On the time-dependent transport mechanism between surface traps and the 2DEG in AlGaN/GaN devices

The physical mechanisms involved in the trapping and de-trapping processes associated to surface donor traps in GaN transistors are discussed in this work. The paper challenges the conventional transient techniques adopted for extrapolating the trap energy level via experiments and TCAD simulations. Transient TCAD simulations were employed to reproduce the time-dependent electrical behavior of a Metal-on-Insulator Field-Effect-Transistor (MISFET) and explain the influence of the electric field and energy barrier on the transient time associated to the trapping and de-trapping mechanisms of surface traps. The comparison between three test-structures and the relative variation of the trapping and de-trapping times with the bias and trap parameters leads to the suggestion of a proposed test-structure and bias configuration to accurately extrapolate the energy level of surface traps in GaN transistors

Diamond power devices: state of the art, modelling, figures of merit and future perspective

Abstract: With its remarkable electro-thermal properties such as the highest known thermal conductivity (~22 W cm−1∙K−1 at RT of any material, high hole mobility (>2000 cm2 V−1 s−1), high critical electric field (>10 MV cm−1), and large band gap (5.47 eV), diamond has overwhelming advantages over silicon and other wide bandgap semiconductors (WBGs) for ultra-high-voltage and high-temperature (HT) applications (>3 kV and >450 K, respectively). However, despite their tremendous potential, fabricated devices based on this material have not yet delivered the expected high performance. The main reason behind this is the absence of shallow donor and acceptor species. The second reason is the lack of consistent physical models and design approaches specific to diamond-based devices that could significantly accelerate their development. The third reason is that the best performances of diamond devices are expected only when the highest electric field in reverse bias can be achieved, something that has not been widely obtained yet. In this context, HT operation and unique device structures based on the two-dimensional hole gas (2DHG) formation represent two alternatives that could alleviate the issue of the incomplete ionization of dopant species. Nevertheless, ultra-HT operations and device parallelization could result in severe thermal management issues and affect the overall stability and long-term reliability. In addition, problems connected to the reproducibility and long-term stability of 2DHG-based devices still need to be resolved. This review paper aims at addressing these issues by providing the power device research community with a detailed set of physical models, device designs and challenges associated with all the aspects of the diamond power device value chain, from the definition of figures of merit, the material growth and processing conditions, to packaging solutions and targeted applications. Finally, the paper will conclude with suggestions on how to design power converters with diamond devices and will provide the roadmap of diamond device development for power electronics

Design of a normally-off diamond JFET for high power integrated applications

© 2017 Elsevier B.V. Normally-on (depletion mode) and normally-off (enhancement mode) diamond Junction Field Effect Transistors (JFETs) have been analyzed by means of a commercially available TCAD software. First, the parameters used for describing the incomplete ionization, avalanche, and mobility models in diamond have been discussed and assessed against the state-of-the-art. The on- and off-state electrical characteristics of diamond JFETs have been simulated with the suggested parameter values and matched with a set of available experimental data. Secondly, an optimization technique which can improve the performance of an enhancement mode diamond JFET that operates in the unipolar conduction regime has been proposed. This method takes into account the unique properties and limitations of diamond and highlights the main issues that can arise from the design of a normally-off diamond JFET. In particular, the crucial effect of the high temperature on the performance of the normally-off JFET has been investigated. The adopted technique is mainly based on a design of TCAD experiments and no mathematical algorithms have been developed for the calculation of the optimized set of parameters

Dynamic Provenance for SPARQL Update

While the Semantic Web currently can exhibit provenance information by using the W3C PROV standards, there is a "missing link" in connecting PROV to storing and querying for dynamic changes to RDF graphs using SPARQL. Solving this problem would be required for such clear use-cases as the creation of version control systems for RDF. While some provenance models and annotation techniques for storing and querying provenance data originally developed with databases or workflows in mind transfer readily to RDF and SPARQL, these techniques do not readily adapt to describing changes in dynamic RDF datasets over time. In this paper we explore how to adapt the dynamic copy-paste provenance model of Buneman et al. [2] to RDF datasets that change over time in response to SPARQL updates, how to represent the resulting provenance records themselves as RDF in a manner compatible with W3C PROV, and how the provenance information can be defined by reinterpreting SPARQL updates. The primary contribution of this paper is a semantic framework that enables the semantics of SPARQL Update to be used as the basis for a 'cut-and-paste' provenance model in a principled manner.Comment: Pre-publication version of ISWC 2014 pape

Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge compensating layers featured at the cathode of the device is presented and analyzed. The superjunction or reduced surface effect proves to be very effective in overcoming the inherited ON-state versus breakdown tradeoff appearing in conventional devices, such as the soft punch through plus or field stop plus (FS+) IGBTs. This design enhances the ON-state performance of the FS+IGBT by increasing the plasma concentration at the cathode side without affecting either the switching performance or the breakdown rating

On the impact of substrate electron injection on dynamic Ron in GaN-on-Si HEMTs

The impact of electron injection from the substrate on the dynamic Ron of GaN-on-Si High Electron Mobility Transistors (HEMTs) has been investigated by means of back-bias transient and vertical leakage measurements and TCAD simulations. A strong correlation between electrons injected from the substrate and on-state drain current transients is demonstrated. Moreover, the contribution of the electron-type traps in the buffer layer as opposed to the usually studied hole-like traps to the dynamic Ron is discussed. In particular, the impact of electron-like traps for different levels of substrate leakage current is studied. A TCAD model has been developed and calibrated by taking into account both off-state vertical leakage and on-state drain current transient experimental results. The proposed charge dynamic has also been assessed against state-of-the-art theories. This analysis contributes to a deeper understanding of the complex scenario of different types of traps in the buffer layer of GaN-on-Si devices and highlights the impact that trap-states can have on the on-state and off-state currents

On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices

In this study, an investigation is undertaken to determine the effect of gate design parameters on the on-state characteristics (threshold voltage and gate turn-on voltage) of pGaN/AlGaN/GaN high electron mobility transistors (HEMTs). Design parameters considered are pGaN doping and gate metal work function. The analysis considers the effects of variations on these parameters using a TCAD model matched with experimental results. A better understanding of the underlying physics governing the operation of these devices is achieved with a view to enable better optimization of such gate designs

On the source of oscillatory behaviour during switching of power enhancement mode GaN HEMTs

© 2017 by the author. With Gallium Nitride (GaN) device technology for power electronics applications being ramped up for volume production, an increasing amount of research is now focused on the performance of GaN power devices in circuits. In this study, an enhancement mode GaN high electron mobility transistor (HEMT) is switched in a clamped inductive switching configuration with the aim of investigating the source of oscillatory effects observed. These arise as a result of the increased switching speed capability of GaN devices compared to their silicon counterparts. The study identifies the two major mechanisms (Miller capacitance charge and parasitic common source inductance) that can lead to ringing behaviour during turn-off and considers the effect of temperature on the latter. Furthermore, the experimental results are backed by SPICE modelling to evaluate the contribution of different circuit components to oscillations. The study concludes with good design techniques that can suppress the effects discussed