetic coupling at
the central Mn layers, the amount of frustration is smaller than in Cr and the
width of the wall induced by the step does not change with the thickness, at
least for coverages up to seven monolayers.Comment: 10 pages, 5 figure
Periodically rippled graphene: growth and spatially resolved electronic structure
We studied the growth of an epitaxial graphene monolayer on Ru(0001). The
graphene monolayer covers uniformly the Ru substrate over lateral distances
larger than several microns reproducing the structural defects of the Ru
substrate. The graphene is rippled with a periodicity dictated by the
difference in lattice parameter between C and Ru. The theoretical model predict
inhomogeneities in the electronic structure. This is confirmed by measurements
in real space by means of scanning tunnelling spectroscopy. We observe electron
pockets at the higher parts of the ripples.Comment: 5 page
Helium reflectivity and Debye temperature of graphene grown epitaxially on Ru(0001)
It is shown that the surface of an epitaxial graphene monolayer grown on Ru(0001) could be used as a quite efficient external mirror for He-atom microscopy, with a specular reflectivity of 20% of the incident beam. Furthermore, the system is stable up to 1150 K, and the He reflectivity remains almost unchanged after exposure to air. Additionally, the high reflectivity for H2 molecules (11%) opens up the development of a H2 microprobe suitable for lithography. The Debye temperature for this epitaxial graphene monolayer has been determined from a study of the temperature dependence of the He specular intensity as a function of incident parameters. A value of 1045 K has been obtained, which is much higher than the 590 K reported for graphite under similar conditions, and close to the value of 1287 K calculated for isolated grapheneThis work was supported by the Ministerio de Educación y Ciencia through the program CONSOLIDER-INGENIO on Molecular Nanoscience (Project No. CSD 2007-00010), Project No. FIS2010-18847, and a Juan de la Cierva grant (A.P.), and by Comunidad de Madrid through the program NANOBIOMAGNE
Periodically modulated geometric and electronic structure of graphene on Ru(0001)
We report here on a method to fabricate and characterize highly perfect,
periodically rippled graphene monolayers and islands, epitaxially grown on
single crystal metallic substrates under controlled UHV conditions. The
periodicity of the ripples is dictated by the difference in lattice parameters
of graphene and substrate, and, thus, it is adjustable. We characterize its
perfection at the atomic scale by means of STM and determine its electronic
structure in the real space by local tunnelling spectroscopy. There are
periodic variations in the geometric and electronic structure of the graphene
monolayer. We observe inhomogeneities in the charge distribution, i.e a larger
occupied Density Of States at the higher parts of the ripples. Periodically
rippled graphene might represent the physical realization of an ordered array
of coupled graphene quantum dots. The data show, however, that for rippled
graphene on Ru(0001) both the low and the high parts of the ripples are
metallic. The fabrication of periodically rippled graphene layers with
controllable characteristic length and different bonding interactions with the
substrate will allow a systematic experimental test of this fundamental
problem.Comment: 12 pages. Contribution to the topical issue on graphene of
Semiconductor Science and Technolog
Electrical and geometrical tuning of MoS2 field effect transistors: Via direct nanopatterning
Electronic and Geometric Corrugation of Periodically Rippled, Self-nanostructured Graphene Epitaxially Grown on Ru(0001)
Graphene epitaxially grown on Ru(0001) displays a remarkably ordered pattern
of hills and valleys in Scanning Tunneling Microscopy (STM) images. To which
extent the observed "ripples" are structural or electronic in origin have been
much disputed recently. A combination of ultrahigh resolution STM images and
Helium Atom diffraction data shows that i) the graphene lattice is rotated with
respect to the lattice of Ru and ii) the structural corrugation as determined
from He diffraction is substantially smaller (0.015 nm) than predicted (0.15
nm) or reported from X-Ray Diffraction or Low Energy Electron Diffraction. The
electronic corrugation, on the contrary, is strong enough to invert the
contrast between hills and valleys above +2.6 V as new, spatially localized
electronic states enter the energy window of the STM. The large electronic
corrugation results in a nanostructured periodic landscape of electron and
holes pockets.Comment: 16 pages, 6 figure
Lattice-matched versus lattice-mismatched models to describe epitaxial monolayer graphene on Ru (0001)
Monolayer graphene grown on Ru(0001) surfaces forms a superstructure with periodic modulations in its geometry and electronic structure. The large dimension and inhomogeneous features of this superstructure make its description and subsequent analysis a challenge for theoretical modeling based on density functional theory. In this work, we compare two different approaches to describe the same physical properties of this surface, focusing on the geometry and the electronic states confined at the surface. In the more complex approach, the actual moiré structure is taken into account by means of large unit cells, whereas in the simplest one, the graphene moiré is completely neglected by representing the system as a stretched graphene layer that adapts pseudomorphically
to Ru(0001). As shown in previous work, the more complex model provides an accurate description of the existing experimental observations. More interestingly, we show that the simplified stretched models, which are computationally inexpensive, reproduce qualitatively the main features of the surface electronic structure. They also provide a simple and comprehensive picture of the observed electronic structure, thus making them particularly useful for the analysis of these and maybe other complex interfacesWe thank Barcelona Supercomputing Center–Spanish Supercomputing
Network (BSC-RES) and Centro de Computación CientÃfica – Universidad Autónoma de Madrid (CCC-UAM) for allocation of computer time. Work supported by the MICINN Projects No. FIS2010-15127, No.
FIS2010-18847, No. CTQ2010-17006, No. FIS-2010-19609- C09-00, No. ACI2008-0777, No. 2010C-07-25200, and No. CSD2007-00010, the CAM program NANOBIOMAGNET S2009/MAT1726 and the Gobierno Vasco-UPV/EHU Project No. IT-366-07. S.B. acknowledges financial support from MEC under FPU Grant No. AP-2007-00157. D.S. acknowledges financial support from the FPI-UAM grant progra
Electron localization in epitaxial graphene on Ru(0001) determined by moiré corrugation
The interpretation of scanning tunneling spectroscopy (STS) and scanning tunneling microscopy measurements of epitaxial graphene on lattice-mismatched substrates is a challenging problem, because of the spatial modulation in the electronic structure imposed by the formation of a moiré pattern. Here we describe the electronic structure of graphene adsorbed on Ru(0001) by means of density functional theory calculations that include van der Waals interactions and are performed on a large 11×11 unit cell to account for the observed moiré patterns. Our results show the existence of localized electronic states in the high and low areas of the moiré at energies close to and well above the Fermi level, respectively. Localization is due to the spatial modulation of the graphene-Ru(0001) interaction and is at the origin of the various peaks observed in STS spectraWork supported by the MICINN Projects No. FIS2010-15127, No. FIS2010-18847, No. CTQ2010-17006, No. FIS-2010-19609-C09-00, No. ACI2008-0777, No. 2010C-07-25200, and No. CSD2007-00010, the CAM program NANOBIOMAGNET S2009/MAT1726, and the Gobierno Vasco-UPV/EHU Project No. IT-366-07. S.B. acknowledges financial support from MEC under FPU Grant
No. AP-2007-0015
Role of dispersion forces in the structure of graphene monolayers on Ru surfaces
Elaborate density functional theory (DFT) calculations that include the effect of van der Waals (vdW) interactions have been carried out for graphene epitaxially grown on Ru(0001). The calculations predict a reduction of structural corrugation in the observed moiré pattern of about 25% (∼0.4  Å) with respect to DFT calculations without vdW corrections. The simulated STM topographies are close to the experimental ones in a wide range of bias voltage around the Fermi levelWe thank Mare Nostrum BSC and CCC-UAM for computer time. Work supported by the MICINN projects FIS2010-15127, FIS2010-18847, CTQ2010-17006, FIS2010-19609-C02-00, ACI2008-0777, 2010C-07- 25200, and CSD2007-00010, the CAM program NANOBIOMAGNET S2009/MAT1726, and the Gobierno Vasco—UPV/EHU project IT-366-0
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